SEMiX553GAR128Ds
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 600 V
V
GE
≤
20 V
V
CES
≤
1200 V
V
GES
t
psc
T
j
Inverse diode
I
F
T
c
= 25 °C
T
c
= 80 °C
T
j
= 125 °C
T
j
= 150 °C
T
c
= 25 °C
T
c
= 80 °C
1200
533
379
300
600
-20 ... 20
10
-40 ... 150
421
289
300
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
600
2300
-40 ... 150
T
c
= 25 °C
T
c
= 80 °C
521
347
300
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
600
2300
-40 ... 150
600
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 3s
SPT IGBT Modules
SEMiX553GAR128Ds
®
T
j
= 150 °C
I
Fnom
Features
• Homogeneous Si
• SPT = Soft-Punch-Through technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
I
FRM
I
FSM
T
j
Freewheeling diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
T
j
= 150 °C
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders up to 20 kHz
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
I
C
= 300 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
GE
= 15 V
T
j
= 25 °C
T
j
= 125 °C
4.5
T
j
= 25 °C
T
j
= 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
28.3
1.86
1.17
2880
1.33
1.9
2.1
1
0.9
3.0
4.0
5
0.1
2.35
2.55
1.15
1.05
4.0
5.0
6.5
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
Conditions
min.
typ.
max.
Unit
V
GE
=V
CE
, I
C
= 12 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
GAR
© by SEMIKRON
Rev. 9 – 16.12.2009
1
SEMiX553GAR128Ds
Characteristics
Symbol
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
per IGBT
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
I
F
= 300 A
T
j
= 125 °C
di/dt
off
= 5400 A/µs T = 125 °C
j
V
GE
= -15 V
T
j
= 125 °C
V
CC
= 600 V
per diode
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
w
Temperatur Sensor
R
100
B
100/125
T
c
=100°C (R
25
=5 kΩ)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)];
T[K];
493 ± 5%
3550
±2%
Ω
K
res., terminal-chip
per module
to heat sink (M5)
to terminals (M6)
3
2.5
T
C
= 25 °C
T
C
= 125 °C
20
0.7
1
0.04
5
5
300
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
T
j
= 25 °C
T
j
= 125 °C
I
F
= 300 A
T
j
= 125 °C
di/dt
off
= 5400 A/µs T = 125 °C
j
V
GE
= -15 V
T
j
= 125 °C
V
CC
= 600 V
per diode
0.75
0.5
2.5
2.7
0.75
0.5
2.5
2.7
2.0
1.8
1.1
0.85
3.0
3.2
325
46
17
0.11
2.0
1.8
1.1
0.85
3.0
3.2
325
46
17
0.11
2.5
2.3
1.45
1.2
3.5
3.7
Conditions
V
CC
= 600 V
I
C
= 300 A
R
G on
= 3
Ω
R
G off
= 3
Ω
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
min.
typ.
185
65
27
635
80
33
max.
Unit
ns
ns
mJ
ns
ns
mJ
0.061
2.50
2.3
1.45
1.2
3.5
3.7
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
SEMiX
®
3s
SPT IGBT Modules
SEMiX553GAR128Ds
Inverse diode
V
F
= V
EC
I
F
= 300 A
V
GE
= 0 V
chip
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Features
• Homogeneous Si
• SPT = Soft-Punch-Through technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders up to 20 kHz
Freewheeling diode
V
F
= V
EC
I
F
= 300 A
V
GE
= 0 V
chip
V
F0
GAR
2
Rev. 9 – 16.12.2009
© by SEMIKRON
SEMiX553GAR128Ds
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 9 – 16.12.2009
3
SEMiX553GAR128Ds
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 9 – 16.12.2009
© by SEMIKRON
SEMiX553GAR128Ds
SEMiX 3s
spring configuration
© by SEMIKRON
Rev. 9 – 16.12.2009
5
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