SKM100GB12T4G
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 3xI
Cnom
V
CC
= 800 V
V
GE
≤
15 V
V
CES
≤
1200 V
V
GES
t
psc
T
j
Inverse diode
I
F
SKM100GB12T4G
Conditions
Values
1200
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
154
118
100
300
-20 ... 20
SEMITRANS 3
Fast IGBT4 Modules
®
T
j
= 150 °C
10
-40 ... 175
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
118
89
100
300
486
-40 ... 175
500
-40 ... 125
I
Fnom
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x I
CNOM
• Soft switching 4. Generation CAL
diode (CAL4)
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
AC sinus 50Hz, t = 1 min
4000
Typical Applications
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
I
C
= 100 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
T
j
= 25 °C
T
j
= 150 °C
5
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
5.54
0.41
0.32
560
2.0
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
167
37
16.1
380
78
8.6
0.29
1.85
2.2
0.8
0.7
10.5
15.0
5.8
0.1
2.1
2.4
0.9
0.8
12.0
16.0
6.5
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
Conditions
min.
typ.
max.
Unit
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
V
GE
=V
CE
, I
C
= 3.4 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 600 V
I
C
= 100 A
V
GE
= ±15 V
R
G on
= 1
Ω
R
G off
= 1
Ω
di/dt
on
= 3300 A/µs
di/dt
off
= 1300 A/µs
per IGBT
GB
© by SEMIKRON
Rev. 0 – 19.02.2009
1
SKM100GB12T4G
Characteristics
Symbol
Conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
r
F
T
j
= 25 °C
T
j
= 150 °C
I
RRM
Q
rr
E
rr
R
th(j-c)
SKM100GB12T4G
min.
typ.
2.22
2.18
1.3
0.9
9.2
12.8
47
17
6
max.
2.54
2.5
1.5
1.1
10.4
14.0
Unit
V
V
V
V
mΩ
mΩ
A
µC
mJ
Inverse diode
V
F
= V
EC
I
F
= 100 A
V
GE
= 0 V
chip
V
F0
SEMITRANS
®
3
Fast IGBT4 Modules
I
F
= 100 A
T
j
= 150 °C
di/dt
off
= 1600 A/µs T = 150 °C
j
V
GE
= ±15 V
T
j
= 150 °C
V
CC
= 600 V
per diode
0.49
15
20
K/W
nH
mΩ
mΩ
Module
L
CE
R
CC'+EE'
terminal-chip
per module
to heat sink M6
to terminals M6
3
2.5
T
C
= 25 °C
T
C
= 125 °C
0.25
0.5
0.02
0.038
5
5
325
Features
• IGBT4 = 4. Generation (Trench)IGBT
• VCEsat with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x I
CNOM
• Soft switching 4. Generation CAL
diode (CAL4)
R
th(c-s)
M
s
M
t
w
K/W
Nm
Nm
Nm
g
Typical Applications
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
Remarks
• Case temperature limited to
Tc = 125°C max, recomm.
Top = -40 ... +150°C, product
rel. results valid for Tj = 150°
GB
2
Rev. 0 – 19.02.2009
© by SEMIKRON
SKM100GB12T4G
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 0 – 19.02.2009
3
SKM100GB12T4G
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Transient thermal impedance
Fig. 10: CAL diode forward characteristic
Fig. 11: CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode peak reverse recovery charge
4
Rev. 0 – 19.02.2009
© by SEMIKRON
SKM100GB12T4G
Semitrans 3
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 0 – 19.02.2009
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
