MOSFET
- N-Channel
Silicon Carbide
650 V, 43.5 mW, 74 A
Product Preview
NTBG045N065SC1
MAXIMUM RATINGS
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current R
qJC
Power Dissipation R
qJC
Continuous Drain Current R
qJC
Power Dissipation R
qJC
Continuous Drain Current R
qJA
Power Dissipation R
qJA
Continuous Drain Current R
qJA
Power Dissipation R
qJA
Pulsed Drain Current R
qJC
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
T
A
= 100°C
T
C
= 25°C,
t
P
= 10
ms
Symbol
V
DSS
V
GS
I
DC
P
DC
I
DC
P
DC
I
DA
P
DA
I
DA
P
DA
I
DM
T
J
, T
stg
I
S
E
AS
Value
650
+18/−8
73.7
425
57.2
212
TBD
TBD
TBD
TBD
315
−55
to
+175
95.4
TBD
Unit
V
V
A
W
A
W
A
W
A
W
A
°C
A
mJ
V
(BR)DSS
650 V
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R
DS(on)
TYP
43.5 mW @ VGS = 18 V
I
D
MAX
74 A
N−CHANNEL MOSFET
Drain
(TAB)
Gate
(Pin 1)
Driver
Source
(Pin 2)
Power Source
(Pin 3, 4, 5, 6, 7)
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
GS
= 18 V, I
L(pk)
= 1 A,
L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
T
L
TBD
°C
D2PAK−7L
CASE 418BJ
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
AYWWZZ
NTBG045
N065SC1
A
= Assembly Location
Y
= Year
WW = Work Week
ZZ
= Lot Traceability
NTBG045N065SC1 = Specific Device Code
THERMAL RESISTANCE
Parameter
Junction−to−Case (Note 1)
Junction−to−Ambient (Note 1)
Symbol
R
qJC
R
qJA
Value
0.353
TBD
Unit
°C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2020
March, 2020
−
Rev. P0
1
Publication Order Number:
NTBG045N065SC1/D
NTBG045N065SC1
ELECTRICAL CHARACTERISTICS
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
R
DS(on)
V
GS(th)
V
GS(th)
/T
J
g
FS
R
G
C
ISS
C
OSS
C
RSS
C
OSSef
C
OSSer
E
OSS
Q
G(tot)
Q
GS
Q
GD
t
d(on)
t
d(off)
t
r
t
f
E
ON
E
OFF
E
TOT
V
SD
t
RR
Q
RR
E
REC
I
RRM
V
GS
=
−5
V, I
S
= 20 A,
dI/dt = 1000 A/ms, V
DS
= 520 V
V
GS
=
−5
V, I
D
= 20 A, T
C
= 25_C
V
GS
=
−5
V, I
D
= 20 A, T
C
= 175_C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
V
GS
=
−5/18
V, V
D
= 520 V,
I
D
= 20 A, R
G
= 6
W
V
D
= 520 V, I
D
= 20 A,
V
G
=
−5/18
V
V
DS
= 0 to 325 V, V
G
= 0 V, f = 1e6
V
D
= 325 V, V
G
= 0 V, f = 1e6
V
G
= V
D
, I
D
= 5.41e
−
03A
V
D
= 10 V, I
D
= 20 A
V
GS
= 0 V, I
D
= 2.50e
−
04A,
T
C
= 25_C
V
GS
= 0 V, I
D
= 2.50e
−
04A,
T
Jmax
= 175_C
V
DS
= 650 V, T
C
= 25_C
V
DS
= 650 V, T
C
= 175_C
Gate−to−Source Leakage Current
ON CHARACTERISTICS
Drain−to−Source On Resistance
V
G
= 18 V, I
D
= 20 A, T
C
= 25_C
V
G
= 18 V, I
D
= 20 A, T
C
= 175_C
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Forward Transconductance
43.48
52.4
3.19
−6.42
10.81
V
mV/_C
S
mW
V
GS
= +18/−8 V, V
DS
= 0 V
650
0.215
100
1
±1
V
V/_C
mA
mA
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
CHARGES, CAPACITANCES & GATE RESISTANCE
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Energy Related Output Capacitance
Coss Stored Energy
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn−Off Delay Time
Rise Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
26.29
38.49
8.15
10.03
0.179
0.035
0.214
mJ
ns
4.94
1803
156
13.78
302
205
10.87
85.1
26.11
27.04
mJ
nC
W
pF
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
4.29
3.76
32.33
177
19.14
9.56
ns
A
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTBG045N065SC1
TYPICAL CHARACTERISTICS
180
160
140
I
D
,Drain Current(A)
120
