74VHC20FT
CMOS Digital Integrated Circuits Silicon Monolithic
74VHC20FT
1. Functional Description
•
Dual 4-Input NAND Gate
2. General
The 74VHC20FT is an advanced high speed CMOS 4-INPUT NAND GATE fabricated with silicon gate C
2
MOS
technology.
It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS
low power dissipation.
The internal circuit is composed of 3 stages including a buffer output, which provide high noise immunity and
stable output.
An input protection circuit ensures that 0 to 5.5 V can be applied to the input pins without regard to the supply
voltage. This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up.
This circuit prevents device destruction due to mismatched supply and input voltages.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
AEC-Q100 (Rev. H) (Note 1)
Wide operating temperature: T
opr
= -40 to 125
High speed: t
pd
= 3.3 ns (typ.) at V
CC
= 5.0 V
Low power dissipation: I
CC
= 2.0
µA
(max) at T
a
= 25
High noise immunity: V
NIH
= V
NIL
= 28 % V
CC
(min)
Power down protection is provided on all inputs.
Balanced propagation delays: t
PLH
≈
t
PHL
Wide operating voltage range: V
CC(opr)
= 2.0 V to 5.5 V
(9) Pin and function compatible with the 74 series (AC/HC/AHC/LV etc.) 20 type.
Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales
representative.
4. Packaging
TSSOP14B
Start of commercial production
©2016 Toshiba Corporation
1
2014-12
2016-08-18
Rev.3.0
74VHC20FT
5. Pin Assignment
6. Marking
7. IEC Logic Symbol
©2016 Toshiba Corporation
2
2016-08-18
Rev.3.0
74VHC20FT
8. Truth Table
A
L
X
X
X
H
B
X
L
X
X
H
C
X
X
L
X
H
D
X
X
X
L
H
Y
H
H
H
H
L
X:
Don't Care
9. Absolute Maximum Ratings (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Input diode current
Output diode current
Output current
V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
(Note 1)
Note
Rating
-0.5 to 7.0
-0.5 to 7.0
-0.5 to V
CC
+ 0.5
-20
±20
±25
±50
180
-65 to 150
Unit
V
V
V
mA
mA
mA
mA
mW
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: 180 mW in the range of T
a
= -40 to 85
.
From T
a
= 85 to 125
a derating factor of -3.25 mW/ shall be
applied until 50 mW.
10. Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall times
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dv
V
CC
= 3.3
±
0.3 V
V
CC
= 5.0
±
0.5 V
Test Condition
Rating
2.0 to 5.5
0 to 5.5
0 to V
CC
-40 to 125
0 to 100
0 to 20
Unit
V
V
V
ns/V
Note:
The operating ranges are required to ensure the normal operation of the device. Unused inputs must be tied
to either V
CC
or GND.
©2016 Toshiba Corporation
3
2016-08-18
Rev.3.0
74VHC20FT
11. Electrical Characteristics
11.1. DC Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Symbol
V
IH
V
IL
V
OH
Test Condition
V
CC
(V)
2.0
3.0 to 5.5
2.0
3.0 to 5.5
V
IN
= V
IH
or V
IL
I
OH
= -50
µA
2.0
3.0
4.5
I
OH
= -4 mA
I
OH
= -8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
I
OL
= 50
µA
3.0
4.5
2.0
3.0
4.5
I
OL
= 4 mA
I
OL
= 8 mA
Input leakage current
Quiescent supply current
I
IN
I
CC
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
0 to 5.5
5.5
Min
1.50
V
CC
×
0.7
1.9
2.9
4.4
2.58
3.94
Typ.
2.0
3.0
4.5
0.0
0.0
0.0
Max
0.50
V
CC
×
0.3
0.1
0.1
0.1
0.36
0.36
±0.1
2.0
µA
µA
V
V
V
Unit
V
11.2. DC Characteristics (Unless otherwise specified, T
a
= -40 to 85
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Symbol
V
IH
V
IL
V
OH
Test Condition
V
CC
(V)
2.0
3.0 to 5.5
2.0
3.0 to 5.5
V
IN
= V
IH
or V
IL
I
OH
= -50
µA
2.0
3.0
4.5
I
OH
= -4 mA
I
OH
= -8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
I
OL
= 50
µA
3.0
4.5
2.0
3.0
4.5
I
OL
= 4 mA
I
OL
= 8 mA
Input leakage current
Quiescent supply current
I
IN
I
CC
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
0 to 5.5
5.5
Min
1.50
V
CC
×
0.7
1.9
2.9
4.4
2.48
3.80
Max
0.50
V
CC
×
0.3
0.1
0.1
0.1
0.44
0.44
±1.0
20.0
µA
µA
V
V
V
Unit
V
©2016 Toshiba Corporation
4
2016-08-18
Rev.3.0
74VHC20FT
11.3. DC Characteristics (Unless otherwise specified, T
a
= -40 to 125
)
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Symbol
V
IH
V
IL
V
OH
Test Condition
V
CC
(V)
2.0
3.0 to 5.5
2.0
3.0 to 5.5
V
IN
= V
IH
or V
IL
I
OH
= -50
µA
2.0
3.0
4.5
I
OH
= -4 mA
I
OH
= -8 mA
Low-level output voltage
V
OL
V
IN
= V
IH
I
OL
= 50
µA
3.0
4.5
2.0
3.0
4.5
I
OL
= 4 mA
I
OL
= 8 mA
Input leakage current
Quiescent supply current
I
IN
I
CC
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
0 to 5.5
5.5
Min
1.50
V
CC
×
0.7
1.9
2.9
4.4
2.40
3.70
Max
0.50
V
CC
×
0.3
0.1
0.1
0.1
0.55
0.55
±2.0
40.0
µA
µA
V
V
V
Unit
V
11.4. AC Characteristics (Unless otherwise specified, T
a
= 25
, Input: t
r
= t
f
= 3 ns)
Characteristics
Propagation delay time
Symbol
t
PLH
,t
PHL
Note
V
CC
(V)
3.3
±
0.3
5.0
±
0.5
Input capacitance
Power dissipation capacitance
C
IN
C
PD
(Note 1)
C
L
(pF)
15
50
15
50
Min
Typ.
4.6
7.1
3.3
4.8
4
19
Max
6.6
10.1
5.0
7.0
10
pF
pF
Unit
ns
Note 1: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current
consumption without load. Average operating current can be obtained by the equation.
I
CC(opr)
= C
PD
×
V
CC
×
f
IN
+ I
CC
/2 (per gate)
11.5. AC Characteristics
(Unless otherwise specified, T
a
= -40 to 85
, Input: t
r
= t
f
= 3 ns)
Characteristics
Propagation delay time
Symbol
t
PLH
,t
PHL
V
CC
(V)
3.3
±
0.3
5.0
±
0.5
Input capacitance
C
IN
C
L
(pF)
15
50
15
50
Min
1.0
1.0
1.0
1.0
Max
8.0
11.5
6.0
8.0
10
pF
Unit
ns
11.6. AC Characteristics
(Unless otherwise specified, T
a
= -40 to 125
, Input: t
r
= t
f
= 3 ns)
Characteristics
Propagation delay time
Symbol
t
PLH
,t
PHL
V
CC
(V)
3.3
±
0.3
5.0
±
0.5
Input capacitance
C
IN
C
L
(pF)
15
50
15
50
Min
1.0
1.0
1.0
1.0
Max
9.5
13.0
7.0
9.0
10
pF
Unit
ns
©2016 Toshiba Corporation
5
2016-08-18
Rev.3.0
单片机
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