SEMiX352GAR128Ds
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 2xI
Cnom
V
CC
= 600 V
V
GE
≤
20 V
T
j
= 125 °C
V
CES
≤
1200 V
V
GES
t
psc
T
j
= 150 °C
T
c
= 25 °C
T
c
= 80 °C
1200
377
268
200
400
-20 ... 20
10
-40 ... 150
T
c
= 25 °C
T
c
= 80 °C
297
204
200
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
400
2000
-40 ... 150
T
c
= 25 °C
T
c
= 80 °C
200
I
FRM
= 2xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
400
2000
-40 ... 150
600
-40 ... 125
AC sinus 50Hz, t = 1 min
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SEMiX 2s
SPT IGBT Modules
SEMiX352GAR128Ds
®
T
j
Inverse diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Freewheeling diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
T
j
= 150 °C
Preliminary Data
Features
• Homogeneous Si
• SPT = Soft-Punch-Through technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
T
j
= 150 °C
Typical Applications
• AC inverter drives
• UPS
• Electronic welders up to 20 kHz
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
I
C
= 200 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
V
GE
= 15 V
V
GE
=V
CE
, I
C
= 8 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
T
j
= 25 °C
T
j
= 125 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
18.9
1.24
0.78
1920
2.00
T
j
= 25 °C
T
j
= 125 °C
4.5
1.9
2.10
1
0.9
4.5
6.0
5
0.1
2.35
2.55
1.15
1.05
6.0
7.5
6.5
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
Conditions
min.
typ.
max.
Unit
GAR
© by SEMIKRON
Rev. 8 – 02.12.2008
1
SEMiX352GAR128Ds
Characteristics
Symbol
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
per IGBT
per IGBT
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
R
th(j-s)
T
j
= 25 °C
T
j
= 125 °C
I
F
= 200 A
T
j
= 125 °C
di/dt
off
= 5350 A/µs T = 125 °C
j
V
GE
= -15 V
T
j
= 125 °C
V
CC
= 600 V
per diode
per diode
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
R
th(j-s)
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
w
Temperature sensor
R
100
B
100/125
T
c
=100°C (R
25
=5 kΩ)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)];
T[K];
0,493
±5%
3550
±2%
kΩ
K
res., terminal-chip
per module
to heat sink (M5)
to terminals (M6)
3
2.5
T
C
= 25 °C
T
C
= 125 °C
18
0.7
1
0.045
5
5
250
nH
mΩ
mΩ
K/W
Nm
Nm
Nm
g
T
j
= 25 °C
T
j
= 125 °C
I
F
= 200 A
T
j
= 125 °C
di/dt
off
= 5320 A/µs T = 125 °C
j
V
GE
= -15 V
T
j
= 125 °C
V
CC
= 600 V
per diode
per diode
0.75
0.5
3.8
4.0
2.0
1.8
1.1
0.85
4.5
4.8
240
31
11
0.15
2.5
2.3
1.45
1.2
5.3
5.5
0.75
0.5
3.8
4.0
2.0
1.8
1.1
0.85
4.5
4.8
240
31
11
0.15
2.5
2.3
1.45
1.2
5.3
5.5
Conditions
V
CC
= 600 V
I
C
= 200 A
T
j
= 125 °C
R
G on
= 3
Ω
R
G off
= 3
Ω
min.
typ.
230
55
20
585
90
21
max.
Unit
ns
ns
mJ
ns
ns
mJ
0.083
K/W
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
K/W
SEMiX
®
2s
SPT IGBT Modules
SEMiX352GAR128Ds
R
th(j-s)
Inverse diode
V
F
= V
EC
I
F
= 200 A
V
GE
= 0 V
chiplevel
V
F0
Preliminary Data
Features
• Homogeneous Si
• SPT = Soft-Punch-Through technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic welders up to 20 kHz
Freewheeling diode
V
F
= V
EC
I
F
= 200 A
V
GE
= 0 V
chiplevel
V
F0
GAR
2
Rev. 8 – 02.12.2008
© by SEMIKRON
SEMiX352GAR128Ds
Fig. 1 Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2 Rated current vs. temperature I
C
= f (T
C
)
Fig. 3 Typ. turn-on /-off energy = f (I
C
)
Fig. 4 Typ. turn-on /-off energy = f (R
G
)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
© by SEMIKRON
Rev. 8 – 02.12.2008
3
SEMiX352GAR128Ds
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Typ. transient thermal impedance
Fig. 10 Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode recovery charge
4
Rev. 8 – 02.12.2008
© by SEMIKRON
SEMiX352GAR128Ds
SEMiX 2s
GAR
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 8 – 02.12.2008
5
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