SKM50GB12V
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 3xI
Cnom
V
CC
= 720 V
V
GE
≤
15 V
V
CES
≤
1200 V
V
GES
t
psc
T
j
Inverse diode
I
F
T
c
= 25 °C
T
c
= 80 °C
T
j
= 125 °C
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
1200
79
60
50
150
-20 ... 20
10
-40 ... 175
65
49
50
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
150
270
-40 ... 175
200
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMITRANS 2
®
SKM50GB12V
Target Data
Features
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
T
j
= 175 °C
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
per IGBT
V
CC
= 600 V
I
C
= 50 A
V
GE
= ±15 V
R
G on
= 13
Ω
R
G off
= 13
Ω
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
4
0.53
5
I
C
= 50 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
V
GE
=V
CE
, I
C
= 2 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
3
0.30
0.295
540
4.0
T
j
= 25 °C
T
j
= 150 °C
6
1.85
2.2
0.94
0.88
18.2
26.4
6.5
0.1
2.3
2.65
1.25
1.22
21.0
28.6
7
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
Conditions
min.
typ.
max.
Unit
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
GB
© by SEMIKRON
Rev. 0 – 23.12.2009
1
SKM50GB12V
Characteristics
Symbol
Conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
r
F
T
j
= 25 °C
T
j
= 150 °C
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
w
terminal-chip
per module
to heat sink M6
to terminals M5
3
2.5
T
C
= 25 °C
T
C
= 125 °C
0.65
1
0.04
0.05
5
5
160
30
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
I
F
= 50 A
T
j
= 150 °C
di/dt
off
= 1380 A/µs T = 150 °C
j
V
GE
= ±15 V
T
j
= 150 °C
V
CC
= 600 V
per diode
min.
typ.
2.2
2.2
1.3
0.9
18.4
25.6
35
8.7
3.6
max.
2.5
2.5
1.5
1.1
20.8
28.0
Unit
V
V
V
V
mΩ
mΩ
A
µC
mJ
Inverse diode
V
F
= V
EC
I
F
= 50 A
V
GE
= 0 V
chip
V
F0
SEMITRANS
®
2
0.84
K/W
SKM50GB12V
Target Data
Features
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
GB
2
Rev. 0 – 23.12.2009
© by SEMIKRON
SKM50GB12V
SEMITRANS 2
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 0 – 23.12.2009
3
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