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74HC11; 74HCT11
Triple 3-input AND gate
Rev. 6 — 19 November 2015
Product data sheet
1. General description
The 74HC11; 74HCT11 is a triple 3-input AND gate. Inputs include clamp diodes. This
enables the use of current limiting resistors to interface inputs to voltages in excess of
V
CC
.
2. Features and benefits
Complies with JEDEC standard no. 7A
Input levels:
For 74HC11: CMOS level
For 74HCT11: TTL level
ESD protection:
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Multiple package options
Specified from
40 C
to +85
C
and from
40 C
to +125
C
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74HC11D
74HCT11D
74HC11DB
74HCT11DB
74HC11PW
74HCT11PW
40 C
to +125
C
TSSOP14
40 C
to +125
C
SSOP14
40 C
to +125
C
Name
SO14
Description
plastic small outline package; 14 leads; body width
3.9 mm
plastic shrink small outline package; 14 leads; body
width 5.3 mm
plastic thin shrink small outline package; 14 leads;
body width 4.4 mm
Version
SOT108-1
SOT337-1
SOT402-1
Type number
NXP Semiconductors
74HC11; 74HCT11
Triple 3-input AND gate
4. Functional diagram
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
Fig 3.
Logic diagram for one gate
5. Pinning information
5.1 Pinning
Fig 4.
Pin configuration SO14
Fig 5.
Pin configuration (T)SSOP14
5.2 Pin description
Table 2.
Symbol
1A, 2A, 3A
1B, 2B, 3B
GND
1C, 2C, 3C
1Y, 2Y, 3Y
V
CC
Pin description
Pin
1, 3, 9
2, 4, 10
7
13, 5, 11
12, 6, 8
14
Description
data input
data input
ground (0 V)
data input
data output
supply voltage
74HC_HCT11
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 6 — 19 November 2015
2 of 14
NXP Semiconductors
74HC11; 74HCT11
Triple 3-input AND gate
6. Functional description
Table 3.
Input
nA
L
X
X
H
[1]
Function selection
[1]
Output
nB
X
L
X
H
nC
X
X
L
H
nY
L
L
L
H
H = HIGH voltage level; L = LOW voltage level; X = don’t care
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
tot
[1]
[2]
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
total power dissipation
Conditions
V
I
<
0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
0.5
V or V
O
> V
CC
+ 0.5 V
0.5
V < V
O
< V
CC
+ 0.5 V
[1]
[1]
Min
0.5
-
-
-
-
50
65
Max
+7
20
20
25
50
-
+150
500
Unit
V
mA
mA
mA
mA
mA
C
mW
SO14 and (T)SSOP14 packages
[2]
-
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For SO14 package: P
tot
derates linearly with 8 mW/K above 70
C.
For (T)SSOP14 packages: P
tot
derates linearly with 5.5 mW/K above 60
C.
74HC_HCT11
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 6 — 19 November 2015
3 of 14
NXP Semiconductors
74HC11; 74HCT11
Triple 3-input AND gate
8. Recommended operating conditions
Table 5.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V)
Symbol Parameter
V
CC
V
I
V
O
T
amb
t/V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise and fall rate
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Conditions
Min
2.0
0
0
40
-
-
-
74HC11
Typ
5.0
-
-
-
-
1.67
-
Max
6.0
V
CC
V
CC
+125
625
139
83
Min
4.5
0
0
40
-
-
-
74HCT11
Typ
5.0
-
-
-
-
1.67
-
Max
5.5
V
CC
V
CC
+125
-
139
-
V
V
V
C
ns/V
ns/V
ns/V
Unit
9. Static characteristics
Table 6.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
74HC11
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
I
O
=
20 A;
V
CC
= 2.0 V
I
O
=
20 A;
V
CC
= 4.5 V
I
O
=
20 A;
V
CC
= 6.0 V
I
O
=
4.0
mA; V
CC
= 4.5 V
I
O
=
5.2
mA; V
CC
= 6.0 V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 20
A;
V
CC
= 2.0 V
I
O
= 20
A;
V
CC
= 4.5 V
I
O
= 20
A;
V
CC
= 6.0 V
I
O
= 4.0 mA; V
CC
= 4.5 V
I
O
= 5.2 mA; V
CC
= 6.0 V
I
I
I
CC
input leakage
current
supply current
V
I
= V
CC
or GND;
V
CC
= 6.0 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
-
-
-
-
-
-
-
0
0
0
0.15
0.16
-
-
0.1
0.1
0.1
0.26
0.26
0.1
2.0
-
-
-
-
-
-
-
0.1
0.1
0.1
0.33
0.33
1
20
-
-
-
-
-
-
-
0.1
0.1
0.1
0.4
0.4
1
40
V
V
V
V
V
A
A
1.9
4.4
5.9
3.98
5.48
2.0
4.5
6.0
4.32
5.81
-
-
-
-
-
1.9
4.4
5.9
3.84
5.34
-
-
-
-
-
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
V
V
V
V
V
1.5
3.15
4.2
-
-
-
1.2
2.4
3.2
0.8
2.1
2.8
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
Conditions
Min
25
C
Typ
Max
40 C
to +85
C 40 C
to +125
C
Unit
Min
Max
Min
Max
74HC_HCT11
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 6 — 19 November 2015
4 of 14
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