DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D100
BD136; BD138; BD140
PNP power transistors
Product specification
Supersedes data of 1997 Mar 26
1999 Apr 12
Philips Semiconductors
Product specification
PNP power transistors
FEATURES
•
High current (max. 1.5 A)
•
Low voltage (max. 80 V).
APPLICATIONS
•
General purpose power applications, e.g. driver stages
in hi-fi amplifiers and television circuits.
DESCRIPTION
PNP power transistor in a TO-126; SOT32 plastic
package. NPN complements: BD135, BD137 and BD139.
3
PINNING
PIN
1
2
BD136; BD138; BD140
DESCRIPTION
emitter
collector, connected to metal part of
mounting surface
base
handbook, halfpage
2
3
1
1
2
3
Top view
MAM272
Fig.1
Simplified outline (TO-126; SOT32)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
BD136
BD138
BD140
V
CEO
collector-emitter voltage
BD136
BD138
BD140
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
mb
≤
70
°C
open collector
open base
−
−
−
−
−
−
−
−
−65
−
−65
−45
−60
−80
−5
−1.5
−2
−1
8
+150
150
+150
V
V
V
V
A
A
A
W
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
−
−45
−60
−100
V
V
V
MIN.
MAX.
UNIT
1999 Apr 12
2
Philips Semiconductors
Product specification
PNP power transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-mb
Note
1. Refer to TO-126 (SOT32) standard mounting conditions.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−30
V
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
BD136; BD138; BD140
CONDITIONS
note 1
VALUE
100
10
UNIT
K/W
K/W
MIN.
−
−
−
40
63
25
63
100
−
−
−
−
TYP.
−
−
−
−
−
−
−
−
−
−
160
1.3
MAX. UNIT
−100
−10
−100
−
250
−
160
250
−0.5
−1
−
1.6
V
V
MHz
nA
µA
nA
I
E
= 0; V
CB
=
−30
V; T
j
= 125
°C
I
C
= 0; V
EB
=
−5
V
V
CE
=
−2
V; (see Fig.2)
I
C
=
−5
mA
I
C
=
−150
mA
I
C
=
−500
mA
DC current gain
I
C
=
−150
mA; V
CE
=
−2
V;
BD136-10; BD138-10; BD140-10 (see Fig.2)
BD136-16; BD138-16; BD140-16
V
CEsat
V
BE
f
T
h
FE1
-----------
h
FE2
collector-emitter saturation voltage
base-emitter voltage
transition frequency
DC current gain ratio of the
complementary pairs
I
C
=
−500
mA; I
B
=
−50
mA
I
C
=
−500
mA; V
CE
=
−2
V
I
C
=
−50
mA; V
CE
=
−5
V;
f = 100 MHz
I
C
= 150 mA;
V
CE
= 2 V
1999 Apr 12
3
Philips Semiconductors
Product specification
PNP power transistors
BD136; BD138; BD140
handbook, full pagewidth
160
MBH730
hFE
120
VCE =
−2
V
80
40
0
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
−10
4
Fig.2 DC current gain; typical values.
1999 Apr 12
4
Philips Semiconductors
Product specification
PNP power transistors
PACKAGE OUTLINE
BD136; BD138; BD140
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32
E
A
P1
P
D
L1
L
1
bp
2
w
M
3
c
Q
e
e1
0
2.5
scale
5 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
2.7
2.3
b
p
0.88
0.65
c
0.60
0.45
D
11.1
10.5
E
7.8
7.2
e
4.58
e1
2.29
L
16.5
15.3
L1
(1)
max
2.54
Q
1.5
0.9
P
3.2
3.0
P1
3.9
3.6
w
0.254
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT32
REFERENCES
IEC
JEDEC
TO-126
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-03-04
1999 Apr 12
5
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