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BR100/03

产品描述DIAC, 36 V, DIAC, DO-35
产品类别模拟混合信号IC    触发装置   
文件大小16KB,共3页
制造商NXP(恩智浦)
官网地址https://www.nxp.com
标准
下载文档 详细参数 选型对比 全文预览

BR100/03概述

DIAC, 36 V, DIAC, DO-35

BR100/03规格参数

参数名称属性值
是否Rohs认证符合
厂商名称NXP(恩智浦)
包装说明LONG FORM, O-LALF-W2
Reach Compliance Codeunknown
ECCN代码EAR99
最大转折电压36 V
最小转折电压28 V
外壳连接ISOLATED
配置SINGLE
JEDEC-95代码DO-35
JESD-30 代码O-LALF-W2
元件数量1
端子数量2
最高工作温度100 °C
封装主体材料GLASS
封装形状ROUND
封装形式LONG FORM
认证状态Not Qualified
表面贴装NO
端子形式WIRE
端子位置AXIAL
触发设备类型DIAC

BR100/03文档预览

Philips Semiconductors
Product Specification
Silicon Bi-directional Trigger Device
BR100/03
GENERAL DESCRIPTION
Silicon bidirectional trigger device in a
glass envelope intended for use in
triac and thyristor trigger circuits.
QUICK REFERENCE DATA
SYMBOL
V
(BO)
V
O
I
FRM
PARAMETER
Breakover voltage
Output voltage
Repetitive peak forward current
MIN.
28
7
-
MAX.
36
-
2
UNIT
V
V
A
OUTLINE - SOD27
SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
I
FRM
P
tot
T
stg
T
j
PARAMETER
Repetitive peak forward
current
Total power dissipation
Storage temperature
Operating junction
temperature
CONDITIONS
t
10
µs,
T
a
50˚C; f = 60 Hz
T
a
= 50˚C
MIN.
-
-
-55
-
MAX.
2
150
125
100
UNIT
A
mW
˚C
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-a
R
th j-lead
PARAMETER
CONDITIONS
MIN.
-
-
TYP.
330
150
MAX. UNIT
-
-
K/W
K/W
Thermal resistance junction to in free air
ambient
Thermal resistance junction to
leads
CHARACTERISTICS
T
a
= 25 ˚C unless otherwise stated.
SYMBOL
V
(BO)
|V
(BO)+
| - |V
(BO)-
|
V
O
I
(BO)
dV
(BO)
/dT
t
r
PARAMETER
Breakover voltage
Breakover voltage symmetry
Output voltage
Breakover current
Temperature coefficient of
V
(BO)
Risetime
CONDITIONS
I = I
(BO)
I = I
(BO)
, see fig: 1
R
L
= 20
Ω;
Circuit of fig: 2
V = V
(BO)
I
p
= 0.5 A; Circuit of fig: 2
MIN.
28
-
7
-
-
-
TYP.
32
-
-
-
0.1
1.5
MAX. UNIT
36
3.5
-
50
-
V
V
V
µA
%/K
µs
February 1996
1
Rev 1.100
Philips Semiconductors
Product Specification
Silicon Bi-directional Trigger Device
BR100/03
I
VBO
D.U.T.
10k
I(BO)I
500k
IT
V(BO)III
V(BO)I
I(BO)III
V
100nF
230 V, RMS, 50Hz
10R
Set load resistance
to 20 Ohms when
measuring output voltage
Vo
50R
Adjust for Ip=0.5A
when measuring risetime
Fig.1. Current-voltage characteristics
Fig.2. Test circuit for output voltage and risetime.
MECHANICAL DATA
Dimensions in mm
4.5
max
0.56
max
1.95
max
24
min
24
min
Fig.3. SOD27.
February 1996
2
Rev 1.100
Philips Semiconductors
Product Specification
Silicon Bi-directional Trigger Device
BR100/03
DEFINITIONS
Data sheet status
Objective specification
Product specification
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
This data sheet contains target or goal specifications for product development.
This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1996
3
Rev 1.100

BR100/03相似产品对比

BR100/03 BR100/03,113 BR100/03T/R BR100/03/T/R
描述 DIAC, 36 V, DIAC, DO-35 DIAC 28-36V 2A ALF2 DIAC, 36 V, DIAC, DO-35, HERMETIC SEALED, GLASS PACKAGE-2 36V, DIAC, DO-35
是否Rohs认证 符合 符合 符合 符合
Reach Compliance Code unknown unknown compliant not_compliant
最大转折电压 36 V 36 V 36 V 36 V
最小转折电压 28 V 28 V 28 V 28 V
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED
配置 SINGLE SINGLE SINGLE SINGLE
JEDEC-95代码 DO-35 DO-35 DO-35 DO-35
JESD-30 代码 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
元件数量 1 1 1 1
端子数量 2 2 2 2
最高工作温度 100 °C 100 °C 100 °C 100 °C
封装主体材料 GLASS GLASS GLASS GLASS
封装形状 ROUND ROUND ROUND ROUND
封装形式 LONG FORM LONG FORM LONG FORM LONG FORM
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO
端子形式 WIRE WIRE WIRE WIRE
端子位置 AXIAL AXIAL AXIAL AXIAL
触发设备类型 DIAC DIAC DIAC DIAC
厂商名称 NXP(恩智浦) - NXP(恩智浦) NXP(恩智浦)
包装说明 LONG FORM, O-LALF-W2 HERMETIC SEALED, GLASS PACKAGE-2 LONG FORM, O-LALF-W2 -
ECCN代码 EAR99 EAR99 - EAR99
JESD-609代码 - e3 e3 e3
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
端子面层 - Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

 
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