RJK5014DPP
Silicon N Channel MOS FET
High Speed Power Switching
Features
•
Low on-resistance
R
DS(on)
= 0.325
Ω
typ. (at I
D
= 9.5 A, V
GS
= 10 V, Ta = 25
°C)
•
Low leakage current
•
High speed switching
REJ03G1530-0200
Rev.2.00
Dec 02, 2009
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
D
G
1. Gate
2. Drain
3. Source
1
2 3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1.
2.
3.
4.
PW
≤
10
μs,
duty cycle
≤
1%
Value at Tc = 25°C
STch = 25°C, Tch
≤
150°C
Limited by maximum safe operation area
Symbol
V
DSS
V
GSS
I
DNote4
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
Note2
θch-c
Tch
Tstg
Ratings
500
±30
19
38
19
38
4
0.88
35
3.57
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1530-0200 Rev.2.00 Dec 02, 2009
Page 1 of 6
RJK5014DPP
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 5. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
500
—
—
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.325
1800
190
24
36
41
93
39
46
9
20
0.91
320
Max
—
1
±0.1
4.5
0.390
—
—
—
—
—
—
—
—
—
—
1.55
—
Unit
V
μA
μA
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 500 V, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 9.5 A, V
GS
= 10 V
Note5
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 9.5 A
V
GS
= 10 V
R
L
= 26.3
Ω
Rg = 10
Ω
V
DD
= 400 V
V
GS
= 10 V
I
D
= 19 A
I
F
= 19 A, V
GS
= 0
Note5
I
F
= 19 A, V
GS
= 0
di
F
/dt = 100 A/μs
REJ03G1530-0200 Rev.2.00 Dec 02, 2009
Page 2 of 6
RJK5014DPP
Main Characteristics
Maximum Safe Operation Area
100
10
Typical Output Characteristics
40
Ta = 25°C
Pulse Test
PW
μ
s
10 V
6V
5.8 V
Drain Current I
D
(A)
Drain Current I
D
(A)
10
=
10
0
μ
s
30
1
Operation in this
area is limited by
R
DS(on)
20
5.6 V
5.4 V
0.1
10
0.01
Tc = 25°C
1 shot
1
10
100
1000
5.2 V
V
GS
= 5 V
0.001
0.1
0
0
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source on State Resistance
R
DS(on)
(Ω)
10
V
GS
= 10 V
Ta = 25°C
Pulse Test
Typical Transfer Characteristics
20
10
V
DS
= 10 V
Pulse Test
Drain Current I
D
(A)
5
2
1
0.5
0.2
0.1
0
2
4
6
8
10
Tc =
−25°C
25°C
75°C
1
0.1
1
10
100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
V
GS
= 10 V
I
D
= 8 A
0.8 Pulse Test
Body-Drain Diode Reverse
Recovery Time (Typical)
1000
0.6
Reverse Recovery Time trr (ns)
1
100
0.4
0.2
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
1
10
100
0
-25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
REJ03G1530-0200 Rev.2.00 Dec 02, 2009
Page 3 of 6
RJK5014DPP
Typical Capacitance vs.
Drain to Source Voltage (Typical)
Drain to Source Voltage V
DS
(V)
10000
Ciss
Dynamic Input Characteristics (Typical)
I
D
= 19 A
Ta = 25
°C
V
GS
V
DD
= 400 V
250 V
100 V
V
DS
1000
600
12
100
Coss
400
8
10
V
GS
= 0
f = 1 MHz
Ta = 25°C
50
100
150
Crss
200
V
DD
= 400 V
250 V
100 V
20
40
60
80
4
1
0
200
250
0
0
0
100
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
40
Gate to Source Cutoff Voltage V
GS(off)
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Reverse Drain Current I
DR
(A)
V
GS
= 0 V
Ta = 25
°C
Pulse Test
30
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
V
DS
= 10 V
4
3
20
I
D
= 10 mA
1 mA
0.1 mA
2
1
10
0
0
0.4
0.8
1.2
1.6
2.0
0
-25
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature
Tc (°C)
REJ03G1530-0200 Rev.2.00 Dec 02, 2009
Page 4 of 6
Gate to Source Voltage V
GS
(V)
800
16
Capacitance C (pF)
RJK5014DPP
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
10
Tc = 25°C
1
D=1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
θ
ch – c(t) =
γ
s (t) •
θ
ch – c
θ
ch – c = 3.57°C/W, Tc = 25°C
0.01
1
p
ot
sh
e
uls
P
DM
PW
T
D=
PW
T
0.001
10
μ
100
μ
1m
10 m
100 m
1
10
100
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 250 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(on)
tr
90%
td(off)
tf
REJ03G1530-0200 Rev.2.00 Dec 02, 2009
Page 5 of 6
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