SEMiX353GD126HDc
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 600 V
V
GE
≤
20 V
V
CES
≤
1200 V
V
GES
t
psc
T
j
Inverse diode
I
F
T
c
= 25 °C
T
c
= 80 °C
T
j
= 125 °C
T
j
= 150 °C
T
c
= 25 °C
T
c
= 80 °C
1200
364
256
225
450
-20 ... 20
10
-40 ... 150
329
228
225
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
450
1700
-40 ... 150
600
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 33c
Trench IGBT Modules
SEMiX353GD126HDc
®
T
j
= 150 °C
I
Fnom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
per IGBT
I
C
= 225 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
GE
= 15 V
V
GE
=V
CE
, I
C
= 9 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
V
CC
= 600 V
I
C
= 225 A
R
G on
= 2
Ω
R
G off
= 2
Ω
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
16.0
0.84
0.73
1800
3.33
265
55
26.5
585
120
32.5
0.1
T
j
= 25 °C
T
j
= 125 °C
5
1.7
2
1
0.9
3.1
4.9
5.8
0.1
2.1
2.45
1.2
1.1
4.0
6.0
6.5
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
ns
ns
mJ
ns
ns
mJ
K/W
Conditions
min.
typ.
max.
Unit
Remarks
• Case temperatur limited to T
C
=125°C
max.
• Not for new design
GD
© by SEMIKRON
Rev. 14 – 16.12.2009
1
SEMiX353GD126HDc
Characteristics
Symbol
Conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
r
F
T
j
= 25 °C
T
j
= 125 °C
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
res., terminal-chip
per module
to heat sink (M5)
to terminals (M6)
3
2.5
T
C
= 25 °C
T
C
= 125 °C
20
0.7
1
0.014
5
5
900
T
c
=100°C (R
25
=5 kΩ)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)];
T[K];
493 ± 5%
3550
±2%
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
w
Temperatur Sensor
R
100
B
100/125
Ω
K
g
I
F
= 225 A
T
j
= 125 °C
di/dt
off
= 5600 A/µs T = 125 °C
j
V
GE
= -15 V
T
j
= 125 °C
V
CC
= 600 V
per diode
0.9
0.7
2.2
3.1
min.
typ.
1.6
1.6
1
0.8
2.7
3.6
330
69
29
max.
1.80
1.8
1.1
0.9
3.1
4.0
Unit
V
V
V
V
mΩ
mΩ
A
µC
mJ
Inverse diode
V
F
= V
EC
I
F
= 225 A
V
GE
= 0 V
chip
V
F0
SEMiX
®
33c
Trench IGBT Modules
SEMiX353GD126HDc
0.17
K/W
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
R
th(c-s)
M
s
M
t
Typical Applications*
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to T
C
=125°C
max.
• Not for new design
GD
2
Rev. 14 – 16.12.2009
© by SEMIKRON
SEMiX353GD126HDc
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 14 – 16.12.2009
3
SEMiX353GD126HDc
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 14 – 16.12.2009
© by SEMIKRON
SEMiX353GD126HDc
SEMiX 33c
pinout
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 14 – 16.12.2009
5
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