电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

CD4741AE3

产品描述Zener Diode, 11V V(Z), 5%, 1W, Silicon, Unidirectional, DIE-2
产品类别分立半导体    二极管   
文件大小127KB,共2页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 全文预览

CD4741AE3概述

Zener Diode, 11V V(Z), 5%, 1W, Silicon, Unidirectional, DIE-2

CD4741AE3规格参数

参数名称属性值
厂商名称Microsemi
包装说明S-XXUC-N2
Reach Compliance Codecompliant
ECCN代码EAR99
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JESD-30 代码S-XXUC-N2
元件数量1
端子数量2
封装主体材料UNSPECIFIED
封装形状SQUARE
封装形式UNCASED CHIP
极性UNIDIRECTIONAL
最大功率耗散1 W
标称参考电压11 V
表面贴装YES
技术ZENER
端子形式NO LEAD
端子位置UNSPECIFIED
最大电压容差5%
工作测试电流23 mA

文档预览

下载PDF文档
• ZENER DIODE CHIPS
• ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
• ELECTRICALLY EQUIVALENT TO 1N4728A THRU 1N4764A
• 1 WATT CAPABILITY WITH PROPER HEAT SINKING
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
CD4728A
thru
CD4764A
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Forward Voltage @ 200 mA: 1.5 Volts Maximum
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise speci½ed
NOMINAL
ZENER
VOLTAGE
(VZ)
(Note 1)
VOLTS
CD4728A
CD4729A
CD4730A
CD4731A
CD4732A
CD4733A
CD4734A
CD4735A
CD4736A
CD4737A
CD4738A
CD4739A
CD4740A
CD4741A
CD4742A
CD4743A
CD4744A
CD4745A
CD4746A
CD4747A
CD4748A
CD4749A
CD4750A
CD4751A
CD4752A
CD4753A
CD4754A
CD4755A
CD4756A
CD4757A
CD4758A
CD4759A
CD4760A
CD4761A
CD4762A
CD4763A
CD4764A
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
MAXIMUM
ZENER
IMPEDANCE
(ZZT @ lZT)
(Note 2)
OHMS
10
10
9
9
8
7
5
2
3.5
4.0
4.5
5.0
7
8
9
10
14
16
20
22
23
25
35
40
45
50
60
70
80
95
110
125
150
175
200
250
350
MAXIMUM
REVERSE
CURRENT
(lR @ VR)
MAXIMUM
KNEE
IMPEDANCE
(ZZK )
(Note 2)
OHMS
400
400
400
400
500
550
600
700
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
23 MILS
15 MILS
TYPE
NUMBER
TEST
CURRENT
(lZT)
mA
76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
29
17
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.7
3.3
3.0
2.8
2.5
TEST
VOLTAGE
(VR)
VOLTS
1
1
1
1
1
1
2
3
4
5
6
7
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
20.6
22.8
25.1
27.4
29.7
32.7
35.8
38.8
42.6
47.1
51.7
56.0
62.2
69.2
76.0
TEST
CURRENT
(lZK)
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
µ
A
100
100
100
10
10
5
5
5
3
3
3
3
3
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
BACKSIDE IS CATHODE
FIGURE 1
DESIGN DATA
METALLIZATION:
Top: (Anode)....................Al
Back: (Cathode)............. Au
AL THICKNESS......
.....25,000
Å
Min
GOLD THICKNESS........4,000
Å
Min
CHIP THICKNESS..................10
Mils
CIRCUIT LAYOUT DATA:
For Zener operation, cathode
must be operated positive
with respect to anode.
TOLERANCES:
ALL
Dimensions + 2 mils
NOTE 1
Zener voltage range equals nominal Zener voltage + 5% for “A” Suffix. No Suffix
denotes + 10%. Zener voltage is read using a pulse measurement, 10 milliseconds
maximum. "C" suffix = + 2% and "D" suffix = + 1%.
NOTE 2
Zener impedance is derived by superimposing on lZT A 60Hz rms a.c. current
equal to 10% of lZT.
6 LAKE STREET, LAWRENCE,
PHONE (978) 620-2600
WEBSITE: http://www.microsemi.com
M A S S A C H U S E T T S 01841
FAX (978) 689-0803
199
15 MILS
23 MILS

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 234  2380  2489  2828  1349  20  22  5  36  38 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved