SEMiX452GB126HDs
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 600 V
V
GE
≤
20 V
T
j
= 125 °C
V
CES
≤
1200 V
V
GES
t
psc
T
j
= 150 °C
T
c
= 25 °C
T
c
= 80 °C
1200
455
319
300
600
-20 ... 20
10
-40 ... 150
T
c
= 25 °C
T
c
= 80 °C
394
272
300
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
600
1900
-40 ... 150
600
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 2s
Trench IGBT Modules
SEMiX452GB126HDs
®
T
j
Inverse diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Preliminary Data
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
T
j
= 150 °C
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
R
th(j-s)
per IGBT
per IGBT
I
C
= 300 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
GE
= 15 V
T
j
= 25 °C
T
j
= 125 °C
5
T
j
= 25 °C
T
j
= 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
21.5
1.13
0.98
2400
2.50
280
65
35
630
130
45
0.083
1.7
2.00
1
0.9
2.3
3.7
5.8
0.1
2.1
2.45
1.2
1.1
3.0
4.5
6.5
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
K/W
Remarks
• Case temperatur limited to T
C
=125°C
max.
• Not for new design
Conditions
min.
typ.
max.
Unit
V
GE
=V
CE
, I
C
= 12 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 600 V
I
C
= 300 A
T
j
= 125 °C
R
G on
= 2
Ω
R
G off
= 2
Ω
GB
© by SEMIKRON
Rev. 16 – 02.12.2008
1
SEMiX452GB126HDs
Characteristics
Symbol
Conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
I
RRM
Q
rr
E
rr
R
th(j-c)
SEMiX452GB126HDs
min.
typ.
1.6
1.6
max.
1.8
1.8
1.1
0.9
2.3
3.0
Unit
V
V
V
V
mΩ
mΩ
A
µC
mJ
Inverse diode
V
F
= V
EC
I
F
= 300 A
V
GE
= 0 V
chiplevel
V
F0
r
F
0.9
0.7
1.7
2.3
1
0.8
2.0
2.7
375
75
33
SEMiX 2s
Trench IGBT Modules
®
I
F
= 300 A
T
j
= 125 °C
di/dt
off
= 6200 A/µs T = 125 °C
j
V
GE
= -15 V
T
j
= 125 °C
V
CC
= 600 V
per diode
per diode
0.15
K/W
K/W
R
th(j-s)
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
w
Preliminary Data
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
18
res., terminal-chip
per module
to heat sink (M5)
to terminals (M6)
3
2.5
T
C
= 25 °C
T
C
= 125 °C
0.7
1
0.045
5
5
250
0,493
±5%
3550
±2%
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
Temperature sensor
R
100
B
100/125
T
c
=100°C (R
25
=5 kΩ)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)];
T[K];
kΩ
K
Remarks
• Case temperatur limited to T
C
=125°C
max.
• Not for new design
GB
2
Rev. 16 – 02.12.2008
© by SEMIKRON
SEMiX452GB126HDs
Fig. 1 Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2 Rated current vs. temperature I
C
= f (T
C
)
Fig. 3 Typ. turn-on /-off energy = f (I
C
)
Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
© by SEMIKRON
Rev. 16 – 02.12.2008
3
SEMiX452GB126HDs
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
Rev. 16 – 02.12.2008
© by SEMIKRON
SEMiX452GB126HDs
SEMiX 2s
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 16 – 02.12.2008
5
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