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c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
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g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
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o
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s
o ec
BD675, BD675A, BD677,
BD677A, BD679, BD679A,
BD681
BD681 is a Preferred Device
Plastic Medium-Power
Silicon NPN Darlingtons
This series of plastic, medium−power silicon NPN Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
http://onsemi.com
•
High DC Current Gain:
•
•
•
•
h
FE
= 750 (Min) @ I
C
= 1.5 and 2.0 Adc
Monolithic Construction
BD675, 675A, 677, 677A, 679, 679A, 681 are complementary
with BD676, 676A, 678, 678A, 680, 680A, 682
BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803
Pb−Free Packages are Available*
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
60, 80, 100 VOLTS, 40 WATTS
COLLECTOR 2
BASE
3
EMITTER 1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
Rating
Symbol
V
CEO
Value
45
60
80
100
45
60
80
100
5.0
4.0
1.0
Unit
Vdc
Collector−Emitter Voltage
BD675, A
BD677, A
BD679, A
BD681
BD675, A
BD677, A
BD679, A
BD681
Collector−Base Voltage
V
CBO
Vdc
Emitter−Base Voltage
Collector Current
Base Current
V
EBO
I
C
I
B
Vdc
Adc
Adc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
P
D
40
0.32
W
W/°C
°C
T
J
, T
stg
– 55 to + 150
TO−225AA
CASE 77
STYLE 1
3 2
1
MARKING DIAGRAMS
YWW
BD6xxG
YWW
B
BD6xxAG
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Symbol
q
JC
Max
Unit
3.13
°C/W
BD6xx = Device Code
x = 75, 77, 79, 81
Y
= Year
WW
= Work Week
G
= Pb−Free Package
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2008
Preferred
devices are recommended choices for future use
and best overall value.
September, 2008
−
Rev. 13
1
Publication Order Number:
BD675/D
BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681
PD, POWER DISSIPATION (WATTS)
40
35
30
25
20
15
10
5.0
0
15
30
45
60
75
90
105
120
135
150
165
IC, COLLECTOR CURRENT (AMP)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
BV
CEO
Min
45
60
80
100
−
−
−
Max
−
−
−
−
Unit
Vdc
Collector−Emitter Breakdown Voltage, (Note 1)
(I
C
= 50 mAdc, I
B
= 0)
BD675, 675A
BD677, 677A
BD679, 679A
BD681
Collector Cutoff Current (V
CE
= Half Rated V
CEO
, I
B
= 0)
Collector Cutoff Current
(V
CB
= Rated BV
CEO
, I
E
= 0)
(V
CB
= Rated BV
CEO
, I
E
= 0, T
C
= 100’C)
I
CEO
I
CBO
500
0.2
2.0
2.0
mAdc
mAdc
Emitter Cutoff Current (V
BE
= 5.0 Vdc, I
C
= 0)
DC Currert Gain, (Note 1)
(I
C
= 1.5 Adc,V
CE
= 3.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 3.0 Vdc)
I
EBO
h
FE
—
mAdc
−
ON CHARACTERISTICS
BD675, 677, 679, 681
BD675A, 677A, 679A
BD677, 679, 681
BD675A, 677A, 679A
750
750
−
−
−
−
−
−
Collector−Emitter Saturation Voltage, (Note 1)
(I
C
= 1.5 Adc, I
B
= 30 mAdc)
(I
C
= 2.0 Adc, I
B
= 40 mAdc)
Base−Emitter On Voltage, (Note 1)
(I
C
= 1.5 Adc, V
CE
= 3.0 Vdc)
(I
C
= 2.0 Adc, V
CE
= 3 0 Vdc)
V
CE(sat)
V
BE(on)
2.5
2.8
2.5
2.5
−
Vdc
Vdc
BD677, 679, 681
BD675A, 677A, 679A
DYNAMIC CHARACTERISTICS
Small Signal Current Gain (I
C
= 1.5 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz)
h
fe
1.0
−
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
50
45
2.0
1.0
0.5
0.2
0.1
T
C
= 25°C
BONDING WIRE LIMIT
THERMALLY LIMIT at T
C
= 25°C
SECONDARY BREAKDOWN LIMIT
BD675, 675A
BD677, 677A
BD679, 679A
BD681
100
5.0
0.05
1.0
T
C
, CASE TEMPERATURE (°C)
2.0
5.0
10
50
20
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Power Temperature Derating
Figure 2. DC Safe Operating Area
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
http://onsemi.com
2
BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681
NPN
BD675, 675A
BD677, 677A
BD679, 679A
BD681
BASE
COLLECTOR
[
8.0 k
[
120
EMITTER
Figure 3. Darlington Circuit Schematic
ORDERING INFORMATION
Device
BD675
BD675G
BD675A
BD675AG
BD677
BD677G
BD677A
BD677AG
BD679
BD679G
BD679A
BD679AG
BD681
BD681G
Package
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
TO−225AA
TO−225AA
(Pb−Free)
Shipping
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
500 Units / Box
http://onsemi.com
3
BD675, BD675A, BD677, BD677A, BD679, BD679A, BD681
PACKAGE DIMENSIONS
TO−225AA
CASE 77−09
ISSUE Z
−B−
U
Q
−A−
1 2 3
F
M
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077-01 THRU -08 OBSOLETE, NEW STANDARD
077-09.
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5
_
TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
---
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5
_
TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
---
H
K
V
G
S
D
2 PL
0.25 (0.010)
M
J
R
0.25 (0.010)
A
M
A
M
M
B
M
B
M
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
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4
BD675/D