SE7265L
2.3-2.7 GHz WiMAX Power Amplifier
Preliminary
Applications
IEEE802.16e WiMAX
TM
Mobile WiMAX datacards, modules and terminals
Product Description
The SE7265L WiMAX Power Amplifier is a high
performance device offering high output power with
high linearity and exceptional efficiency. Designed for
portable or mobile applications in the 2.3-2.7 GHz
band, it supports the IEEE 802.16e wireless
standards.
Features
2.3-2.7 GHz operation
25 dBm Linear output power, at 3.3V
37 dB gain
Integrated Step Attenuator and output power
detector
All RF ports matched for 50
Ω
operation
Supply voltage: 2.9 V – 4.2 V
Lead free, Halogen free, ROHS compliant
package (4 mm x 4 mm x 0.9 mm), MSL 1
.
Ordering Information
Part No.
SE7265L
SE7265L-R
SE7265L-EK1
Package
16 pin QFN
16 pin QFN
N/A
Remark
Samples
Tape and Reel
Evaluation kit
Functional Block Diagram
V
DD1
TEMP
V
DD2
V
DD3
Temp
Sensor
RF in
RF out
Bias and Control
Power
Det
V
REF
V
ATTN
V
DET
Figure 1: Functional Block Diagram
DST-00218 Rev 1.5 July-10-2009
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SE7265L
2.3-2.7 GHz WiMAX Power Amplifier
Preliminary
http://www.sige.com
Email:
sales@sige.com
Customer Service Locations:
North America:
1050 Morrison Drive, Suite 100
Ottawa ON K2H 8K7 Canada
Phone: +1 613 820 9244
Fax: +1 613 820 4933
Hong Kong
Phone: +852 3428 7222
Fax: +852 3579 5450
San Diego
Phone: +1 858 668 3541 (ext. 226)
Fax: +1 858 668 3546
United Kingdom
Phone: +44 1279 464217
Fax: +44 1279 464201
Product Preview
The datasheet contains information from the product concept specification. SiGe Semiconductor, Inc. reserves the right to change
information at any time without notification.
Preliminary Information
The datasheet contains information from the design target specification. SiGe Semiconductor, Inc. reserves the right to change
information at any time without notification.
Production testing may not include testing of all parameters.
Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor, Inc. assumes
no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or
other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any
patent or other intellectual property rights of SiGe Semiconductor, Inc. or third parties. Specifications mentioned in this publication
are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe
Semiconductor, Inc. products are NOT authorized for use in implantation or life support applications or systems without express
written approval from SiGe Semiconductor, Inc.
Copyright 2009 SiGe Semiconductor, Inc.
All Rights Reserved
DST-00218 Rev 1.5 July-10-2009
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