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MKP1V120 Series
Preferred Device
Sidac High Voltage
Bidirectional Triggers
Bidirectional devices designed for direct interface with the ac power
line. Upon reaching the breakover voltage in each direction, the device
switches from a blocking state to a low voltage on−state. Conduction
will continue like a Triac until the main terminal current drops below
the holding current. The plastic axial lead package provides high pulse
current capability at low cost. Glass passivation insures reliable
operation.
Features
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SIDACS( )
0.9 AMPERES RMS
120 − 240 VOLTS
•
•
•
•
•
•
•
•
High Pressure Sodium Vapor Lighting
Strobes and Flashers
Ignitors
High Voltage Regulators
Pulse Generators
Used to Trigger Gates of SCR’s and Triacs
Indicates UL Registered — File #E116110
These are Pb−Free Devices*
MT1
MT2
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
V
"90
"180
"0.9
"4.0
−40 to +125
−40 to +150
A
A
Peak Repetitive Off−State Voltage
V
DRM
,
(Sine Wave, 50 to 60 Hz, T
J
= − 40 to 125°C) V
RRM
MKP1V120, MKP1V130, MKP1V160
MKP1V240
On-State Current RMS (T
L
= 80°C,
Lead Length = 3/8″, All Conduction Angles)
Peak Non−repetitive Surge Current
(60 Hz One Cycle Sine Wave, T
J
= 125°C)
Operating Junction Temperature Range
Storage Temperature Range
I
T(RMS)
I
TSM
T
J
T
stg
AXIAL LEAD
CASE 59
STYLE 2
MARKING DIAGRAM
°C
°C
A
MKP
1Vxx0
YYWW
G
G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead
Lead Length = 3/8″
Lead Solder Temperature
(Lead Length
w
1/16″ from Case, 10 s Max)
Symbol
R
qJL
T
L
Max
40
260
Unit
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
A
= Assembly Location
MKP1Vxx0 = Device Number
x= 12, 13, 16 or 24
YY
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
October, 2006 − Rev. 10
Publication Order Number:
MKP1V120/D
MKP1V120 Series
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
OFF CHARACTERISTICS
Repetitive Peak Off−State Current T
J
= 25°C
(50 to 60 Hz Sine Wave)
V
DRM
= 90 V, MKP1V120, MKP1V130 and MKP1V160
V
DRM
= 180 V, MKP1V240
ON CHARACTERISTICS
Breakover Voltage
I
BO
= 35
mA
MKP1V120
35
mA
MKP1V130
200
mA
MKP1V160
35
mA
MKP1V240
Peak On−State Voltage
(I
TM
= 1 A Peak, Pulse Width
≤
300
ms,
Duty Cycle
≤
2%)
Dynamic Holding Current
(Sine Wave, 50 to 60 Hz, R
L
= 100 Ohm)
Switching Resistance
(Sine Wave, 50 to 60 Hz)
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of On−State Current,
Critical Damped Waveform Circuit
(I
PK
= 130 Amps, Pulse Width = 10
msec)
di/dt
−
120
−
A/ms
V
BO
110
120
150
220
V
TM
I
H
R
S
−
−
0.1
−
−
−
−
1.3
−
−
130
140
170
250
1.5
100
−
V
mA
kW
V
I
DRM
−
−
5.0
mA
Symbol
Min
Typ
Max
Unit
ORDERING INFORMATION
Device
MKP1V120RL
MKP1V120RLG
MKP1V130RL
MKP1V130RLG
MKP1V160
MKP1V160G
MKP1V160RL
MKP1V160RLG
MKP1V240
MKP1V240G
MKP1V240RL
MKP1V240RLG
Package*
DO−41, Axial Lead
DO−41, Axial Lead
DO−41, Axial Lead
DO−41, Axial Lead
DO−41, Axial Lead
DO−41, Axial Lead
DO−41, Axial Lead
DO−41, Axial Lead
DO−41, Axial Lead
DO−41, Axial Lead
DO−41, Axial Lead
DO−41, Axial Lead
Shipping
†
5000 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
5000 / Tape & Reel
1000 Units / Bulk
1000 Units / Bulk
5000 / Tape & Reel
5000 / Tape & Reel
1000 Units / Bulk
1000 Units / Bulk
5000 / Tape & Reel
5000 / Tape & Reel
*This package is inherently Pb−Free.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2
MKP1V120 Series
Voltage Current Characteristic of SIDAC
(Bidirectional Device)
+ Current
I
TM
I
H
I
S
I
DRM
V
S
I
(BO)
+ Voltage
V
(BO)
V
TM
Slope = R
S
Symbol
I
DRM
V
DRM
V
BO
I
BO
I
H
V
TM
I
TM
Parameter
Off State Leakage Current
Off State Repetitive Blocking Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
Peak on State Current
V
DRM
R
S
+
(V
(BO)
– V
S
)
(I
S
– I
(BO)
)
TL , MAXIMUM ALLOWABLE LEAD TEMPERATURE (
°
C)
140
IT(RMS) , ON−STATE CURRENT (AMPS)
130
120
110
100
90
80
70
60
50
40
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
T
J
= 125°C
Sine Wave
Conduction Angle = 180°C
T
L
3
/
″
8
3
/
″
8
1.0
T
J
= 125°C
Sine Wave
Conduction Angle = 180°C
Assembled in PCB
Lead Length =
3
/
8
″
0.8
0.6
0.4
0.2
0
20
40
60
80
100
120
140
I
T(RMS)
, ON−STATE CURRENT (AMPS)
T
A
, MAXIMUM AMBIENT TEMPERATURE (°C)
Figure 1. Maximum Lead Temperature
Figure 2. Maximum Ambient Temperature
I T , INSTANTANEOUS ON−STATE CURRENT (AMPS)
PRMS , POWER DISSIPATION (WATTS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0
1.0
2.0
3.0
4.0
5.0
T
J
= 25°C
125°C
1.25
T
J
= 25°C
Conduction Angle = 180°C
1.00
0.75
0.50
0.25
0
0.2
0.4
0.6
0.8
1.0
V
T
, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
I
T(RMS)
, ON−STATE CURRENT (AMPS)
Figure 3. Typical On−State Voltage
Figure 4. Typical Power Dissipation
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3
MKP1V120 Series
THERMAL CHARACTERISTICS
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.5
1.0
2.0
Z
qJL
(t) = R
qJL
•
r(t)
DT
JL
= P
pk
R
qJL
[r(t)]
t
p
TIME
where:
DT
JL
= the increase in junction temperature above the
lead temperature
r(t) = normalized value of transient thermal resistance at
time, t from this figure. For example,
r(t
p
) = normalized value of transient resistance at time t
p
.
5.0
10
20
t, TIME (ms)
50
100
200
The temperature of the lead should be
measured using a thermocouple placed on the
lead as close as possible to the tie point. The
thermal mass connected to the tie point is
normally large enough so that it will not
significantly respond to heat surges generated
in the diode as a result of pulsed operation
once steady−state conditions are achieved.
Using the measured value of T
L
, the junction
temperature may be determined by:
T
J
= T
L
+
DT
JL
500
1.0 k
2.0 k
5.0 k
10 k
Figure 5. Thermal Response
VBO , BREAKOVER VOLTAGE (NORMALIZED)
1.4
IH , HOLDING CURRENT (NORMALIZED)
1.0
1.2
1.0
0.9
0.8
0.6
0.4
−60
0.8
−60
−40
−20
0
20
40
60
80
100
120
140
−40
−20
0
20
40
60
80
100
120
140
T
J
, JUNCTION TEMPERATURE (°C)
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Breakover Voltage
Figure 7. Typical Holding Current
100
IPK, PEAK CURRENT (AMPS)
10
I
PK
10%
tw
1.0
0.1
1.0
t
w
, PULSE WIDTH (ms)
10
100
Figure 8. Pulse Rating Curve
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4
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