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BDW42 - NPN, BDW46,
BDW47 - PNP
BDW42 and BDW47 are Preferred Devices
Darlington Complementary
Silicon Power Transistors
This series of plastic, medium-power silicon NPN and PNP
Darlington transistors are designed for general purpose and low speed
switching applications.
Features
http://onsemi.com
•
High DC Current Gain - h
FE
= 2500 (typ) @ I
C
= 5.0 Adc.
•
Collector Emitter Sustaining Voltage @ 30 mAdc:
•
•
•
•
V
CEO(sus)
= 80 Vdc (min) - BDW46
100 Vdc (min) - BDW42/BDW47
Low Collector Emitter Saturation Voltage
V
CE(sat)
= 2.0 Vdc (max) @ I
C
= 5.0 Adc
3.0 Vdc (max) @ I
C
= 10.0 Adc
Monolithic Construction with Built-In Base Emitter Shunt resistors
TO-220AB Compact Package
Pb-Free Packages Are Available*
15 AMP DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
80-100 VOLT, 85 WATT
MARKING
DIAGRAM
4
MAXIMUM RATINGS
Rating
Collector‐Emitter Voltage
BDW46
BDW42, BDW47
Collector‐Base Voltage
BDW46
BDW42, BDW47
Emitter‐Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EB
I
C
I
B
P
D
85
0.68
T
J
, T
stg
-55 to +150
W
W/°C
°C
V
CB
80
100
5.0
15
0.5
Vdc
Adc
Adc
Symbol
V
CEO
80
100
Vdc
Value
Unit
Vdc
1
2
3
TO-220AB
CASE 221A-09
STYLE 1
BDWxx
AYWWG
BDWxx = Device Code
x = 42, 46, or 47
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb-Free Package
ORDERING INFORMATION
Device
BDW42
BDW42G
Package
TO-220AB
TO-220AB
(Pb-Free)
TO-220AB
TO-220AB
(Pb-Free)
TO-220AB
TO-220AB
(Pb-Free)
Shipping
50 Units/Rail
50 Units/Rail
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction-to-Case
Symbol
R
qJC
Max
1.47
Unit
°C/W
BDW46
BDW46G
50 Units/Rail
50 Units/Rail
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BDW47
BDW47G
50 Units/Rail
50 Units/Rail
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred
devices are ON Semiconductor recommended
choices for future use and best overall value
©
Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 13
Publication Order Number:
BDW42/D
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Î Î Î Î
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Î Î
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2.0%.
2. Pulse Test non repetitive: Pulse Width = 250 ms.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
DYNAMIC CHARACTERISTICS
SECOND BREAKDOWN
(Note 2)
ON CHARACTERISTICS
(Note 1)
OFF CHARACTERISTICS
Small-Signal Current Gain
(I
C
= 3.0 Adc, V
CE
= 3.0 Vdc, f = 1.0 kHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
Magnitude of common emitter small signal short circuit current transfer ratio
(I
C
= 3.0 Adc, V
CE
= 3.0 Vdc, f = 1.0 MHz)
Second Breakdown Collector
Current with Base Forward Biased
BDW42
Base-Emitter On Voltage
(I
C
= 10 Adc, V
CE
= 4.0 Vdc)
Collector-Emitter Saturation Voltage
(I
C
= 5.0 Adc, I
B
= 10 mAdc)
(I
C
= 10 Adc, I
B
= 50 mAdc)
DC Current Gain
(I
C
= 5.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 10 Adc, V
CE
= 4.0 Vdc)
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 80 Vdc, I
E
= 0)
(V
CB
= 100 Vdc, I
E
= 0)
Collector Cutoff Current
(V
CE
= 40 Vdc, I
B
= 0)
(V
CE
= 50 Vdc, I
B
= 0)
Collector Emitter Sustaining Voltage (Note 1)
(I
C
= 30 mAdc, I
B
= 0)
BDW46/BDW47
Characteristic
BDW42 - NPN, BDW46, BDW47 - PNP
http://onsemi.com
BDW42
BDW46/BDW47
V
CE
= 28.4 Vdc
V
CE
= 40 Vdc
V
CE
= 22.5 Vdc
V
CE
