INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
BDW41
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 80V(Min)
·High
DC Current Gain
: h
FE
= 1000(Min) @I
C
= 5A
·Low
Collector Saturation Voltage
: V
CE(sat)
= 2.0V(Max.)@ I
C
= 5.0A
= 3.0V(Max.)@ I
C
= 10A
·Complement
to Type BDW46
APPLICATIONS
·Designed
for general purpose and low speed switching
applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
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VALUE
80
UNIT
V
80
5
V
V
15
A
0.5
85
150
-55~150
A
W
℃
℃
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.47
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BDW41
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 30mA; I
B
= 0
80
V
V
CE(
sat
)-1
V
CE(
sat
)-2
V
BE(
on
)
Collector-Emitter Saturation Voltage
I
C
= 5A; I
B
= 10mA
B
2.0
V
Collector-Emitter Saturation Voltage
I
C
= 10A; I
B
= 50mA
3.0
V
Base-Emitter On Voltage
I
C
= 10A; V
CE
= 4V
3.0
V
I
CBO
Collector Cutoff Current
V
CB
= 80V; I
E
= 0
1.0
mA
I
CEO
Collector Cutoff Current
I
EBO
Emitter Cutoff Current
h
FE-1
DC Current Gain
h
FE-2
f
T
DC Current Gain
Current-Gain—Bandwidth Product
C
OB
Output Capacitance
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V
CE
= 40V; I
B
= 0
B
2.0
mA
V
EB
= 5V; I
C
= 0
2.0
mA
I
C
= 5A; V
CE
= 4V
1000
I
C
= 10A; V
CE
= 4V
250
I
C
= 3A; V
CE
= 3V; f
test
= 1MHz
4
MHz
I
E
= 0; V
CB
= 10V; f
test
= 0.1MHz
200
pF
isc Website：www.iscsemi.cn
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