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CD979AE3

产品描述Zener Diode, 56V V(Z), 10%, 0.5W, Silicon, Unidirectional, DIE-2
产品类别分立半导体    二极管   
文件大小126KB,共2页
制造商Microsemi
官网地址https://www.microsemi.com
下载文档 详细参数 全文预览

CD979AE3概述

Zener Diode, 56V V(Z), 10%, 0.5W, Silicon, Unidirectional, DIE-2

CD979AE3规格参数

参数名称属性值
厂商名称Microsemi
包装说明S-XXUC-N2
Reach Compliance Codecompliant
ECCN代码EAR99
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JESD-30 代码S-XXUC-N2
元件数量1
端子数量2
封装主体材料UNSPECIFIED
封装形状SQUARE
封装形式UNCASED CHIP
极性UNIDIRECTIONAL
最大功率耗散0.5 W
标称参考电压56 V
表面贴装YES
技术ZENER
端子形式NO LEAD
端子位置UNSPECIFIED
最大电压容差10%
工作测试电流2.2 mA

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• 1N962B THRU 1N986B AVAILABLE IN
JANHC AND JANKC
PER MIL-PRF-19500/117
• ZENER DIODE CHIPS
• 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING
• ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES,
WITH THE EXCEPTION OF SOLDER REFLOW
CD957B
thru
CD986B
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Forward Voltage @ 200mA: 1.5 volts maximum
23 MILS
15 MILS
ELECTRICAL CHARACTERISTICS @ 25°C
CDI
TYPE
NUMBER
(NOTE 1)
NOMINAL
ZENER
VOLTAGE
VZ
(NOTE 2)
VOLTS
CD957B
CD958B
CD959B
CD960B
CD961B
CD962B
CD963B
CD964B
CD965B
CD966B
CD967B
CD968B
CD969B
CD970B
CD971B
CD972B
CD973B
CD974B
CD975B
CD976B
CD977B
CD978B
CD979B
CD980B
CD981B
CD982B
CD983B
CD984B
CD985B
CD986B
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
mA
18.5
16.5
15.0
14.0
12.5
11.5
10.5
9.5
8.5
7.8
7.0
6.2
5.6
5.2
4.6
4.2
3.8
3.4
3.2
3.0
2.7
2.5
2.2
2.0
1.8
1.7
1.5
1.4
1.3
1.1
ZENER
TEST
CURRENT
l ZT
MAXIMUM ZENER IMPEDANCE
(NOTE 3)
ZZT @ l ZT
OHMS
4.5
5.5
6.5
7.5
8.5
9.5
11.5
13
16
17
21
25
29
33
41
49
58
70
90
93
105
125
150
185
230
270
330
400
500
750
ZZK @ l ZK
OHMS
700
700
700
700
700
700
700
700
700
700
750
750
750
750
750
1000
1000
1000
1000
1500
1500
1500
2000
2000
2000
2000
3000
3000
3000
4000
mA
1.0
.5
.5
.5
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
.25
mA
55
50
45
41
38
32
31
28
25
24
20
18
16
15
13
12
11
10
9.5
8.8
7.9
7.4
6.8
6.0
5.5
5.0
4.6
4.1
3.7
3.3
MAX. DC
ZENER
CURRENT
l ZM
MAX. REVERSE
LEAKAGE CURRENT
lR @ VR
Backside is Cathode
µ
A
5.0
5.0
5.0
5.0
2.0
1.0
1.0
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
VOLTS
5.2
5.7
6.2
6.9
7.6
8.4
9.1
9.9
11
12
14
15
17
18
21
23
25
27
30
33
36
39
43
47
52
56
62
69
76
84
FIGURE 1
DESIGN DATA
METALLIZATION:
Top: (Anode) .....................Al
Back: (Cathode) ...............Au
AL THICKNESS...........25,000
Å
Min
GOLD THICKNESS.
......4,000
Å
Min
CHIP THICKNESS.
................10 Mils
CIRCUIT LAYOUT DATA:
For Zener operation, cathode
must be operated positive
with respect to anode.
TOLERANCES:
ALL
Dimensions + 2 mils
NOTE 1
NOTE 2
NOTE 3
Zener voltage range equals nominal voltage + 5% for “B” Suffix. “A” Suffix denotes + 10%,
No Suffix denotes + 20%. "C" suffix = + 2% and "D" suffix = + 1%.
Zener voltage is read using a pulse measurement, 10 milliseconds maximum.
Zener impedance is derived by superimposing on 1ZT A 60Hz rms a.c. current equal
to 10% of 1ZT
6 LAKE STREET, LAWRENCE,
PHONE (978) 620-2600
WEBSITE: http://www.microsemi.com
M A S S A C H U S E T T S 01841
FAX (978) 689-0803
181
15 MILS
23 MILS

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