SKM 300GB125D
Absolute Maximum Ratings
Symbol Conditions
IGBT
Values
Units
SEMITRANS
®
3
Ultra Fast IGBT Module
SKM 300GB125D
Module
Inverse Diode
Features
Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
Typical Applications
GB
1
03-06-2009 NOS
© by SEMIKRON
SKM 300GB125D
Characteristics
Symbol Conditions
Inverse Diode
min.
typ.
max.
Units
SEMITRANS
®
3
Ultra Fast IGBT Module
Module
SKM 300GB125D
Features
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Typical Applications
GB
2
03-06-2009 NOS
© by SEMIKRON
SKM 300GB125D
Z
th
Symbol
Z
th(j-c)l
Conditions
Values
Units
SEMITRANS
®
3
Z
th(j-c)D
Ultra Fast IGBT Module
SKM 300GB125D
Features
Typical Applications
GB
3
03-06-2009 NOS
© by SEMIKRON
SKM 300GB125D
Fig. 1 Typ. output characteristic, t
p
= 80 µs; 125 °C
Fig. 2 Rated current vs. temperature I
C
= f (T
C
)
Fig. 3 Typ. turn-on /-off energy = f (I
C
)
Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 5 Typ. transfer characteristic, t
p
= 80 µs; V
CE
= 20 V
Fig. 6 Typ. gate charge characteristic
4
03-06-2009 NOS
© by SEMIKRON
SKM 300GB125D
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
03-06-2009 NOS
© by SEMIKRON
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