Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Isolated mounting tab
BY329X-1500, BY329X-1500S
SYMBOL
QUICK REFERENCE DATA
V
R
= 1500 V
V
F
≤
1.35 V / 1.5 V
I
F(peak)
= 6 A (f = 16 kHz)
I
F(peak)
= 6 A (f = 70 kHz)
I
FSM
≤
75 A
t
rr
≤
230 ns / 160 ns
k
1
a
2
GENERAL DESCRIPTION
Glass-passivated double diffused
rectifier diode featuring low forward
voltage drop, fast reverse recovery
and soft recovery characteristic.
The device is intended for use in TV
receivers and PC monitors.
The BY329X series is supplied in
the conventional leaded SOD113
package.
PINNING
PIN
1
2
tab
DESCRIPTION
anode
cathode
isolated
SOD113
case
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
V
RSM
V
RRM
V
RWM
I
F(peak)
I
FRM
I
F(RMS)
I
FSM
T
stg
T
j
Peak non-repetitive reverse
voltage
Peak repetitive reverse
voltage
Crest working reverse voltage
BY329X
Peak working forward current
Peak repetitive forward
current
RMS forward current
Peak non-repetitive forward
current
Storage temperature
Operating junction
temperature
f = 16 kHz
f = 70 kHz
t = 25
µs; δ
= 0.5; T
hs
≤
86 ˚C
t = 10 ms
sinusoidal; T
j
= 150 ˚C prior to
surge; with reapplied V
RWM(max)
-
-
-
-
-
-40
-
CONDITIONS
MIN.
-
-
-
MAX.
1500
1500
1300
-1500
6
-
14
11
75
150
150
-1500S
-
6
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
September 1998
1
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
R.M.S. isolation voltage from
both terminals to external
heatsink
CONDITIONS
BY329X-1500, BY329X-1500S
MIN.
-
TYP.
MAX.
2500
UNIT
V
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
C
isol
Capacitance from both terminals f = 1 MHz
to external heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air.
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.8
5.9
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER
V
F
I
R
Forward voltage
Reverse current
CONDITIONS
I
F
= 6.5 A
I
F
= 6.5 A; T
j
= 125 ˚C
V
R
= 1300 V
V
R
= 1300 V; T
j
= 125 ˚C
TYP.
1.1
1.05
-
-
1.3
1.2
250
1
MAX.
1.45
1.35
-
-
1.6
1.5
250
1
UNIT
V
V
µA
mA
BY329X- 1500 1500S 1500 1500S
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER
t
rr
Q
s
V
fr
t
fr
Reverse recovery time
Reverse recovery charge
Peak forward recovery voltage
Forward recovery time
CONDITIONS
I
F
= 1 A; V
R
≥
30 V;
dI
F
/dt = 50A/µs
I
F
= 2 A; -dI
F
/dt = 20 A/µs
I
F
= 6.5A; dI
F
/dt = 50A/µs
I
F
= 6.5A; dI
F
/dt = 50A/µs
TYP.
BY329X 1500 1500S
0.18
1.6
17
210
0.13
0.7
23
220
MAX.
1500
0.23
2.0
30
300
1500S
0.16
0.95
40
320
µs
µC
V
ns
UNIT
September 1998
2
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY329X-1500, BY329X-1500S
I
F
100
Maximum pulse width / us
V
BY459X-1500
VRRM
10%
tfr
VF
V
VF
5V
time
fr
1
10
pulse
width tp
time
period T
time
10
100
line frequency / kHz
Fig.1. Definition of Vfr and tfr
Fig.4. Maximum allowable pulse width t
p
versus line
frequency; Basic horizontal deflection circuit.
I
dI
F
dt
F
30
IF / A
Tj = 125 C
Tj = 25 C
BY32915
trr
time
20
Qs
25%
100%
10
typ
I
R
0
0
0.5
1
max
1.5
VF / V
2
Fig.2. Definition of t
rr
and Q
s
Fig.5. BY329-1500 Typical and maximum forward
characteristic I
F
= f(V
F
); parameter T
j
IF / A
30
Tj = 125 C
Tj = 25 C
VCC
BY32915S
Line output transformer
LY
20
10
typ
Cf
deflection transistor
D1
Cs
max
0
0
0.5
1
1.5
VF / V
2
Fig.3. Basic horizontal deflection circuit.
Fig.6. BY329-1500S Typical and maximum forward
characteristic I
F
= f(V
F
); parameter T
j
September 1998
3
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY329X-1500, BY329X-1500S
10
Transient thermal impedance, Zth j-hs (K/W)
1
0.1
0.01
P
D
t
p
D=
t
p
T
t
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BY229F
10s
Fig.7. Transient thermal impedance Z
th
= f(t
p
)
September 1998
4
Rev 1.100
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
3.2
3.0
10.3
max
BY329X-1500, BY329X-1500S
4.6
max
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
19
max. max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
M
2
1.0 (2x)
0.6
2.54
5.08
0.5
2.5
0.9
0.7
Fig.8. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
5
Rev 1.100
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