Bulletin I27099 rev. C 03/01
IRK.F200.. SERIES
FAST THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
MAGN-A-pak Power Modules
Features
Fast turn-off thyristor
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 V
RMS
isolating voltage
Industrial standard package
UL E78996 approved
200 A
Description
These series of MAGN-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
C
I
T(RMS)
I
TSM
I
2
t
@ 50Hz
@ 60Hz
@ 50Hz
@ 60Hz
I
2
√t
t
q
t
rr
V
DRM
/ V
RRM
T
J
range
IRK.F200..
200
85
444
7600
8000
290
265
2900
20 and 25
2
up to 1200
- 40 to 125
Units
A
°C
A
A
A
KA
2
s
KA
2
s
KA
2
√s
µs
µs
V
o
C
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1
IRK.F200.. Series
Bulletin I27099 rev.
C
03/01
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number
Code
08
IRK.F200-
12
V
RRM
/V
DRM
, maximum repetitive
peak reverse voltage
V
800
1200
V
RSM
, maximum non-
repetitive peak rev. voltage
V
800
1200
I
RRM
/I
DRM
max.
@ T
J
= 125°C
mA
50
Current Carrying Capacity
I
TM
180
o
el
50Hz
400Hz
2500Hz
5000Hz
10000Hz
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Case temperature
Equivalent values for RC circuit
50
85
10Ω/0.47µF
380
460
310
250
180
50
80%V
DRM
50
60
-
85
560
690
450
360
280
50
180
o
el
630
710
530
410
300
50
80%V
DRM
-
60
850
1060
760
560
410
50
I
TM
100µs
2460
1570
630
410
-
50
80%V
DRM
-
85
-
60
3180
2080
860
560
-
50
A
A
A
A
A
V
V
A/µs
°C
I
TM
Frequency f
Units
10Ω/0.47µF
10Ω/0.47µF
On-state Conduction
Parameter
I
T(AV)
I
T(RMS)
I
TSM
Maximum average on-state current
@ Case temperature
Maximum RMS current
Maximum peak, one-cycle,
non-repetitive surge current
IRK.F200..
200
85
444
7600
8000
6400
6700
Units Conditions
A
°C
A
A
as AC switch
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
KA
2
s
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
2
180° conduction, half sine wave
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
Sinusoidal half wave,
Initial T
J
= 125°C
I
2
t
Maximum I
2
t for fusing
290
265
205
187
I
√t
2
Maximum I
√t
for fusing
2
2900
1.18
1.25
0.74
0.70
1.73
600
1000
KA
√s
t = 0 to 10ms, no voltage reapplied
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
mW
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
V
mA
mA
I
pk
= 600A, T
J
= T
J
max., t
p
= 10ms sine pulse
T
J
= 25°C, I
T
> 30 A
T
J
= 25°C, V
A
= 12V, Ra = 6Ω, Ig = 1A
V
T(TO)1
Low level value of threshold voltage
V
T(TO)2
High level value of threshold voltage
r
t1
r
t2
V
TM
I
H
I
L
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
Typical latching current
2
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IRK.F200.. Series
Bulletin I27099 rev.
C
03/01
Switching
Parameter
di/dt
Maximum non-repetitive rate of rise
IRK.F200..
800
Units Conditions
A/µs
Gate drive 20V, 20Ω, tr
≤
1ms, V
D
= 80% V
DRM
T
J
= 25°C
I
TM
= 350A, di/dt = -25A/µs, V
R
= 50V, T
J
= 25°C
I
TM
= 750A, T
J
= 125°C, di/dt = -25A/µs,
µs
V
R
= 50V, dv/dt = 400V/µs linear to 80% V
DRM
t
rr
t
q
Maximum recovery time
Maximum turn-off time
K
20
2
J
25
µs
Blocking
Parameter
dv/dt
Maximum critical rate of rise of off-state
voltage
V
INS
I
RRM
I
DRM
RMS isolation voltage
Maximum peak reverse and off-state
leakage current
3000
50
V
mA
50 Hz, circuit to base, T
J
= 25°C, t = 1 s
T
J
= 125°C, rated V
DRM
/V
RRM
applied
IRK.F200..
1000
Units Conditions
V/µs
T
J
= 125°C., exponential to = 67% V
DRM
Triggering
Parameter
P
GM
P
G(AV)
I
GM
- V
GM
I
GT
V
GT
I
GD
V
GD
Maximum peak gate power
Maximum peak average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Max. DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
IRK.F200..
60
10
10
5
200
3
20
0.25
Units Conditions
W
W
A
V
mA
V
mA
V
T
J
= 125°C, rated V
DRM
applied
T
J
= 25°C, V
ak
12V, Ra = 6
f = 50 Hz, d% = 50
T
J
= 125°C, f = 50Hz, d% = 50
T
J
= 125°C, t
p
< 5ms
Thermal and Mechanical Specifications
Parameter
T
J
T
stg
R
thJC
Max. junction operating temperature range
Max. storage temperature range
Max. thermal resistance, junction to
case
R
thC-hs
Max. thermal resistance, case to
heatsink
T
Mounting torque ± 10% MAP to heatsink
busbar to MAP
wt
Approximate weight
4 - 6 (35 - 53)
4 - 6 (35 - 53)
500 (17.8)
Nm
0.025
K/W
Mounting surface flat and greased
Per module
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
(lb*in)
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
g (oz)
lubricated with a compound
IRK.F200..
- 40 to 125
- 40 to 150
0.125
Units Conditions
°C
K/W
Per junction, DC operation
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3
IRK.F200.. Series
Bulletin I27099 rev. C 03/01
∆R
thJC
Conduction
Conduction angle
180°
120°
90°
60°
30°
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Sinusoidal conduction Rectangular conduction
0.009
0.010
0.014
0.020
0.032
0.006
0.011
0.015
0.020
0.033
Units
K/W
Conditions
T
J
= 125°C
Ordering
Information Table
Device
Code
IRK
1
T
2
F
3
200
4
-
12
5
H
6
K
7
1
2
3
4
5
6
7
- Module type
- Circuit configuration
- Fast SCR
- Current rating: I
T(AV)
x 10 rounded
- Voltage code: Code x 100 = V
RRM
(See Voltage Ratings Table)
- dv/dt code: H
≤
400V/µs
- t
q
code: K
≤
20µs
J
≤
25µs
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.F200.. Series
Bulletin I27099 rev. C 03/01
Outline
Table
- All dimensions in millimeters (inches)
- Dimensions are nominal
- Full engineering drawings are available
on request
- UL identification number for gate
and cathode wire: UL 1385
- UL identification number for package:
UL 94V0
IRKTF..
IRKHF..
IRKLF..
IRKUF..
IRKVF..
IRKKF..
IRKNF..
M a xim um A llo w ab le C ase Te m pe rature ( C )
M ax im um Allo w ab le C a se Tem p erature ( C )
130
120
110
100
90
IR K.F200.. Series
R
thJC
(D C ) = 0.12 5 K/W
130
120
110
100
90
30
80
70
60
0
50
IR K .F2 00.. Serie s
R
thJC
(D C ) = 0.12 5 K/W
C o nd uc tio n A ng le
C o nd uctio n P erio d
30
80
70
60
0
40
80
120
160
200
240
A vera ge O n-sta te C urrent (A )
60
90
120
180
60
90
12 0
180
100
150
200
250
DC
300
350
A verag e On -state C urren t (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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