Fast Page DRAM, 64KX4, 150ns, CMOS, CQCC18, CERAMIC, LCC-18
| 参数名称 | 属性值 |
| 厂商名称 | Micross |
| 零件包装代码 | LCC |
| 包装说明 | QCCN, |
| 针数 | 18 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 访问模式 | FAST PAGE |
| 最长访问时间 | 150 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD-30 代码 | R-CQCC-N18 |
| JESD-609代码 | e4 |
| 长度 | 11.43 mm |
| 内存密度 | 262144 bit |
| 内存集成电路类型 | FAST PAGE DRAM |
| 内存宽度 | 4 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 18 |
| 字数 | 65536 words |
| 字数代码 | 64000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 64KX4 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | QCCN |
| 封装形状 | RECTANGULAR |
| 封装形式 | CHIP CARRIER |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-STD-883 |
| 座面最大高度 | 2.11 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | PALLADIUM GOLD |
| 端子形式 | NO LEAD |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| 宽度 | 7.24 mm |
| AS4C4067EA-15/883C | AS4C4067C-15/883C | AS4C4067EC-12/883C | AS4C4067C-10/883C | AS4C4067EA-12/883C | AS4C4067EA-10/883C | AS4C4067EC-10/883C | AS4C4067EC-15/883C | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Fast Page DRAM, 64KX4, 150ns, CMOS, CQCC18, CERAMIC, LCC-18 | Fast Page DRAM, 64KX4, 150ns, CMOS, CDIP18, 0.300 INCH, CERAMIC, DIP-18 | Fast Page DRAM, 64KX4, 120ns, CMOS, CQCC18, CERAMIC, LCC-18 | Fast Page DRAM, 64KX4, 100ns, CMOS, CDIP18, 0.300 INCH, CERAMIC, DIP-18 | Fast Page DRAM, 64KX4, 120ns, CMOS, CQCC18, CERAMIC, LCC-18 | Fast Page DRAM, 64KX4, 100ns, CMOS, CQCC18, CERAMIC, LCC-18 | Fast Page DRAM, 64KX4, 100ns, CMOS, CQCC18, CERAMIC, LCC-18 | Fast Page DRAM, 64KX4, 150ns, CMOS, CQCC18, CERAMIC, LCC-18 |
| 零件包装代码 | LCC | DIP | LCC | DIP | LCC | LCC | LCC | LCC |
| 包装说明 | QCCN, | DIP, | QCCN, | DIP, | QCCN, | QCCN, | QCCN, | QCCN, |
| 针数 | 18 | 18 | 18 | 18 | 18 | 18 | 18 | 18 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE | FAST PAGE |
| 最长访问时间 | 150 ns | 150 ns | 120 ns | 100 ns | 120 ns | 100 ns | 100 ns | 150 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| JESD-30 代码 | R-CQCC-N18 | R-CDIP-T18 | R-CQCC-N18 | R-CDIP-T18 | R-CQCC-N18 | R-CQCC-N18 | R-CQCC-N18 | R-CQCC-N18 |
| JESD-609代码 | e4 | e0 | e0 | e0 | e4 | e4 | e0 | e0 |
| 长度 | 11.43 mm | 22.86 mm | 12.575 mm | 22.86 mm | 11.43 mm | 11.43 mm | 12.575 mm | 12.575 mm |
| 内存密度 | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit |
| 内存集成电路类型 | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM |
| 内存宽度 | 4 | 4 | 4 | 4 | 4 | 4 | 4 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 18 | 18 | 18 | 18 | 18 | 18 | 18 | 18 |
| 字数 | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
| 字数代码 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 | 64000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 组织 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 | 64KX4 |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | QCCN | DIP | QCCN | DIP | QCCN | QCCN | QCCN | QCCN |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | IN-LINE | CHIP CARRIER | IN-LINE | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 筛选级别 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 | MIL-STD-883 |
| 座面最大高度 | 2.11 mm | 3.93 mm | 1.91 mm | 3.93 mm | 2.11 mm | 2.11 mm | 1.91 mm | 1.91 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | NO | YES | NO | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子面层 | PALLADIUM GOLD | TIN LEAD | TIN LEAD | TIN LEAD | PALLADIUM GOLD | PALLADIUM GOLD | TIN LEAD | TIN LEAD |
| 端子形式 | NO LEAD | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子节距 | 1.27 mm | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | QUAD | DUAL | QUAD | DUAL | QUAD | QUAD | QUAD | QUAD |
| 宽度 | 7.24 mm | 7.62 mm | 7.3 mm | 7.62 mm | 7.24 mm | 7.24 mm | 7.3 mm | 7.3 mm |
| 厂商名称 | Micross | Micross | - | - | Micross | Micross | Micross | Micross |
| 是否无铅 | - | 含铅 | 含铅 | 含铅 | - | - | 含铅 | 含铅 |
| 是否Rohs认证 | - | 不符合 | 不符合 | 不符合 | - | - | 不符合 | 不符合 |
| 峰值回流温度（摄氏度） | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED |
| 处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | - | NOT SPECIFIED | NOT SPECIFIED |
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