= 36 Vdc
BDW46
BDW42/BDW47
BDW46
BDW42/BDW47
BDW46
BDW42/BDW47
V
CEO(sus)
Symbol
V
CE(sat)
V
BE(on)
I
CBO
I
CEO
I
EBO
C
ob
h
FE
I
S/b
h
fe
f
T
1000
250
Min
300
80
100
4.0
3.0
1.2
3.8
1.2
-
-
-
-
-
-
-
-
-
-
Max
200
300
3.0
2.0
3.0
2.0
1.0
1.0
2.0
2.0
-
-
-
-
-
-
-
-
-
-
mAdc
mAdc
mAdc
MHz
Unit
Adc
Vdc
Vdc
Vdc
pF
2
BDW42 - NPN, BDW46, BDW47 - PNP
90
80
PD, POWER DISSIPATION (WATTS)
70
60
50
40
30
20
10
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating Curve
5.0
R
B
AND R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE I
B
[
100 mA
MSD6100 USED BELOW I
B
[
100 mA
TUT
R
B
V
2
APPROX
V
CC
- 30 V
R
C
3.0
2.0
SCOPE
t, TIME (
μ
s)
1.0
0.7
0.5
0.3
0.2
t
s
t
f
+ 8.0 V
0
V
1
APPROX
51
D
1
+ 4.0 V
[
8.0 k
[
150
t
r
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
0.2
0.3
- 12 V
t
r
, t
f
v
10 ns
DUTY CYCLE = 1.0%
25
ms
0.1
for t
d
and t
r
, D
1
id disconnected
0.07
and V
2
= 0
0.05
0.1
For NPN test circuit reverse all polarities
t
d
@ V
BE(off)
= 0 V
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
I
C
, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times Test Circuit
Figure 3. Switching Times
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
D = 0.5
0.2
0.1
P
(pk)
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.05
0.02
R
qJC
(t) = r(t) R
qJC
R
qJC
= 1.92°C/W
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
qJC
(t)
50
100
200 300
500
1000
0.01
SINGLE PULSE
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
30
Figure 4. Thermal Response
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3
BDW42 - NPN, BDW46, BDW47 - PNP
ACTIVE-REGION SAFE OPERATING AREA
50
IC, COLLECTOR CURRENT (AMP)
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
1.0
BDW42
2.0 3.0
5.0 7.0 10
20 30
50
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70 100
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITED
@ T
C
= 25°C (SINGLE PULSE)
dc
T
J
= 25°C
1.0 ms
0.1 ms
IC, COLLECTOR CURRENT (AMP)
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
1.0
BDW46
BDW47
2.0 3.0
5.0 7.0 10
20 30
50
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70 100
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITED
@ T
C
= 25°C (SINGLE PULSE)
T
J
= 25°C
1.0 ms
0.1 ms
0.5 ms
0.5 ms
dc
Figure 5. BDW42
Figure 6. BDW46 and BDW47
There are two limitations on the power handling ability of a
transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
- V
CE
limits
of the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation
than the curves indicate. The data of Figure 5 and 6 is based on
T
J(pk)
= 200°C; T
C
is variable depending on conditions.
Second breakdown pulse limits are valid for duty cycles to
10% provided T
J(pk)
v
200°C. T
J(pk)
may be calculated from
the data in Figure 4. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
*Linear extrapolation
10,000
hFE, SMALL-SIGNAL CURRENT GAIN
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0
2.0
C, CAPACITANCE (pF)
300
T
J
= + 25°C
200
T
J
= 25°C
V
CE
= 3.0 V
I
C
= 3.0 A
BDW46, 47 (PNP)
BDW42 (NPN)
5.0
10
20
50 100
f, FREQUENCY (kHz)
200
500 1000
100
70
50
C
ib
C
ob
BDW46, 47 (PNP)
BDW42 (NPN)
0.2
0.5
1.0 2.0
5.0 10
20
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
30
0.1
Figure 7. Small-Signal Current Gain
Figure 8. Capacitance
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