Bulletin I27182 08/06
EMP30P06D
PIM+
EMP Features:
Power Module:
•
•
NPT IGBTs 30A, 600V
10us Short Circuit capability
Square RBSOA
Low Vce
(on)
(2.05Vtyp @ 30A, 25°C)
Positive Vce
(on)
temperature coefficient
Gen III HexFred Technology
Low diode V
F
(1.34Vtyp @ 30A, 25°C)
Soft reverse recovery
5mΩ sensing resistors on all phase outputs and
DCbus minus rail
Thermal coefficient < 50ppm/°C
Package:
•
•
EMP – Bridge Brake inverter (EconoPack 2 outline compatible)
Power Module schematic:
DC+
OUT
DC+
IN
DC+ (signal)
Description
The EMP30P06D is a Power Integrated Module for Motor
Driver applications with embedded sensing resistors on all
three-phase output currents.
Each sensing resistor’s head is directly bonded to an
external pin to reduce parasitic effects and achieve high
accuracy on feedback voltages.
Since their thermal coefficient is very low, no value
compensation is required across the complete operating
temperature range.
The device comes in the EMP package, fully compatible in
length, width and height with EconoPack 2 outline.
TM
IN1
IN2
IN3
BRK
Out 1
Out 2
Out 3
DC-
DC- (signal)
Three phase bridge brake inverter with current sensing
resistors on all output phases and thermistor
Power module frame pins mapping
DC OUT+
DC IN+
IN1
OUT1
IN2
OUT2
IN3
OUT3
DC IN-
BRK
www.irf.com
1
EMP30P06D
I27182 08/06
Pins mapping
Symbol
IN1/2/3
DC OUT+
DC IN+
DC IN-
DC +
DC -
BRK
Brk
Th +
Th -
G1/2/3
E1/2/3
Gb
Eb
R1/2/3 +
R1/2/3 -
G4/5/6
E4/5/6
OUT1/2/3
Lead Description
Diode Bridge power input pins
DC Bus plus power output pin
DC Bus plus power input pin
DC Bus minus power input pin
DC Bus plus signal connection (Kelvin point)
DC Bus minus signal connections (Kelvin points)
Brake power output pin
Brake signal connection (Kelvin point)
Thermal sensor positive input
Thermal sensor negative input
Gate connections for high side IGBTs
Emitter connections for high side IGBTs (Kelvin points)
Gate connection for brake IGBT (Kelvin point)
Emitter connection for brake IGBT (Kelvin point)
Output current sensing resistor positive input (IGBTs emitters 1/2/3 side, Kelvin points)
Output current sensing resistor negative input (Motor side, Kelvin points)
Gate connections for low side IGBTs
Emitter connections for low side IGBTs (Kelvin points)
Three phase power output pins
General Description
The EMP module contains six IGBTs and HexFreds
Diodes in a standard inverter configuration. IGBTs used
are the new NPT 600V-30A (current rating measured at
80C°), generation V from International Rectifier; the
HexFred diodes have been designed specifically as pair
elements for these power transistors. Thanks to the new
design and technological realization, these devices do not
need any negative gate voltage for their complete turn off;
moreover the tail effect is also substantially reduced
compared to competitive devices of the same family. This
feature tremendously simplifies the gate driving stage.
Another innovative feature in this type of power modules is
the presence of sensing resistors in the three output
phases, for precise motor current sensing and short circuit
protections, as well as another resistor of the same value
in the DC bus minus line, needed only for device
protections purposes. A complete schematic of the EMP
module is shown on page 1 where all sensing resistors
have been clearly evidenced, a thermal sensor with
negative temperature coefficient is also embedded in the
device structure.
The package chosen is mechanically compatible with the
well known EconoPack outline, Also the height of the
plastic cylindrical nuts for the external PCB positioned on
its top is the same as the EconoPack II, so that, with the
only re-layout of the main motherboard, this module can fit
into the same mechanical fixings of the standard
EconoPack II package thus speeding up the device
evaluation in an already existing driver. An important
feature of this new device is the presence of Kelvin
connections for all feedback and command signals
between the board and the module with the advantage of
having all emitter and resistor sensing independent from
the main power path. The final benefit is that all low power
signal from/to the controlling board are unaffected by
parasitic inductances or resistances inevitably present in
the module power layout. The new package outline is
shown on bottom of page 1. Notice that because of high
current spikes on those inputs the DC bus power pins are
doubled in size compared to the other power pins. Module
technology uses the standard and well know DBC (Direct
Bondable Copper): over a thick Copper base an allumina
(Al
2
O
3
) substrate with a 300µm copper foil on both side is
placed and IGBTs and Diodes dies are directly soldered,
through screen printing process. These dies are then
bonded with a 15 mils aluminum wire for power and signal
connections. All components are then completely covered
by a silicone gel for mechanical protection and electrical
isolation purposes.
