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CDLL4696E3/TR

产品描述Zener Diode,
产品类别分立半导体    二极管   
文件大小126KB,共2页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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CDLL4696E3/TR概述

Zener Diode,

CDLL4696E3/TR规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microsemi
Reach Compliance Codecompliant
二极管类型ZENER DIODE
峰值回流温度(摄氏度)NOT SPECIFIED
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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• 50
µ
A, LOW OPERATING CURRENT, ZENER DIODES
• LEADLESS PACKAGE FOR SURFACE MOUNT
• DOUBLE PLUG CONSTRUCTION
• METALLURGICALLY BONDED
CDLL4678
thru
CDLL4717
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature:
-65°C to +175°C
Power Dissipation:
500mW @ TEC +125°C
DC Power Derating: 10 mW / °C above TEC +125°C
Forward Voltage : 1.1 Volts maximum @ 200 mA
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise speci½ed.
CDI
TYPE
NUMBER
(Note 1)
VOLTS
CDLL4678
CDLL4679
CDLL4680
CDLL4681
CDLL4682
CDLL4683
CDLL4684
CDLL4685
CDLL4686
CDLL4687
CDLL4688
CDLL4689
CDLL4690
CDLL4691
CDLL4692
CDLL4693
CDLL4694
CDLL4695
CDLL4696
CDLL4697
CDLL4698
CDLL4699
CDLL4700
CDLL4701
CDLL4702
CDLL4703
CDLL4704
CDLL4705
CDLL4706
CDLL4707
CDLL4708
CDLL4709
CDLL4710
CDLL4711
CDLL4712
CDLL4713
CDLL4714
CDLL4715
CDLL4716
CDLL4717
1.8
2.0
2.2
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
8.7
9.1
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
19.0
20.0
22.0
24.0
25.0
27.0
28.0
30.0
33.0
36.0
39.0
43.0
NOMINAL
ZENER
VOLTAGE
VZ
ZENER
TEST
CURRENT
lZT
MAXIMUM
VOLTAGE
REGULATION
³VZ
(Note 2)
VOLTS
0.70
0.70
0.75
0.80
0.80
0.90
0.95
0.95
0.97
0.99
0.99
0.97
0.96
0.95
0.90
0.75
0.50
0.10
0.08
0.10
0.11
0.12
0.13
0.14
0.15
0.16
0.17
0.18
0.19
0.20
0.22
0.24
0.25
0.27
0.28
0.30
0.33
0.36
0.39
0.43
MAXIMUM REVERSE
LEAKAGE
CURRENT
lR @ VR
MAXIMUM
DC ZENER
CURRENT
lZM
mA
120.0
110.0
100.0
95.0
90.0
85.0
80.0
75.0
70.0
65.0
60.0
55.0
50.0
45.0
35.0
31.8
29.0
27.4
26.2
24.8
21.6
20.4
19.0
17.5
16.3
15.4
14.5
13.2
12.5
11.9
10.8
9.9
9.5
8.8
8.5
7.9
7.2
6.6
6.1
5.5
µ
A
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
µ
A
7.5
5.0
4.0
2.0
1.0
0.8
7.5
7.5
5.0
4.0
10.0
10.0
10.0
10.0
10.0
10.0
1.0
1.0
1.0
1.0
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.05
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
0.01
VOLTS
1.0
1.0
1.0
1.0
1.0
1.0
1.5
2.0
2.0
2.0
3.0
3.0
4.0
5.0
5.1
5.7
6.2
6.6
6.9
7.6
8.4
9.1
9.8
10.6
11.4
12.1
12.9
13.6
14.4
15.2
16.7
18.2
19.0
20.4
21.2
22.8
25.0
27.3
29.8
32.6
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
D
1.60
1.70 0.063 0.067
F
0.41
0.55 0.016 0.022
G
3.30
3.70 .130 .146
G1
2.54 REF.
.100 REF.
S
0.03 MIN.
.001 MIN.
FIGURE 1
DESIGN DATA
CASE:
DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
100
°
C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (Z
OJX): 35
°
C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
NOTE 1
All types are + 5% tolerance. VZ is measured with the Diode in thermal equilibrium
at 25°C + 3°C.
NOTE 2
VZ @ 100
µ
A minus VZ @ 10
µ
A.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600
FAX (978) 689-0803
WEBSITE: http://www.microsemi.com
125

 
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