Datasheet> 器件分类 > 存储> 存储> IDT70125S25J

文档预览

IDT70125S25J: 产品描述Dual-Port SRAM, 2KX9, 25ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52; 产品类别存储存储; 文件大小182KB，共15页; 制造商IDT (Integrated Device Technology)

下载文档详细参数选型对比全文预览

IDT70125S25J概述

Dual-Port SRAM, 2KX9, 25ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52

IDT70125S25J规格参数

参数名称	属性值
是否无铅	含铅
是否Rohs认证	不符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	LCC
包装说明	0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52
针数	52
Reach Compliance Code	not_compliant
ECCN代码	EAR99
最长访问时间	25 ns
其他特性	INTERRUPT FLAG; AUTOMATIC POWER-DOWN
I/O 类型	COMMON
JESD-30 代码	S-PQCC-J52
JESD-609代码	e0
长度	19.1262 mm
内存密度	18432 bit
内存集成电路类型	DUAL-PORT SRAM
内存宽度	9
湿度敏感等级	3
功能数量	1
端口数量	2
端子数量	52
字数	2048 words
字数代码	2000
工作模式	ASYNCHRONOUS
最高工作温度	70 °C
最低工作温度
组织	2KX9
输出特性	3-STATE
可输出	YES
封装主体材料	PLASTIC/EPOXY
封装代码	QCCJ
封装等效代码	LDCC52,.8SQ
封装形状	SQUARE
封装形式	CHIP CARRIER
并行/串行	PARALLEL
峰值回流温度（摄氏度）	225
电源	5 V
认证状态	Not Qualified
座面最大高度	4.57 mm
最大待机电流	0.015 A
最小待机电流	2 V
最大压摆率	0.26 mA
最大供电电压 (Vsup)	5.5 V
最小供电电压 (Vsup)	4.5 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
温度等级	COMMERCIAL
端子面层	Tin/Lead (Sn85Pb15)
端子形式	J BEND
端子节距	1.27 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	30
宽度	19.1262 mm
Base Number Matches	1

文档预览

下载PDF文档

全文
预览

HIGH-SPEED

2K x 9 DUAL-PORT

STATIC RAM

WITH BUSY & INTERRUPT

Features

IDT70121S/L

IDT70125S/L

High-speed access

Commercial: 25/35/45/55ns (max.)

Low-power operation

IDT70121/70125S

Active: 675mW (typ.)

Standby: 5mW (typ.)

IDT70121/70125L

Active: 675mW (typ.)

Standby: 1mW (typ.)

Fully asychronous operation from either port

MASTER IDT70121 easily expands data bus width to 18 bits or more

using SLAVE IDT70125 chip

On-chip port arbitration logic (IDT70121 only)

BUSY

output flag on Master;

BUSY

input on Slave

INT

flag for port-to-port communication

Battery backup operation2V data retention

TTL-compatible, signal 5V (±10%) power supply

Available in 52-pin PLCC

Industrial temperature range (40°C to +85°C) is available for

selected speeds

Description

The IDT70121/IDT70125 are high-speed 2K x 9 Dual-Port Static

RAMs. The IDT70121 is designed to be used as a stand-alone 9-bit Dual-

Port RAM or as a MASTER Dual-Port RAM together with the IDT70125

SLAVE Dual-Port in 18-bit-or-more word width systems. Using the IDT

MASTER/SLAVE Dual-Port RAM approach in 18-bit-or-wider memory

system applications results in full-speed, error-free operation without the

need for additional discrete logic.

Functional Block Diagram

R/W

I/O

- I/O

I/O

Control

BUSY

10L

(1,2)

I/O

-I/O

I/O

Control

BUSY

Address

Decoder

(1,2)

MEMORY

ARRAY

Address

Decoder

10R

R/W

ARBITRATION

INTERRUPT

LOGIC

R/W

INT

(2)

INT

2654 drw 01

(2)

NOTES:

1. 70121 (MASTER):

BUSY

is non-tri-stated push-pull output.

70125 (SLAVE):

BUSY

is input.

INT

is totem-pole output.

JUNE 1999

DSC 2654/8

IDT70125S25J相似产品对比

	IDT70125S25J	IDT70125L55J	IDT70121L45J	IDT70121S35J	IDT70121S45J	IDT70125L25J
描述	Dual-Port SRAM, 2KX9, 25ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52	Dual-Port SRAM, 2KX9, 55ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52	Dual-Port SRAM, 2KX9, 45ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52	Dual-Port SRAM, 2KX9, 35ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52	Dual-Port SRAM, 2KX9, 45ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52	Dual-Port SRAM, 2KX9, 25ns, CMOS, PQCC52, 0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52
是否无铅	含铅	含铅	含铅	含铅	含铅	含铅
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
零件包装代码	LCC	LCC	LCC	LCC	LCC	LCC
包装说明	0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52	0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52	0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52	0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52	0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52	0.750 X 0.750 INCH, 0.170 INCH HEIGHT, PLASTIC, LCC-52
针数	52	52	52	52	52	52
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	25 ns	55 ns	45 ns	35 ns	45 ns	25 ns
其他特性	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	INTERRUPT FLAG; AUTOMATIC POWER-DOWN	INTERRUPT FLAG; AUTOMATIC POWER-DOWN; BATTERY BACKUP
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	S-PQCC-J52	S-PQCC-J52	S-PQCC-J52	S-PQCC-J52	S-PQCC-J52	S-PQCC-J52
JESD-609代码	e0	e0	e0	e0	e0	e0
长度	19.1262 mm	19.1262 mm	19.1262 mm	19.1262 mm	19.1262 mm	19.1262 mm
内存密度	18432 bit	18432 bit	18432 bit	18432 bit	18432 bit	18432 bit
内存集成电路类型	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM
内存宽度	9	9	9	9	9	9
湿度敏感等级	3	3	1	3	1	3
功能数量	1	1	1	1	1	1
端口数量	2	2	2	2	2	2
端子数量	52	52	52	52	52	52
字数	2048 words	2048 words	2048 words	2048 words	2048 words	2048 words
字数代码	2000	2000	2000	2000	2000	2000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
组织	2KX9	2KX9	2KX9	2KX9	2KX9	2KX9
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
可输出	YES	YES	YES	YES	YES	YES
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	QCCJ	QCCJ	QCCJ	QCCJ	QCCJ	QCCJ
封装等效代码	LDCC52,.8SQ	LDCC52,.8SQ	LDCC52,.8SQ	LDCC52,.8SQ	LDCC52,.8SQ	LDCC52,.8SQ
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	225	225	225	225	225	225
电源	5 V	5 V	5 V	5 V	5 V	5 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	4.57 mm	4.57 mm	4.57 mm	4.57 mm	4.57 mm	4.57 mm
最大待机电流	0.015 A	0.015 A	0.005 A	0.015 A	0.015 A	0.015 A
最小待机电流	2 V	2 V	2 V	2 V	2 V	2 V
最大压摆率	0.26 mA	0.2 mA	0.205 mA	0.25 mA	0.245 mA	0.22 mA
最大供电电压 (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
最小供电电压 (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
端子面层	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)	Tin/Lead (Sn85Pb15)
端子形式	J BEND	J BEND	J BEND	J BEND	J BEND	J BEND
端子节距	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
端子位置	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
处于峰值回流温度下的最长时间	30	30	30	30	30	30
宽度	19.1262 mm	19.1262 mm	19.1262 mm	19.1262 mm	19.1262 mm	19.1262 mm

IDT70125S25J

IDT70125S25J概述

IDT70125S25J规格参数

文档预览

IDT70125S25J相似产品对比

推荐资源