www.irf.com
2
EMP30P06D
I27182 08/06
Absolute Maximum Ratings (T
C
=25ºC)
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
All voltage parameters are absolute voltages referenced to V
DC-
, all currents are defined positive into any lead.
Thermal Resistance and Power Dissipation ratings are measured at still air conditions.
Symbol
V
DC
V
CES
I
C @ 100°C
I
C @ 80°C
I
C @ 25°C
Inverter and
Brake
I
CM
I
F @ 100°C
I
F @ 25°C
I
FM
V
GE
P
D @ 25°C
P
D @ 100°C
V
RRM
V
RSM
I
o
Bridge
I
FSM
DC Bus Voltage
Collector Emitter Voltage
IGBTs continuous collector current (T
C
= 100 ºC, fig. 1)
IGBTs continuous collector current (T
C
= 80 ºC,fig 1)
IGBTs continuous collector current (T
C
= 25 ºC,fig 1)
Pulsed Collector Current (Fig. 3, Fig. CT.5)
Diode Continuous Forward Current (T
C
= 100 ºC)
Diode Continuous Forward Current (T
C
= 25 ºC)
Diode Maximum Forward Current
Gate to Emitter Voltage
Power Dissipation (One transistor)
Power Dissipation (One transistor, T
C
= 100 ºC)
repetitive peak reverse voltage (T
j
= 150 ºC)
non repetitive peak reverse voltage
Diode Continuous Forward Current (T
C
= 100 ºC, 120º Rect conduction angle)
One-cycle forward. Non-repetitive on state
surge current (t=10ms, Initial T
j
=150°C)
Current I
2
t for fusing (t=10ms, Initial T
j
=150°C)
100% V
RRM
reapplied
No voltage reapplied
100% V
RRM
reapplied
No voltage reapplied
-20
Parameter Definition
Min.
0
0
Max.
500
600
25
30
45
90
25
45
90
+20
138
55
1400
1500
45
225
270
253
365
3650
3.5
-40
-40
-2500
+150
+125
+2500
A
2
s
A
2
√s
Nm
ºC
V
A
V
W
A
Units
V
V
I
2
t
I
2
√t
MT
Power
Module
T
J
T
STG
Vc-iso
Current I
2
√t
for fusing (t=0.1 to 10ms, no voltage reapplied, Initial T
j
= 150°C)
Mounting Torque
Operating Junction Temperature
Storage Temperature Range
Isolation Voltage to Base Copper Plate
www.irf.com
3
EMP30P06D
I27182 08/06
Electrical Characteristics: Inverter and Brake
For proper operation the device should be used within the recommended conditions.
T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)CES
∆V
(BR)CES /
∆
T
Parameter Definition
Collector To Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Min.
600
0.67
1.91
V
CE(on)
Collector To Emitter Saturation Voltage
2.46
2.19
V
GE(th)
∆V
GE(th) /
∆
Tj
g
fe
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Trasconductance
4
4.46
-10
18
250
I
CES
Zero Gate Voltage Collector Current
368
580
2000
V
FM
I
GES
R1/2/3
Diode Forward Voltage Drop
Gate To Emitter Leakage Current
Sensing Resistors
4.95
5
1.29
1.25
1.48
1.5
±100
5.05
V
nA
mΩ
µA
2.2
2.87
2.55
5
V
mV/ºC
S
V
Typ.
Max.
Units
V
V/ºC
Test Conditions
V
GE
= 0V, I
C
= 250µA
V
GE
= 0V, I
C
= 1mA (25 - 125 ºC)
I
C
= 25A, V
GE
= 15V
I
C
= 45A, V
GE
= 15V
I
C
= 25A, V
GE
= 15V, T
J
= 125 ºC
V
CE
= V
GE
, I
C
= 250µA
V
CE
= V
GE
, I
C
= 1mA (25 – 125 ºC)
V
CE
= 50V, I
C
= 30A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 125 ºC
V
GE
= 0V, V
CE
= 600V, T
J
= 150 ºC
I
C
= 25A
I
C
= 25A, T
J
= 125 ºC
V
GE
=± 20V
8
5, 6
7, 9
10, 11
12
Fig.
