BZX84-V-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
3
1
2
20421
• These diodes are also available in other case
styles and other configurations including: the
SOD-123 case with type designation BZT52
series, the zener diode common anode
configuration in the SOT-23 case with type
designation AZ23 series and the zener diode
common cathode configuration in the SOT-23 case with
type designation DZ23 series
• The Zener voltages are graded according to the
international E 24 standard. Standard zener voltage
tolerance is ± 5 %. Replace “C” with “B” for 2 % tolerance.
• Silicon planar power Zener diodes
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
PRIMARY CHARACTERISTICS
PARAMETER
V
Z
range nom.
Test current I
ZT
V
Z
specification
Int. construction
VALUE
2.4 to 75
2; 5
Pulse current
Single
UNIT
V
mA
ORDERING INFORMATION
DEVICE NAME
BZX84-V-series
BZX84-V-series
ORDERING CODE
BZX84-V-series-GS18
BZX84-V-series-GS08
TAPED UNITS PER REEL
10 000 (8 mm tape on 13" reel)
3000 (8 mm tape on 7" reel)
MINIMUM ORDER QUANTITY
10 000
15 000
PACKAGE
PACKAGE NAME
SOT-23
WEIGHT
8.8 mg
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Power dissipation
TEST CONDITION
T
amb
= 25 °C,
device on fiberglass substrate,
acc. layout on page 7
T
amb
= 25 °C,
device on fiberglass substrate,
acc. layout on page 7
SYMBOL
P
tot
VALUE
300
UNIT
mW
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
R
thJA
T
j
T
stg
420
150
- 65 to + 150
K/W
°C
°C
Rev. 1.9, 08-Dec-11
Document Number: 85763
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZX84-V-Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
PART
NUMBER
MARKING
CODE
MIN.
BZX84C2V4-V
BZX84C2V7-V
BZX84C3V0-V
BZX84C3V3-V
BZX84C3V6-V
BZX84C3V9-V
BZX84C4V3-V
BZX84C4V7-V
BZX84C5V1-V
BZX84C5V6-V
BZX84C6V2-V
BZX84C6V8-V
BZX84C7V5-V
BZX84C8V2-V
BZX84C9V1-V
BZX84C10-V
BZX84C11-V
BZX84C12-V
BZX84C13-V
BZX84C15-V
BZX84C16-V
BZX84C18-V
BZX84C20-V
BZX84C22-V
BZX84C24-V
BZX84C27-V
BZX84C30-V
BZX84C33-V
BZX84C36-V
BZX84C39-V
BZX84C43-V
BZX84C47-V
BZX84C51-V
BZX84C56-V
BZX84C62-V
BZX84C68-V
BZX84C75-V
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Y1
Y2
Y3
Y4
Y5
Y6
Y7
Y8
Y9
Y10
Y11
Y12
Y13
Y14
Y15
Y16
Y17
Y18
Y19
Y20
Y21
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
28
31
34
37
40
44
48
52
58
64
70
V
Z
at I
ZT1
V
NOM.
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
MAX.
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32
35
38
41
46
50
54
60
66
72
79
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14.0
15.4
16.8
18.9
21.0
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
TEST CURRENT
I
ZT1
mA
I
ZT2
REVERSE
LEAKAGE
CURRENT
I
R
at V
R
μA
V
MAX.
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
180
200
215
240
255
DYNAMIC
RESISTANCE
f = 1 kHz
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
MAX.
275
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
375
400
425
450
475
500
-9
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
9
9
10
10
TEMPERATURE
COEFFICIENT
VZ
at I
ZT1
10
-4
/°C
MIN.
MAX.
-4
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
11
12
12
12
Rev. 1.9, 08-Dec-11
Document Number: 85763
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZX84-V-Series
www.vishay.com
Vishay Semiconductors
REVERSE
LEAKAGE
CURRENT
I
R
at V
R
μA
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
50
20
10
5
5
3
3
3
2
1
3
2
1
0.7
0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
V
MAX.
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
1
1
1
1
1
1
1
2
2
2
4
4
5
5
6
7
8
8
8
10.5
11.2
12.6
14
15.4
16.8
18.9
21
23.1
25.2
27.3
30.1
32.9
35.7
39.2
43.4
47.6
52.5
100
100
95
95
90
90
90
80
60
40
10
15
15
15
15
20
20
25
30
30
40
45
55
55
70
80
80
80
90
130
150
170
180
200
215
240
255
DYNAMIC
RESISTANCE
f = 1 kHz
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
MAX.
275
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
300
300
325
350
350
375
375
400
425
450
475
500
-9
-9
-9
-8
-8
-7
-6
-5
-3
-2
-1
2
3
4
5
5
5
6
7
7
8
8
8
8
8
8
8
8
8
10
10
10
10
9
9
10
10
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
PART
NUMBER
MARKING
CODE
MIN.
