MOSFET
- N-Channel
Silicon Carbide
650 V, 44 mW, 64 A
Product Preview
NTHL045N065SC1
MAXIMUM RATINGS
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current R
qJC
Power Dissipation R
qJC
Continuous Drain Current R
qJC
Power Dissipation R
qJC
Continuous Drain Current R
qJA
Power Dissipation R
qJA
Continuous Drain Current R
qJA
Power Dissipation R
qJA
Pulsed Drain Current R
qJC
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
T
A
= 100°C
T
C
= 25°C,
t
P
= 10
ms
Symbol
V
DSS
V
GS
I
DC
P
DC
I
DC
P
DC
I
DA
P
DA
I
DA
P
DA
I
DM
T
J
, T
stg
I
S
E
AS
Value
650
+18/−8
64.2
325
50.9
162
TBD
TBD
TBD
TBD
304
−55
to
+175
72.8
TBD
Unit
V
V
A
W
A
W
A
W
A
W
A
°C
A
mJ
G
G
V
(BR)DSS
650 V
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R
DS(on)
TYP
44 mW @ V
GS
= 18 V
I
D
MAX
64 A
N−CHANNEL MOSFET
D
S
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
GS
= 18 V, I
L(pk)
= 1 A,
L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
T
L
TBD
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
D S
TO−247−3LD
CASE 340CH
MARKING DIAGRAM
THERMAL RESISTANCE
Parameter
Junction−to−Case (Note 1)
Junction−to−Ambient (Note 1)
Symbol
R
qJC
R
qJA
Value
0.461
TBD
Unit
°C/W
&Z&3&K
NTHL045
N065SC1
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
&Z
&3
&K
NTHL045N065SC1
= Assembly Plant Code
= Date Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2020
March, 2020
−
Rev. P0
1
Publication Order Number:
NTHL045N065SC1/D
NTHL045N065SC1
ELECTRICAL CHARACTERISTICS
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
R
DS(on)
V
GS(th)
V
GS(th)
/T
J
g
FS
R
G
C
ISS
C
OSS
C
RSS
C
OSSef
C
OSSer
E
OSS
Q
G(tot)
Q
GS
Q
GD
t
d(on)
t
d(off)
t
r
t
f
E
ON
E
OFF
E
TOT
V
SD
t
RR
Q
RR
E
REC
I
RRM
V
GS
=
−5
V, I
S
= 20 A,
dI/dt = 1000 A/ms, V
DS
= 520 V
V
GS
=
−5
V, I
D
= 20 A, T
C
= 25_C
V
GS
=
−5
V, I
D
= 20 A, T
C
= 175_C
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
Peak Reverse Recovery Current
V
GS
=
−5/18
V, V
D
= 520 V,
I
D
= 20 A, R
G
= 6
W
V
D
= 520 V, I
D
= 20 A,
V
G
=
−5/18
V
V
DS
= 0 to 325 V, V
G
= 0 V, f = 1e6
V
D
= 325 V, V
G
= 0 V, f = 1e6
V
G
= V
D
, I
D
= 5.41e
−
03A
V
D
= 10 V, I
D
= 20 A
V
GS
= 0 V, I
D
= 2.50e
−
04A,
T
C
= 25_C
V
GS
= 0 V, I
D
= 2.50e
−
04A,
T
Jmax
= 175_C
V
DS
= 650 V, T
C
= 25_C
V
DS
= 650 V, T
C
= 175_C
Gate−to−Source Leakage Current
ON CHARACTERISTICS
Drain−to−Source On Resistance
V
G
= 18 V, I
D
= 20 A, T
C
= 25_C
V
G
= 18 V, I
D
= 20 A, T
C
= 175_C
Gate Threshold Voltage
Gate Threshold Voltage Temperature
Coefficient
Forward Transconductance
43.98
52.8
3.19
−6.42
10.97
V
mV/_C
S
mW
V
GS
= +18/−8 V, V
DS
= 0 V
650
0.215
100
1
±1
V
V/_C
mA
mA
mA
Symbol
Test Conditions
Min
Typ
Max
Unit
CHARGES, CAPACITANCES & GATE RESISTANCE
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Energy Related Output Capacitance
Coss Stored Energy
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn−Off Delay Time
Rise Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
41.74
39.06
10.43
11.55
0.332
0.047
0.379
mJ
ns
4.94
1805
158
14.53
304
207
10.96
85.3
26.14
27.18
mJ
nC
W
pF
SOURCE−TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
4.28
3.79
26.91
187
25.05
10.18
ns
A
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NTHL045N065SC1
TYPICAL CHARACTERISTICS
180
160
140
I
D
,Drain Current(A)
120
