J.Z111.U
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
...
fn
-
A
,
mV/lQl (SILICON)
thro
PLANED
r
-i
J
i i
A
I
_—
... r*
f
f"
i
|
K
MV2115
VOLTAGE-VARIABLE
CAPACITANCE DIODES
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Device Dissipation <e> T
A
- 25°C
Junction Temperature
Storage Temperature Range
Symbol
Vp
Ip
PQ
Tj
"'"stg
Value
30
200
230
+125
-G5 to + 150
Unit
Volts
rpA
mW
°C
"C
DIM
D--II-
"I
L
.!.
,0
•— J i—
STYLE 1.
PIN
ANODE
2. C A T H O D E
"c
'SECT A A
SECT. A A
( j
j )
MILLIMETERS
MIN
MAX
INCHES
MIN
MAX
D
J
K
0.41
2.25
.70
.48
.)9
12.70
O.IJS D.1S5
0.016 0.019
0,050 O.I 10
0-500
ELECTRICAL CHARACTERISTICS (T
A
• 25°C unless
otherwise noted)
ChMKUrlnfc-Aii Typ«
Rmm Breakdown VolUg*
II
R
- lOjiAdc)
Rmnt VolUgi Leakage Cumnl
<v
B
- 25 Vde, T
A
- »°ei
SwlH IMucunct
(1 - 250 MHl.L'M Lwnth
x
1/16")
GUI CtpKitinet
« - 1.0 MHi, Lead Linilh « 1/16")
Oiodl CapKltHKt Ttrnptrituri Cotlficim
(V
n
- 4.0 Vdc, f - 1.0 MHt)
Symbol
OV
R
Mix
.10
TYP
-
-
CO
O.IB
230
Mi«
Unil
Vrlc
'R
-
0.10
xAdc
nH
LS
c
c
TC
C
-
~
-
pF
100
(jpm/°C
.
V
n
'4.0 Vde, 1 - 1.0MHI
pF
(
'•
0. Piqtirc
ol
Mem
V,, - 4.U Vilt.
1
• -jOMHt
!
!
'
TH. Tuning njl»o
Cy/Cyg
1 -• I'.OMHi
D«vk«
MV210I
MV210Z
MV2103
MV2IO4
MV21OS
MV2106
MV2107
MV210S
MV2109
MV21IO
MV2111
MV2112
MV2113
MV2114
MV2115
Mm
G.I
Nam
M.1fi
7.S
9.0
n.o
132
:
,
;
'
Mm
.ISO
Mm
i
j
Typ
2.7
M.I.
7.4
0.0
108
13.5
16.2
G.B
8.2
10.0
12.0
15.0
18.0
22.0
27.0
33.0
39.0
47.0
56.0
68.0
82.0
"
ift 'j
<!'..()
400
.101)
.ion
,i'M
:i^o
:IOO
!
'
;
,
:
I'
•>
•>
.'
37
2.a
2.9
2.0
2.'J
j .-
j
|
!
'3 2
•j •;
'J
?
3.2
3 .'
's :'
3 ?
;»
19. U
:4.2
29.7
198
24.3
29.7
3S.1
42.3
353
.
'
!
-.'1X1
!
i
'
j
i
!
2-
?
•>,
:'
2.D
2.9
3.0
3.0
3.0
J2n
bl 7
G1.0
'
:
iso
IM)
ISO
ISO
l'«l
HH)
•>
2.1
X,
?i,
:MI
,'h
!
3.0
3.0
3.0
.1.0
3.0
?:.'.'
3.3
604
61 2
71. «
!K)^
I1U.O
goo
73.8
100.0
:: :i
.1 i
.: -i
PARAMETER TEST METHODS
1. Us. SERIES INDUCTANCE
LS !l muund on I Ihortld pKkigt It 250 .MHi uiing an
\metOtna
bridgi IBoonton Ridio Modil 2SOA RX Mutil.
i
Cc. CASE CAPACITANCE
brWn (Boonwo i
igiM 1.0
MHiu>ing >up
<M 7SA or
«qulv«l.nil
0. O. FIGURE OF MERIT
Q is calculated by taking ihe G and C readings of an admittance
bridge at the specified frequency and substituting in the following
equations:
2nfC
«,._..
lUoonton Electronics Model 33AS8I. Use Uo.1 UngtH »:1/16".
G. TCc. DIODE CAPACITANCE TEMPERATURE COEFFICIENT
TCc is guaranteed by comparing Cj at Vp f 4.0 Vdc. f •* 1.0
MHi.
T
A
- -6S°C with CT «l
Vn '
4.0 Vdc. 1-1.0 MHi. T
A
-
>8!i
0
C in the following equation vnhich defines TC£:
TC
C
-
Cjl+BS^CI - C
T
I-65°CI ' IOC __
— -
jj + j-j-
' CB(2S«>CI
1 CT. DIOOE CATACITANCC
(CT - Cc * Cj). CT « nwwnd « 1.0 MHi
uilng i cip
grMfi
IBoenlon EUcvonla Mod»l
7BA
or
iquKuiini).
4. TN. TUNIN4 DATIO
'
TM bUKrt«a*<CT miMuitd •<2.0 Vdc dlvktod by CT mMurtd
(I M
Vd>.
Accur.icy limned by measurement of Cj to I 0.1 pfv
Quality Semi-Conductors
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