BZX84B2V4-V
BZX84B2V7-V
BZX84B3V0-V
BZX84B3V3-V
BZX84B3V6-V
BZX84B3V9-V
BZX84B4V3-V
BZX84B4V7-V
BZX84B5V1-V
BZX84B5V6-V
BZX84B6V2-V
BZX84B6V8-V
BZX84B7V5-V
BZX84B8V2-V
BZX84B9V1-V
BZX84B10-V
BZX84B11-V
BZX84B12-V
BZX84B13-V
BZX84B15-V
BZX84B16-V
BZX84B18-V
BZX84B20-V
BZX84B22-V
BZX84B24-V
BZX84B27-V
BZX84B30-V
BZX84B33-V
BZX84B36-V
BZX84B39-V
BZX84B43-V
BZX84B47-V
BZX84B51-V
BZX84B56-V
BZX84B62-V
BZX84B68-V
BZX84B75-V
Z50
Z51
Z52
Z53
Z54
Z55
Z56
Z57
Z58
Z59
Z60
Z61
Z62
Z63
Z64
Z65
Z66
Z67
Z68
Z69
Z70
Z71
Z72
Z73
Z74
Z75
Z76
Z77
Z78
Z79
Z80
Z81
Z82
Z83
Z84
Z85
Z86
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.0
5.49
6.08
6.66
7.35
8.04
8.92
9.8
10.8
11.8
12.7
14.7
15.7
17.6
19.6
21.6
23.5
26.5
29.4
32.3
35.3
38.2
42.1
46.1
50
54.9
60.8
66.6
73.5
V
Z
at I
ZT1
V
NOM.
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
MAX.
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.2
5.71
6.32
6.94
7.65
8.36
9.28
10.2
11.2
12.2
13.3
15.3
16.3
18.4
20.4
22.4
24.5
27.5
30.6
33.7
36.7
39.8
43.9
47.9
52
57.1
63.2
69.4
76.5
TEST CURRENT
I
ZT1
mA
I
ZT2
TEMPERATURE
COEFFICIENT
VZ
at I
ZT1
10
-4
/°C
MIN.
MAX.
-4
-4
-3
-3
-3
-3
-1
2
4
6
7
7
7
7
8
8
9
9
9
9
9.5
9.5
10
10
10
10
10
10
10
12
12
12
12
11
12
12
12
Rev. 1.9, 08-Dec-11
Document Number: 85763
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZX84-V-Series
www.vishay.com
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
mA
10
3
10
2
Ω
100
T
J
= 25 °C
5
4
Vishay Semiconductors
I
F
10
1
10
-1
10
-2
10
-3
10
-4
T
J
= 100 °C
r
zj
3
2
33
27
22
18
15
12
10
6.8/8.2
6.2
T
J
= 25 °C
10
5
4
3
2
10
-5
0
18114
1
0.2
0.4
0.6
0.8
1V
0.1
18119
2
5
1
2
5
V
F
10
I
Z
2
5
100 mA
Fig. 1 - Forward Characteristics
Fig. 4 - Dynamic Resistance vs. Zener Current
mW
500
Ω
10
3
7
5
4
T
j
= 25 °C
400
R
zj
3
2
P
tot
300
47 + 51
43
39
36
10
2
7
200
5
4
3
2
100
0
0
18115
100
200 °C
10
0.1
18120
2
3
4 5
1
2
3 4 5
T
amb
I
Z
10
mA
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 5 - Dynamic Resistance vs. Zener Current
1000
5
4
3
2
K/W
10
3
T
J
= 25 °C
5
4
3
2
R
zth
= R
thA
x V
Z
x
Δ
V
Z
Δ
T
j
r
zj
R
zth
100
5
4
3
2
10
2
5
4
3
2
10
5
4
3
2
2.7
3.6
4.7
5.1
5.6
10
5
4
3
2
negative
positive
1
0.1
18117
2
5
1
1
18121
2
3
4 5
1
2
5
10
I
Z
2
5
100 mA
10
2
3 4 5
100 V
V
Z
at I
Z
= 5 mA
Fig. 3 - Dynamic Resistance vs. Zener Current
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
Rev. 1.9, 08-Dec-11
Document Number: 85763
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BZX84-V-Series
www.vishay.com
Vishay Semiconductors
mV/°C
100
I
Z
= 5 mA
Ω
100
7
5
4
R
zj
3
2
Δ
V
Z
Δ
T
j
80
60
10
7
5
4
3
2
40
20
T
j
= 25 °C
I
Z
= 5 mA
1
2
3
4 5
1
10
2
0
0
18125
3 4 5
100 V
20
40
60
80
100 V
18122
V
Z
V
Z
Fig. 7 - Dynamic Resistance vs. Zener Voltage
Fig. 10 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
V
9
8
mV/°C
25
20
15
10
5
0
-5
1
18123
2
3
4 5
Δ
V
Z
Δ
T
j
5 mA
I
Z
= 1 mA
20 mA
7
Δ
V
Z
6
5
4
3
2
1
0
-1
51
43
36
I
Z
= 2 mA
0
20
40
60
80 100 120
T
j
140 °C
10
2
3 4 5
100 V
V
Z
18126
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
Fig. 11 - Change of Zener Voltage vs. Junction Temperature
V
0.8
0.7
0.6
V
Z
at I
Z
= 5 mA
25
15
10
V
1.6
1.4
1.2
Δ
V
Z
= R
zth
x I
Z
Δ
V
Z
0.5
0.4
0.3
0.2
0.1
0
-1
- 0.2
0
18124
3.6
4.7
8
7
6.2
5.9
5.6
5.1
Δ
V
Z
1
0.8
0.6
0.4
0.2
0
- 0.2
- 0.4
20
40
60
80
100 120 140 C
18127
1
2
3
4 5
10
2
3 4 5
100 V
T
j
V
Z
at I
Z
= 5 mA
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
Rev. 1.9, 08-Dec-11
Document Number: 85763
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