100
80
60
40
20
0
0
5
V
G
=5.00
V
G
=7.00
V
G
=9.00
V
G
=10.00
V
G
=12.00
V
G
=14.00
V
G
=16.00
V
G
=18.00
10
15
V
DS
,Drain to Source Voltage(V)
20
I
D
,Drain Current(A)
180
160
140
120
100
80
60
40
20
0
0
2
4
TEMP=−55.00
TEMP=25.00
TEMP=175.00
6
8
10
12
14
V
GS
,Gate to Source Voltage(V)
16
18
T
J
=25C
V
DS
=10.00
Figure 1. On−Region Characteristics
1.4
Rdson,Drain to Source Resistance(Ohm)
1.2
1
0.8
0.6
0.4
0.2
0
0.046
Rdson,Drain to Source Resistance(Ohm)
0.0455
0.045
0.0445
0.044
0.0435
0.043
0.0425
Figure 2. Transfer Characteristics
I
D
=20
T
J
=25C
T
J
=25C
V
G
=18.00
0
5
10
15
20
25
I
D
,Drain Current(A)
30
35
40
8
9
10
11
12
13
14
15
V
GS
,Gate to Source Voltage(V)
16
17
18
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1e−08
V
GS
=0V
T
J
=25C
f=1e6Hz
0.054
Rdson,Drain to Source Resistance(Ohm)
0.052
0.05
0.048
0.046
0.044
I
D
=20
V
GS
=18V
C,Capacitance(F)
1e−09
1e−10
0.042
−100
−50
0
50
100
T
J
,Junction Temperature(C)
150
200
1e−11
0.001
ciss
coss
crss
0.01
0.1
1
10
V
DS
,Drain to Source Voltage(V)
100
1e+03
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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NTHL045N065SC1
TYPICAL CHARACTERISTICS
35
V
GS
,Gate to Source Voltage(V)
30
25
Eoss(uJ)
20
15
10
5
0
eoss
0
100
200
300
400
500
V
DS
,Drain to Source Voltage(V)
600
700
V
GS
=0V
T
J
=25C
f=1e6Hz
25
20
15
10
5
0
−5
0
I
D
=20
V
D
=130.00
V
D
=390.00
V
D
=520.00
10
20
30
40
50
60
70
Q
G
,Gate Charge(nC)
80
90
100
Figure 7. Eoss vs. Drain−to−Source Voltage
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
10
I
S
,Reverse Drain Current
1
0.1
0.01
0.001
0.0001
1e−05
TEMP=175.00
TEMP=25.00
TEMP=−55.00
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
SD
,Body Diode Forward Voltage(V)
5
V
GS
=0
1e−06
V
GS
=18.00
V
DS
=520
I
D
=20.00
1e−07
t,TIME(S)
1e−08
tdon
tdoff
tr
tf
10
R
G
,Gate Resistance(Ohm)
100
1e−09
1
1e−06
0
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
I
AS
,AVALANCHE CURRENT(A)
100
Figure 10. Diode Forward Voltage vs. Current
temp=25.00
temp=125.00
temp=150.00
I
D
,Drain Current(A)
100
10
10
1
1
0.1
0.1
pulseDuration=10u
pulseDuration=100u
pulseDuration=1m
pulseDuration=10m
pulseDuration=100m
1
10
100
V
DS
,Drain to Source Voltage(V)
1e+03
0.1
1e−06
1e−05
0.0001
t
AV
,TIME IN AVALANCHE(s)
0.001
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Ipeak vs. Time in Avalanche
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NTHL045N065SC1
TYPICAL CHARACTERISTICS
12
10
8
Gfs(S)
6
4
2
0
T
J
=25C
V
DS
=10.00V
I
D
,Drain Current(A)
80
70
60
50
40
30
20
10
0
2
4
6
8
10
12
I
D
(A)
14
16
18
20
0
−100
imax
−50
0
50
100
T
C
,Case Temperature(C)
150
200
Figure 13. GFS vs. ID
r(t),Effective Transient Thermal Resistance
1
D=0 is Single Pulse
Figure 14. Maximum Current vs. Case
Temperature
0.1
0.01
P
D
t
1
0.001
1e−06 1e−05 0.0001 0.001 0.01
0.1
1
t,Rectangular Pulse Duration(sec)
t
2
Z
θJC
(t)=r(t)xR
θJC
Peak T =P
D
xZ
θJC
(t)+T
C
J
Duty Cycle,D=t
2
1
/t
D=0.00
D=0.01
D=0.02
D=0.05
D=0.10
D=0.20
D=0.50
10
100
Figure 15. Thermal Response
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
NTHL045N065SC1
Top Marking
NTHL045N065SC1
Package
TO−247
Long Lead
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 Units
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