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MASMCJ75CATR

产品描述1500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC, SMCJ, 2 PIN
产品类别分立半导体    二极管   
文件大小187KB,共4页
制造商Microsemi
官网地址https://www.microsemi.com
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MASMCJ75CATR概述

1500W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB, PLASTIC, SMCJ, 2 PIN

MASMCJ75CATR规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Microsemi
零件包装代码DO-214AB
包装说明R-PDSO-J2
针数2
Reach Compliance Codeunknown
其他特性HIGH RELIABILITY
最大击穿电压92.1 V
最小击穿电压83.3 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AB
JESD-30 代码R-PDSO-J2
JESD-609代码e0
湿度敏感等级1
最大非重复峰值反向功率耗散1500 W
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-65 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性BIDIRECTIONAL
最大功率耗散1.56 W
认证状态Not Qualified
参考标准MIL-19500
最大重复峰值反向电压75 V
表面贴装YES
技术AVALANCHE
端子面层TIN LEAD
端子形式J BEND
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED

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TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
SURFACE MOUNT 1500 Watt
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional (A) and Bidirectional (CA) construction
- Available in both J-bend and Gull-wing terminations
- Selections for 5.0 to 170 V standoff voltages (V
WM
)
LEVELS
M, MA, MX, MXL
DEVICES
MSMCJ5.0A thru MSMCJ170CA, e3
and MSMCG5.0A thru MSMCG170CA, e3
FEATURES
High reliability controlled devices with fabrication and assembly lot traceability
100 % surge tested devices
Optional upscreening available by replacing the M prefix with MA, MX or MXL prefixes.
These prefixes specify various screening and conformance inspection options based on
MIL-PRF-19500. Refer to
MicroNote 129
for more details on the screening options.
Axial-lead equivalent packages for thru-hole mounting available as 1.5KE6.8A to
1.5KE200CA or 1N6267 thru 1N6303A and 1N5908 (consult factory for other surface mount
options).
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices available by adding an “e3” suffix
3σ lot norm screening performed on Standby Current I
D
Refer to table below
for dimensions
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightening protection per IEC 61000-4-5 with 42 Ohms source impedance:
o
Class 1: MSMC5.0A to MSMC170CA
o
Class 2: MSMC5.0A to MSMC150CA
o
Class 3: MSMC5.0A to MSMC75CA
o
Class 4: MSMC5.0A to MSMC36CA
Secondary lightening protection per IEC 61000-4-5 with 12 Ohms source impedance:
o
Class 1: MSMC5.0A to MSMC90CA
o
Class 2: MSMC5.0A to MSMC45CA
o
Class 3: MSMC5.0A to MSMC24CA
o
Class 4: MSMC5.0A to MSMC11CA
Secondary lightening protection per IEC 61000-4-5 with 2 Ohms source impedance:
o
Class 2: MSMC5.0A to MSMC22CA
o
Class 3: MSMC5.0A to MSMC10CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 ºC: 1500 watts at 10/1000
μs
(also see Figures 1,2, and
3) with impulse repetition rate (duty factor) of 0.01 % or less
t
clamping
(0 volts to V
BR
min.): < 100 ps theoretical for unidirectional and <5 ns for bidirectional
Operating and Storage temperature: -65 ºC to +150 ºC
Thermal resistance: 20 ºC/W junction to lead, or 80 ºC/W junction to ambient when mounted
on FR4 PC board (1oz Cu) with recommended footprint (see page 2)
Steady-State Power dissipation: 6 watts at TL = 30 ºC, or 1.56 watts at TA = 25 ºC when
mounted on FR4 PC board with recommended footprint (see page 2)
Forward Surge: 200 Amps peak impulse of 8.3 ms half-sine wave at 25 ºC (unidirectional
only)
Solder temperatures: 260 ºC for 10 s (maximum)
RF01001 Rev B, Sept 2011
High Reliability Product Group
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