IC 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, PLASTIC, SOT-97, DIP-8, Programmable ROM
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | NXP(恩智浦) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, |
| 针数 | 8 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 其他特性 | DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE |
| 最大时钟频率 (fCLK) | 0.1 MHz |
| 数据保留时间-最小值 | 40 |
| JESD-30 代码 | R-PDIP-T8 |
| 长度 | 9.5 mm |
| 内存密度 | 4096 bit |
| 内存集成电路类型 | EEPROM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 8 |
| 字数 | 512 words |
| 字数代码 | 512 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 512X8 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | DIP |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | SERIAL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 认证状态 | Not Qualified |
| 座面最大高度 | 4.2 mm |
| 串行总线类型 | I2C |
| 最大供电电压 (Vsup) | 6 V |
| 最小供电电压 (Vsup) | 2.5 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 7.62 mm |
| 最长写入周期时间 (tWC) | 10 ms |
| Base Number Matches | 1 |
| 935195510112 | 935191670112 | 935191710112 | 09VR1H25B1N502A3 | 09VR1H25B2C104A2 | 935182350112 | 935191710118 | 935195550118 | 935195550112 | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | IC 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, PLASTIC, SOT-97, DIP-8, Programmable ROM | IC 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, PLASTIC, SOT-97, DIP-8, Programmable ROM | 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 3.90 MM, PLASTIC, MS-012, SOT-96-1, SOP-8 | 9mm Panel Potentiometer | 9mm Panel Potentiometer | IC 1K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, PLASTIC, SOT-97, DIP-8, Programmable ROM | 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 3.90 MM, PLASTIC, MS-012, SOT-96-1, SOP-8 | IC 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, PLASTIC, SOT-96, SO-8, Programmable ROM | IC 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, PLASTIC, SOT-96, SO-8, Programmable ROM |
| 是否无铅 | 不含铅 | 不含铅 | 不含铅 | - | - | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | - | - | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | NXP(恩智浦) | NXP(恩智浦) | - | - | - | - | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) |
| 零件包装代码 | DIP | DIP | SOIC | - | - | DIP | SOIC | SOIC | SOIC |
| 包装说明 | DIP, | DIP, | SOP, | - | - | DIP, | SOP, | SOP, | SOP, |
| 针数 | 8 | 8 | 8 | - | - | 8 | 8 | 8 | 8 |
| Reach Compliance Code | unknown | unknown | unknown | - | - | compliant | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | - | - | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE | DATA RETENTION > 10 YEARS; WIRE I2C INTERFACE | DATA RETENTION > 10 YEARS; WIRE I2C INTERFACE | - | - | DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE | DATA RETENTION > 10 YEARS; WIRE I2C INTERFACE | DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE | DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE |
| 最大时钟频率 (fCLK) | 0.1 MHz | 0.1 MHz | 0.1 MHz | - | - | 0.1 MHz | 0.1 MHz | 0.1 MHz | 0.1 MHz |
| 数据保留时间-最小值 | 40 | 10 | 10 | - | - | 40 | 10 | 40 | 40 |
| JESD-30 代码 | R-PDIP-T8 | R-PDIP-T8 | R-PDSO-G8 | - | - | R-PDIP-T8 | R-PDSO-G8 | R-PDSO-G8 | R-PDSO-G8 |
| 长度 | 9.5 mm | 9.5 mm | 4.9 mm | - | - | 9.5 mm | 4.9 mm | 4.9 mm | 4.9 mm |
| 内存密度 | 4096 bit | 2048 bit | 2048 bit | - | - | 8192 bit | 2048 bit | 4096 bit | 4096 bit |
| 内存集成电路类型 | EEPROM | EEPROM | EEPROM | - | - | EEPROM | EEPROM | EEPROM | EEPROM |
| 内存宽度 | 8 | 8 | 8 | - | - | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | - | - | 1 | 1 | 1 | 1 |
| 端子数量 | 8 | 8 | 8 | - | - | 8 | 8 | 8 | 8 |
| 字数 | 512 words | 256 words | 256 words | - | - | 1024 words | 256 words | 512 words | 512 words |
| 字数代码 | 512 | 256 | 256 | - | - | 1000 | 256 | 512 | 512 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | - | - | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | - | - | 85 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C | - | - | -40 °C | -40 °C | -40 °C | -40 °C |
| 组织 | 512X8 | 256X8 | 256X8 | - | - | 1KX8 | 256X8 | 512X8 | 512X8 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | DIP | SOP | - | - | DIP | SOP | SOP | SOP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | SMALL OUTLINE | - | - | IN-LINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 并行/串行 | SERIAL | SERIAL | SERIAL | - | - | SERIAL | SERIAL | SERIAL | SERIAL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | 250 | 260 | - | - | 250 | 260 | 260 | 260 |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | - | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 4.2 mm | 4.2 mm | 1.75 mm | - | - | 4.2 mm | 1.75 mm | 1.75 mm | 1.75 mm |
| 串行总线类型 | I2C | I2C | I2C | - | - | I2C | I2C | I2C | I2C |
| 最大供电电压 (Vsup) | 6 V | 6 V | 6 V | - | - | 6 V | 6 V | 6 V | 6 V |
| 最小供电电压 (Vsup) | 2.5 V | 2.5 V | 2.5 V | - | - | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | - | - | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | NO | NO | YES | - | - | NO | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | - | - | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | - | - | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | GULL WING | - | - | THROUGH-HOLE | GULL WING | GULL WING | GULL WING |
| 端子节距 | 2.54 mm | 2.54 mm | 1.27 mm | - | - | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | - | - | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | 40 | 30 | - | - | 40 | 30 | 30 | 30 |
| 宽度 | 7.62 mm | 7.62 mm | 3.9 mm | - | - | 7.62 mm | 3.9 mm | 3.9 mm | 3.9 mm |
| 最长写入周期时间 (tWC) | 10 ms | 10 ms | 10 ms | - | - | 10 ms | 10 ms | 10 ms | 10 ms |
| JESD-609代码 | - | e4 | e4 | - | - | e4 | e4 | e4 | e4 |
| 端子面层 | - | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) |
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