100
80
60
40
20
0
0
5
V
G
=5.00
V
G
=7.00
V
G
=9.00
V
G
=10.00
V
G
=12.00
V
G
=14.00
V
G
=16.00
V
G
=18.00
10
15
V
DS
,Drain to Source Voltage(V)
20
I
D
,Drain Current(A)
180
160
140
120
100
80
60
40
20
0
0
2
4
TEMP=−55.00
TEMP=25.00
TEMP=175.00
6
8
10
12
14
V
GS
,Gate to Source Voltage(V)
16
18
T
J
=25C
V
DS
=10.00
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1.4
Rdson,Drain to Source Resistance(Ohm)
1.2
1
0.8
0.6
0.4
0.2
0
Rdson,Drain to Source Resistance(Ohm)
I
D
=20
T
J
=25C
0.0455
0.045
0.0445
0.044
0.0435
0.043
0.0425
0.042
T
J
=25C
V
G
=18.00
0
5
10
15
20
25
I
D
,Drain Current(A)
30
35
40
8
9
10
11
12
13
14
15
V
GS
,Gate to Source Voltage(V)
16
17
18
Figure 3. On−Resistance vs. VGS
0.054
Rdson,Drain to Source Resistance(Ohm)
0.052
0.05
0.048
0.046
0.044
0.042
−100
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1e−08
V
GS
=0V
T
J
=25C
f=1e6Hz
I
D
=20
V
GS
=18V
C,Capacitance(F)
1e−09
1e−10
−50
0
50
100
T
J
,Junction Temperature(C)
150
200
1e−11
0.001
ciss
coss
crss
0.01
0.1
1
10
V
DS
,Drain to Source Voltage(V)
100
1e+03
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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NTBG045N065SC1
TYPICAL CHARACTERISTICS
35
30
25
Eoss(uJ)
20
15
10
5
0
eoss
0
100
200
300
400
500
V
DS
,Drain to Source Voltage(V)
600
700
20
V
GS
,Gate to Source Voltage(V)
V
GS
=0V
T
J
=25C
f=1e6Hz
I
D
=20
15
10
5
0
V
D
=130.00
V
D
=390.00
V
D
=520.00
10
20
30
40
50
60
70
Q
G
,Gate Charge(nC)
80
90
100
−5
0
Figure 7. Eoss vs. Drain−to−Source Voltage
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
10
I
S
,Reverse Drain Current
1
0.1
0.01
0.001
0.0001
1e−05
100
1e−06
0
0.5
1
TEMP=175.00
TEMP=25.00
TEMP=−55.00
1.5
2
2.5
3
3.5
4
4.5
V
SD
,Body Diode Forward Voltage(V)
5
V
GS
=0
1e−06
V
GS
=18.00
V
DS
=520
I
D
=20.00
1e−07
t,TIME(S)
1e−08
tdon
tdoff
tr
tf
10
R
G
,Gate Resistance(Ohm)
1e−09
1
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
I
AS
,AVALANCHE CURRENT(A)
100
Figure 10. Diode Forward Voltage vs. Current
temp=25.00
temp=125.00
temp=150.00
I
D
,Drain Current(A)
100
10
10
1
1
0.1
0.1
pulseDuration=10u
pulseDuration=100u
pulseDuration=1m
pulseDuration=10m
pulseDuration=100m
1
10
100
V
DS
,Drain to Source Voltage(V)
1e+03
0.1
1e−06
1e−05
0.0001
t
AV
,TIME IN AVALANCHE(s)
0.001
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Ipeak vs. Time in Avalanche
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NTBG045N065SC1
TYPICAL CHARACTERISTICS
12
10
8
Gfs(S)
6
4
2
0
T
J
=25C
V
DS
=10.00V
I
D
,Drain Current(A)
90
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
I
D
(A)
14
16
18
20
0
−100
imax
−50
0
50
100
T
C
,Case Temperature(C)
150
200
Figure 13. GFS vs. ID
1
D=0 is Single Pulse
Figure 14. Maximum Current vs. Case
Temperature
r(t),Effective Transient Thermal Resistance
0.1
0.01
P
D
t
1
0.001
1e−06 1e−05 0.0001 0.001 0.01
0.1
1
t,Rectangular Pulse Duration(sec)
t
2
Z
θJC
(t)=r(t)xR
θJC
Peak T =P
D
xZ
θJC
(t)+T
C
J
Duty Cycle,D=t
2
1
/t
D=0.00
D=0.01
D=0.02
D=0.05
D=0.10
D=0.20
D=0.50
10
100
Figure 15. Thermal Response
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
NTBG045N065SC1
Top Marking
NTBG045N065SC1
Package
D2PAK
Packing Method
Tape & Reel
Reel Size
TBD
Tape Width
TBD
Quantity
800 Units
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