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MB84VD21182DA-85PBS: 产品描述Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, PLASTIC, BGA-69; 产品类别存储存储; 文件大小206KB，共60页; 制造商FUJITSU(富士通); 官网地址http://edevice.fujitsu.com/fmd/en/index.html

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MB84VD21182DA-85PBS概述

Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, PLASTIC, BGA-69

MB84VD21182DA-85PBS规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	FUJITSU(富士通)
零件包装代码	BGA
包装说明	LFBGA, BGA69,10X10,32
针数	69
Reach Compliance Code	compliant
最长访问时间	85 ns
其他特性	SRAM IS CONFIGURED AS 256K X 16/512K X 8
JESD-30 代码	R-PBGA-B69
JESD-609代码	e0
长度	11 mm
内存密度	16777216 bit
内存集成电路类型	MEMORY CIRCUIT
内存宽度	16
混合内存类型	FLASH+SRAM
功能数量	1
端子数量	69
字数	1048576 words
字数代码	1000000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-25 °C
组织	1MX16
封装主体材料	PLASTIC/EPOXY
封装代码	LFBGA
封装等效代码	BGA69,10X10,32
封装形状	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度（摄氏度）	NOT SPECIFIED
电源	3 V
认证状态	Not Qualified
座面最大高度	1.4 mm
最大压摆率	0.05 mA
最大供电电压 (Vsup)	3.3 V
最小供电电压 (Vsup)	2.7 V
标称供电电压 (Vsup)	3 V
表面贴装	YES
技术	CMOS
温度等级	OTHER
端子面层	Tin/Lead (Sn/Pb)
端子形式	BALL
端子节距	0.8 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
宽度	8 mm

MB84VD21182DA-85PBS相似产品对比

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描述	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, PLASTIC, BGA-69	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, PLASTIC, BGA-69	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, PLASTIC, BGA-69	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, PLASTIC, BGA-69	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, PLASTIC, BGA-69	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, PLASTIC, BGA-69	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, PLASTIC, BGA-69	Memory Circuit, Flash+SRAM, 1MX16, CMOS, PBGA69, PLASTIC, BGA-69
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
零件包装代码	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
包装说明	LFBGA, BGA69,10X10,32	LFBGA, BGA69,10X10,32	LFBGA, BGA69,10X10,32	LFBGA, BGA69,10X10,32	LFBGA, BGA69,10X10,32	LFBGA, BGA69,10X10,32	LFBGA, BGA69,10X10,32	LFBGA, BGA69,10X10,32
针数	69	69	69	69	69	69	69	69
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
最长访问时间	85 ns	85 ns	85 ns	85 ns	85 ns	85 ns	85 ns	85 ns
其他特性	SRAM IS CONFIGURED AS 256K X 16/512K X 8	SRAM IS CONFIGURED AS 256K X 16/512K X 8	SRAM IS CONFIGURED AS 256K X 16/512K X 8	SRAM IS CONFIGURED AS 256K X 16/512K X 8	SRAM IS CONFIGURED AS 256K X 16/512K X 8	SRAM IS CONFIGURED AS 256K X 16/512K X 8	SRAM IS CONFIGURED AS 256K X 16/512K X 8	SRAM IS CONFIGURED AS 256K X 16/512K X 8
JESD-30 代码	R-PBGA-B69	R-PBGA-B69	R-PBGA-B69	R-PBGA-B69	R-PBGA-B69	R-PBGA-B69	R-PBGA-B69	R-PBGA-B69
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0
长度	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm	11 mm
内存密度	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit	16777216 bit
内存集成电路类型	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT
内存宽度	16	16	16	16	16	16	16	16
混合内存类型	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM	FLASH+SRAM
功能数量	1	1	1	1	1	1	1	1
端子数量	69	69	69	69	69	69	69	69
字数	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words	1048576 words
字数代码	1000000	1000000	1000000	1000000	1000000	1000000	1000000	1000000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C	-25 °C
组织	1MX16	1MX16	1MX16	1MX16	1MX16	1MX16	1MX16	1MX16
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA
封装等效代码	BGA69,10X10,32	BGA69,10X10,32	BGA69,10X10,32	BGA69,10X10,32	BGA69,10X10,32	BGA69,10X10,32	BGA69,10X10,32	BGA69,10X10,32
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
电源	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm	1.4 mm
最大压摆率	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA	0.05 mA
最大供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
最小供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
标称供电电压 (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
宽度	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm	8 mm
厂商名称	FUJITSU(富士通)	-	FUJITSU(富士通)	FUJITSU(富士通)	FUJITSU(富士通)	FUJITSU(富士通)	FUJITSU(富士通)	FUJITSU(富士通)

MB84VD21182DA-85PBS

MB84VD21182DA-85PBS概述

MB84VD21182DA-85PBS规格参数

MB84VD21182DA-85PBS相似产品对比

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