Electrical Characteristics: Bridge
For proper operation the device should be used within the recommended conditions.
T
J
= 25°C (unless otherwise specified)
Symbol
V
FM
V
F(TO)
I
rm
Parameter Definition
Forward Voltage Drop
Threshold voltage
Reverse Leakage Current
0.78
5
Min.
Typ.
Max.
1.45
Units
V
V
mA
Test Conditions
t
p
= 400µs, I
pk
= 45A
T
J
= 125 ºC
T
J
= 125 ºC
V
R
= 1200V
Fig.
24
www.irf.com
4
EMP30P06D
I27182 08/06
Switching Characteristics: Inverter and Brake
For proper operation the device should be used within the recommended conditions.
T
J
= 25°C (unless otherwise specified)
Symbol
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
E
on
E
off
E
tot
td (on)
Tr
td (off)
Tf
C
ies
C
oes
C
res
RBSOA
Parameter Definition
Total Gate Charge (turn on)
Gate – Emitter Charge (turn on)
Gate – Collector Charge (turn on)
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Turn on Switching Loss
Turn off Switching Loss
Total Switching Loss
Turn on delay time
Rise time
Turn off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Min
Typ
102
14
44
0.469
0.338
0.807
0.631
0.604
1.235
101
25
130
105
1750
160
60
FULL SQUARE
pF
Max
153
21
66
0.779
0.507
1.281
0.946
0.906
1.852
152
38
195
156
ns
V
GE
= 15V, R
G
=10Ω, L = 800µH
V
CC
= 30V
V
GE
= 0V
f = 1MHz
T
J
= 150 ºC, I
C
=90A, V
GE
= 15V to 0V
V
CC
= 500V, V
p
= 600V, R
G
= 10Ω
µs
925
77
62
0.806
1.06
0.03
23
Pdiss
Total Dissipated Power
40
61
95
W
93
0.9
1.22
1165
µJ
ns
A
ºC/W
ºC/W
ºC/W
I
C
= 3.3A, V
DC
= 300V, fsw = 8kHz, T
C
= 55 ºC
I
C
= 6A, V
DC
= 300V, fsw = 8kHz, T
C
= 55 ºC
I
C
= 6A, V
DC
= 300V, fsw = 16kHz T
C
= 55 ºC,
I
C
= 14A, V
DC
= 300V, fsw = 4kHz, T
C
= 55ºC
PD1
PD2
PD3
See also fig. 25 and 26
T
J
= 150 ºC, V
GE
= 15V to 0V
V
CC
= 360V, Vp= 600V, R
G
= 10Ω
T
J
= 125 ºC
I
F
= 30A, V
CC
= 400V,
V
GE
= 15V, R
G
=10Ω, L = 800µH
4
CT2
CT3
WF4
17,18
19,20
21
CT4
WF3
22
mJ
mJ
nC
Units
I
C
= 30A
V
CC
= 400V
V
GE
= 15V
I
C
= 30A, V
CC
= 400V, T
J
= 25 ºC
V
GE
= 15V, R
G
=10Ω, L = 800µH
Tail and Diode Rev. Recovery included
I
C
= 30A, V
CC
= 400V, T
J
= 125 ºC
V
GE
= 15V, R
G
=10Ω, L = 800µH
Tail and Diode Rev. Recovery included
I
C
= 30A, V
CC
= 400V, T
J
= 125 ºC
CT4
WF1
WF2
13,
15
CT4
WF1
WF2
14,16
CT4
WF1
WF2
Test Conditions
Fig.
23
CT1
SCSOA
E
REC
Trr
Irr
Rth
J-C_T
Rth
J-C_D
Rth
C-H
Short Circuit Safe Operating Area
Diode reverse recovery energy
Diode reverse recovery time
Peak reverse recovery current
Each IGBT to copper plate thermal resistance
Each Diode to copper plate thermal resistance
Module copper plate to heat sink thermal
resistance. Silicon grease applied = 0.1mm
10
www.irf.com
5
电子竞赛
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
