Ordering number : EN7519A
50C02SS
SANYO Semiconductors
DATA SHEET
50C02SS
Applications
•
NPN Epitaxial Planar Silicon Transistor
Low-Frequency
General-Purpose Amplifier Applications
Low-frequency Amplifer, high-speed switching small motor drive, muting circuit
Features
•
•
•
•
Large current capacity
Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=175m
Ω
[IC=0.5A, IB=50mA]
Ultrasmall package facilitates miniaturization in end products
Small ON-resistance (Ron)
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Mounted on a glass-epoxy board (20×30×1.6mm)
Conditions
Ratings
60
50
5
400
800
200
150
--55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Package Dimensions
unit : mm (typ)
7029A-002
1.4
0.3
0.25
3
0 to 0.02
0.1
Product & Package Information
• Package
: SSFP
• JEITA, JEDEC
: SC-81
• Minimum Packing Quantity : 8,000 pcs./reel
50C02SS-TL-E
Packing Type: TL
Marking
1.4
0.8
LOT No.
LOT No.
0.3
1
2
YN
0.45
0.6
0.2
TL
Electrical Connection
1
2
0.07
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
3
1
0.07
3
2
http://semicon.sanyo.com/en/network
71812 TKIM/52703 TSIM TA-100152 No.7519-1/7
50C02SS
Electrical Characteristics
at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=40V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=10mA
VCE=10V, IC=50mA
VCB=10V, f=1MHz
IC=100mA, IB=10mA
IC=100mA, IB=10mA
IC=10μA, IE=0A
IC=1mA, RBE=∞
IE=10μA, IC=0A
See specified Test Circuit.
60
50
5
30
340
55
300
500
2.8
50
0.9
100
1.2
Conditions
Ratings
min
typ
max
100
100
800
MHz
pF
mV
V
V
V
V
ns
ns
ns
Unit
nA
nA
Switching Time Test Circuit
PW=20μs
D.C.≤1%
INPUT
IB1
OUTPUT
IB2
VR
50Ω
+
220μF
VBE= --5V
+
470μF
VCC=25V
RB
RL
IC=20IB1= --20IB2=200mA
Ordering Information
Device
50C02SS-TL-E
Package
SSFP
Shipping
8,000pcs./reel
memo
Pb Free
No.7519-2/7
50C02SS
500
IC -- VCE
A 1
5mA
600
IC -- VBE
VCE=2V
450
7mA
Collector Current, IC -- mA
30mA
350
300
250
200
150
100
50
0
0
3mA
Collector Current, IC -- mA
20m
400
A
10m
8mA
5mA
500
400
2mA
1mA
600μA
300
200
200μA
100
IB=0
100
200
300
400
500
600
700
800
900
1000
0
0
0.2
0.4
0.6
0.8
1.0
1.2
IT05107
Collector-to-Emitter Voltage, VCE -- mV
1000
7
5
3
2
IT05106
3
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
VCE(sat) -- IC
Ta=75
°
C
25
°
C
--25
°
C
Ta=7
5
°
C
25
°
C
--25
°
C
VCE=2V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2
IC / IB=10
DC Current Gain, hFE
100
100
7
5
3
2
2
10
7
10
1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05108
5
1.0
2
3
5 7 10
2
3
--2
5
°
C
5 7 100
3
25
°
C
Ta
=
2
5
75
°
C
7
3
5 7 1000
IT05411
Collector Current, IC -- mA
3
VCE(sat) -- IC
Collector Current, IC -- mA
1000
7
VCE(sat) -- IC
IC / IB=20
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
IC / IB=50
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2
5
3
2
100
Ta
=
7
5
75
°
C
2
3
2
C
5
°
100
7
5
3
2
°
C
25
°
C
75
=
°
C
Ta
25
--
--2
5
°
C
10
1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05109
10
1.0
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05110
Collector Current, IC -- mA
10
7
VBE(sat) -- IC
Collector Current, IC -- mA
10
Cob -- VCB
f=1MHz
IC / IB=20
Output Capacitance, Cob -- pF
2
3
5 7 1000
IT05111
7
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
5
3
2
5
1.0
7
5
3
2
25
°
C
Ta= --25
°
C
3
75
°
C
2
0.1
1.0
2
3
5 7 10
2
3
5 7 100
1.0
1.0
2
3
5
7
10
2
3
5
7
100
Collector Current, IC -- mA
Collector-to-Base Voltage, VCB -- V
IT05112
No.7519-3/7
50C02SS
1000
fT -- IC
VCE=10V
Gain-Bandwidth Product, fT -- MHz
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
Ron -- IB
f=1MHz
1kΩ
IN
1kΩ
IB
OUT
7
5
3
2
100
1.0
ON Resistance, Ron --
Ω
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05113
0.1
0.1
2
3
5
7
1.0
2
3
5
Collector Current, IC -- mA
250
PC -- Ta
Base Current, IB -- mA
10
IT06092
7
Collector Dissipation, PC -- mW
200
M
ou
nt
ed
150
on
ag
las
s-e
po
100
xy
bo
ar
d(
20
✕
3
50
0
✕
1
.6m
m
)
160
0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta --
°C
IT05114
No.7519-4/7
50C02SS
Embossed Taping Specification
50C02SS-TL-E
No.7519-5/7
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