PTFA041501GL
PTFA041501HL
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 420 – 500 MHz
Description
The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs
designed for ultra-linear CDMA power amplifier applications. They
are available in thermally-enhanced plastic open-cavity packages
with copper flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFA041501GL
Package PG-63248-2
PTFA041501HL
Package PG-64248-2
Single-carrier CDMA IS-95 Performance
V
DD
= 28 V, I
DQ
= 900 mA, ƒ = 470 MHz
Features
•
45
Thermally-enhanced plastic open-cavity (EPOC™)
packages with copper flanges, Pb-free and RoHS
compliant
Broadband internal matching
Typical CDMA performance at 470 MHz, 28 V
- Average output power = 60 W
- Linear Gain = 21 dB
- Efficiency = 41%
Typical CW performance, 470 MHz, 28 V
- Output power at P–1dB = 175 W
- Efficiency = 62%
Integrated ESD protection: Human Body Model,
Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
150 W (CW) output power
Adjacent Channel Power Ratio (dB)
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
36
38
40
42
44
46
48
•
•
Drain Efficiency (%)
–15°C
25°C
90°C
Efficiency
40
35
30
25
20
•
ACPR
ALT
15
10
5
0
•
•
•
•
Average Output Power (dBm)
RF Characteristics
Single-carrier CDMA IS-95 Measurements
(not subject to production test—verified by design/characterization in
Infineon test fixture)
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 60 W average, ƒ = 470 MHz
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
G
ps
Min
—
—
—
Typ
21
41
–33
Max
—
—
—
Unit
dB
%
dB
η
D
ACPR
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
*See Infineon distributor for future availability.
Rev. 02, 2008-11-21
PTFA041501GL
PTFA041501HL
Confidential, Limited Internal Distribution
RF Characteristics
(cont.)
Two-tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 900 mA, P
OUT
= 150 W PEP, ƒ = 470 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
Min
20.0
45.0
—
Typ
21.0
46.5
–29
Max
—
—
–28
Unit
dB
%
dBc
η
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 µA
V
DS
= 28 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 900 mA
V
GS
= 10 V, V
DS
= 0 V
Symbol
V
(BR)DSS
I
DSS
R
DS(on)
V
GS
I
GSS
Min
65
—
—
2
—
Typ
—
—
0.07
2.48
—
Max
—
1.0
—
3
1.0
Unit
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 150 W CW, soldered)
T
STG
R
θJC
Symbol
V
DSS
V
GS
T
J
P
D
Value
65
–0.5 to +12
200
625
3.57
–40 to +150
0.28
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
T
ype and Version
PTFA041501GL V1
PTFA041501HL V1
Package Outline Package Description
PG-63248-2
PG-64248-2
Thermally-enhanced slotted flange,
single-ended
Thermally-enhanced slotted flange,
single-ended
Shipping
Tray
Tray
Marking
PTFA041501GL
PTFA041501HL
*See Infineon distributor for future availability.
Data Sheet
2 of 11
Rev. 02, 2008-11-21
PTFA041501GL
PTFA041501HL
Confidential, Limited Internal Distribution
Typical Performance
(data taken in a production )
Broadband Circuit Performance
V
DD
= 28 V, I
DQ
= 900 mA, P1dB
50
45
-13
-14
P
OUT
, Gain & Efficiency (at P-1dB) vs. Frequency
V
DD
= 28 V, I
DQ
= 900 mA, P–1dB
65
60
20.9
20.8
20.7
Efficiency
Gain (dB), Efficiency (%)
Input Return Loss (dB)
40
35
-15
-16
Efficiency (%), P1dB
(dBm)
Efficiency
55
50
45
40
35
30
25
20
15
460
462
464
466
468
20.5
20.4
20.3
20.2
Return Loss
30
25
20
15
460
-17
Gain
-18
-19
-20
470
Gain
20.1
20
19.9
470
462
464
466
468
Frequency (MHz)
Frequency (MHz)
Power Sweep at selected I
DQ
V
DD
= 28 V, ƒ = 470 MHz
Power Sweep, CW Conditions
V
DD
= 28 V, I
DQ
= 900 mA, ƒ = 470 MHz
22.0
21.5
21.0
20.5
22
21
80
70
60
I
DQ
= 1125 mA
Gain (dB)
20
19
18
Gain (dB)
20.0
19.5
19.0
18.5
18.0
17.5
17.0
39
41
43
45
47
49
51
53
55
Gain
50
40
I
DQ
= 900 mA
I
DQ
= 675 mA
Efficiency
17
16
15
39
41
43
45
47
49
51
53
55
30
T
CASE
= 25°C
T
CASE
= 90°C
20
10
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 11
Rev. 02, 2008-11-21
Drain Efficiency (%)
Gain (dB)
P–1dB
20.6
PTFA041501GL
PTFA041501HL
Confidential, Limited Internal Distribution
Typical Performance
(cont.)
Intermodulation Distortion vs. Pout
V
DD
= 28 V, I
DQ
= 900 mA,
ƒ
1
= 469 MHz, ƒ
2
= 470 MHz
0
50
45
IM3 vs. Output Power at Selected Biases
V
DD
= 28 V , ƒ
1
= 469 MHz, ƒ
2
= 470 MHz
-25
-27
Intermodulation Distortion (dBc)
-10
-20
-30
-40
-50
-60
-70
36
38
40
42
44
46
48
50
Efficiency
IM3
IM5
IM7
40
35
30
25
20
15
10
Drain Efficiency (%)
-29
675 mA
IMD (dBc)
-31
-33
-35
-37
-39
-41
-43
36
38
40
42
44
46
48
50
900 mA
1125 mA
Output Power (dBm), avg.
Output Power (dBm)
Output Power (at 1 dB Compression)
vs. Supply Voltage
I
DQ
= 900 mA, ƒ = 470 MHz
55
1.03
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.29 A
0.88 A
1.47 A
2.20 A
4.41 A
6.61 A
8.81 A
11.02 A
Normalized Bias Voltage (V)
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
Output Power (dBm)
54
53
52
51
50
24
26
28
30
32
0
20
40
60
80
100
Supply Voltage (V)
Case Temperature (°C)
Data Sheet
4 of 11
Rev. 02, 2008-11-21
PTFA041501GL
PTFA041501HL
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
RD
G
Z Source
Z Load
-
W
AV
E
LE
NGTH
G
S
0.0
0.1
ARD
L
OA
D
-
HS
T
OW
ENGT
V
EL
470 MHz
450 MHz
Frequency
MHz
450
455
460
465
470
R
Z Source
Ω
jX
–3.20
–3.20
–3.10
–3.00
–2.90
0.88
0.84
0.84
0.84
0.83
Z Load
Ω
R
1.33
1.35
1.40
1.41
1.44
jX
0.22
0.31
0.38
0.47
0.57
Z Source
470 MHz
450 MHz
0. 1
See next page for circuit information
Data Sheet
5 of 11
WA
<---
Rev. 02, 2008-11-21
0.2
0. 1
D
S T
OW
A
Z
0
= 50
Ω
Z Load
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