NPN Silicon RF Transistors
BF 840
BF 841
q
Suitable for common emitter RF, IF amplifiers
q
Low collector-base
capacitance due to contact shield diffusion
q
Low output conductance
Type
BF 840
BF 841
Marking
NC
ND
Ordering Code
Q62702-F1240
Q62702-F1287
Pin Configuration
1
2
3
B
E
C
Package
1)
SOT-23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation,
T
A
≤
25 ˚C
2)
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
R
th JA
≤
450
Symbol
V
CE0
V
CB0
V
EB0
I
C
I
B
P
tot
T
j
T
stg
Values
40
40
4
25
2
280
150
– 65 … + 150
Unit
V
mA
mW
˚C
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm
×
16.7 mm
×
0.7 mm.
Semiconductor Group
1
07.94
BF 840
BF 841
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Emitter-base breakdown voltage
I
E
= 10
µ
A,
I
B
= 0
Collector-base cutoff current
V
CB
= 20 V,
I
E
= 0
DC current gain,
I
C
= 1 mA,
V
CE
= 10 V
BF 840
BF 841
Base-emitter voltage
I
C
= 1 mA,
V
CE
= 10 V
AC Characteristics
Transition frequency
I
C
= 1 mA,
V
CE
= 10 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
V
BE
=
v
be
= 0,
f
= 1 MHz
Noise figure
I
C
= 1 mA,
V
CE
= 10 V,
f
= 100 kHz
R
S
= 200
Ω
Output conductance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 0.5 MHz
f
T
C
cb
F
–
–
–
380
0.3
1.7
–
–
–
MHz
pF
dB
V
(BR) CE0
V
(BR) EB0
I
CB0
h
FE
65
35
V
BE
–
–
–
0.7
220
125
–
V
40
4
–
–
–
–
–
–
100
nA
–
V
Values
typ.
max.
Unit
g
22e
–
4
–
µ
S
Semiconductor Group
2
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