SEMiX302GAR12E4s
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 3xI
Cnom
V
CC
= 800 V
V
GE
≤
20 V
V
CES
≤
1200 V
V
GES
t
psc
T
j
Inverse diode
I
F
SEMiX302GAR12E4s
Conditions
Values
1200
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
463
356
300
900
-20 ... 20
SEMiX 2s
Trench IGBT Modules
®
T
j
= 150 °C
10
-40 ... 175
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
356
266
300
900
1620
-40 ... 175
I
Fnom
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
I
FRM
I
FSM
T
j
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
Freewheeling diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
AC sinus 50Hz, t = 1 min
600
-40 ... 125
4000
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
T
j
= 175 °C
T
c
= 25 °C
T
c
= 80 °C
356
266
300
900
1620
-40 ... 175
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• Dynamic values apply to the
following combination of resistors:
R
Gon,main
= 0,5
Ω
R
Goff,main
= 0,5
Ω
R
G,X
= 2,2
Ω
R
E,X
= 0,5
Ω
Characteristics
Symbol
IGBT
V
CE(sat)
V
CE0
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
I
C
= 300 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
GE
= 15 V
T
j
= 25 °C
T
j
= 150 °C
5
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
18.6
1.16
1.02
1700
2.50
1.8
2.2
0.8
0.7
3.3
5.0
5.8
0.1
2.05
2.4
0.9
0.8
3.8
5.3
6.5
0.3
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
Conditions
min.
typ.
max.
Unit
V
GE
=V
CE
, I
C
= 12 mA
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
GAR
© by SEMIKRON
Rev. 1 – 20.02.2009
1
SEMiX302GAR12E4s
Characteristics
Symbol
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-c)
Conditions
V
CC
= 600 V
I
C
= 300 A
T
j
= 150 °C
T
j
= 150 °C
min.
typ.
282
60
30
564
117
44
max.
Unit
ns
ns
mJ
ns
ns
mJ
T
j
= 150 °C
R
G on
= 1.9
Ω
T
j
= 150 °C
R
G off
= 1.9
Ω
di/dt
on
= 5000 A/µs T
j
= 150 °C
di/dt
off
= 2800 A/µs T
j
= 150 °C
per IGBT
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
I
F
= 300 A
T
j
= 150 °C
di/dt
off
= 4300 A/µs T = 150 °C
j
V
GE
= -15 V
T
j
= 150 °C
V
CC
= 600 V
per diode
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
I
F
= 300 A
T
j
= 150 °C
di/dt
off
= 4300 A/µs T = 150 °C
j
V
GE
= -15 V
T
j
= 150 °C
V
CC
= 600 V
per diode
1.1
0.7
2.2
3.3
1.1
0.7
2.2
3.3
0.096
2.1
2.1
1.3
0.9
2.8
3.9
230
50
19
0.17
2.1
2.1
1.3
0.9
2.8
3.9
230
50
19
0.17
18
2.5
2.4
1.5
1.1
3.2
4.3
2.46
2.4
1.5
1.1
3.2
4.3
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
nH
mΩ
mΩ
K/W
SEMiX
®
2s
Trench IGBT Modules
SEMiX302GAR12E4s
Inverse diode
V
F
= V
EC
I
F
= 300 A
V
GE
= 0 V
chip
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
CE(sat)
with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
Freewheeling diode
V
F
= V
EC
I
F
= 300 A
V
GE
= 0 V
chip
V
F0
r
F
I
RRM
Q
rr
E
rr
R
th(j-c)
Module
L
CE
R
CC'+EE'
R
th(c-s)
M
s
M
t
w
Temperatur Sensor
R
100
B
100/125
res., terminal-chip
per module
to heat sink (M5)
Remarks
• Case temperature limited to T
C
=125°C
max.
• Product reliability results are valid for
T
j
=150°C
• Dynamic values apply to the
following combination of resistors:
R
Gon,main
= 0,5
Ω
R
Goff,main
= 0,5
Ω
R
G,X
= 2,2
Ω
R
E,X
= 0,5
Ω
T
C
= 25 °C
T
C
= 125 °C
3
to terminals (M6)
2.5
0.7
1
0.045
5
5
250
Nm
Nm
Nm
g
Ω
K
T
c
=100°C (R
25
=5 kΩ)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)];
T[K];
493 ± 5%
3550
±2%
GAR
2
Rev. 1 – 20.02.2009
© by SEMIKRON
SEMiX302GAR12E4s
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Rated current vs. temperature I
C
= f (T
C
)
Fig. 3: Typ. turn-on /-off energy = f (I
C
)
Fig. 4: Typ. turn-on /-off energy = f (R
G
)
Fig. 5: Typ. transfer characteristic
Fig. 6: Typ. gate charge characteristic
© by SEMIKRON
Rev. 1 – 20.02.2009
3
SEMiX302GAR12E4s
Fig. 7: Typ. switching times vs. I
C
Fig. 8: Typ. switching times vs. gate resistor R
G
Fig. 9: Typ. transient thermal impedance
Fig. 10: Typ. CAL diode forward charact., incl. R
CC'+EE'
Fig. 11: Typ. CAL diode peak reverse recovery current
Fig. 12: Typ. CAL diode recovery charge
4
Rev. 1 – 20.02.2009
© by SEMIKRON
SEMiX302GAR12E4s
SEMiX 2s
GAR
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied
is made regarding delivery, performance or suitability.
© by SEMIKRON
Rev. 1 – 20.02.2009
5
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