RJK1526DPJ, RJK1526DPE, RJK1526DPF
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1859-0100
Rev.1.00
Nov 06, 2009
Features
•
Low on-resistance
R
DS(on)
= 0.036
Ω
typ. (at I
D
= 25 A, V
GS
= 10 V, Ta = 25°C)
•
Low leakage current
•
High speed switching
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L)
4
: PRSS0004AE-B
LDPAK(S)-(1)
4
: PRSS0004AE-C
LDPAK(S)-(2) )
4
D
G
1
1
2
3
1
1. Gate
2. Drain
3. Source
4. Drain
S
2
3
2
3
RJK1526DPJ
RJK1526DPE
RJK1526DPF
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μs,
duty cycle
≤
1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch
≤
150°C
Symbol
V
DSS
V
GSS
I
D
I
D (pulse)Note1
I
DR
I
DR (pulse)Note1
I
APNote3
E
ARNote3
Pch
Note2
θch-c
Tch
Tstg
Ratings
150
±30
50
120
50
120
25
46.8
100
1.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1859-0100 Rev.1.00 Nov 06, 2009
Page 1 of 7
RJK1526DPJ, RJK1526DPE, RJK1526DPF
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Qg
Qgs
Qgd
V
DF
t
rr
Min
150
—
—
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
0.036
1800
380
56
35
141
86
15
46
12
21
1.0
120
Max
—
1
±0.1
4.5
0.042
—
—
—
—
—
—
—
—
—
—
1.5
—
Unit
V
μA
μA
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
Test conditions
I
D
= 10 mA, V
GS
= 0
V
DS
= 150 V, V
GS
= 0
V
GS
=
±30
V, V
DS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 25 A, V
GS
= 10 V
Note4
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
I
D
= 25 A
V
GS
= 10 V
R
L
= 3
Ω
Rg = 10
Ω
V
DD
= 120 V
V
GS
= 10 V
I
D
= 50 A
I
F
= 50 A, V
GS
= 0
Note4
I
F
= 50 A, V
GS
= 0
di
F
/dt = 100 A/μs
REJ03G1859-0100 Rev.1.00 Nov 06, 2009
Page 2 of 7
RJK1526DPJ, RJK1526DPE, RJK1526DPF
Main Characteristics
Maximum Safe Operation Area
1000
100
Typical Output Characteristics
8.5 V
9V
80 10 V
60
Pulse Test
Ta = 25°C
8V
Drain Current I
D
(A)
Drain Current I
D
(A)
100
PW
10
=
10
0
7.5V
7V
μ
s
10
Operation in this
area is limited by
R
DS(on)
μ
s
6.5 V
6V
1
40
0.1
Tc = 25°C
1 shot
0.01
0.1
1
20
5.5 V
V
GS
= 5 V
0
10
100
1000
0
4
8
12
16
20
Drain to Source Voltage V
DS
(V)
Drain to Source Voltage V
DS
(V)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Typical Transfer Characteristics
Drain to Source on State Resistance
R
DS(on)
(mΩ)
100
Tc =
−25°C
25°C
1000
V
GS
= 10 V
Ta = 25°C
Pulse Test
Drain Current I
D
(A)
80
75°C
60
100
40
20
V
DS
= 10 V
Pulse Test
0
2
4
6
8
10
10
10
100
1000
Gate to Source Voltage V
GS
(V)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
V
GS
= 10 V
Pulse Test
0.08
I
D
= 50 A
0.06
10 A
25 A
Drain Current I
D
(A)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Body-Drain Diode Reverse
Recovery Time (Typical)
Reverse Recovery Time trr (ns)
0.10
1000
100
0.04
0.02
di / dt = 100 A /
μs
V
GS
= 0, Ta = 25°C
10
1
10
100
1000
0
-25
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Reverse Drain Current I
DR
(A)
REJ03G1859-0100 Rev.1.00 Nov 06, 2009
Page 3 of 7
RJK1526DPJ, RJK1526DPE, RJK1526DPF
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
10000
Ta = 25°C
Dynamic Input Characteristics (Typical)
I
D
= 50 A
Ta = 25
°C
V
GS
Capacitance C (pF)
Ciss
1000
180
V
DS
V
DD
= 120 V
60 V
30 V
12
Coss
100
Crss
V
GS
= 0
f = 1 MHz
0
20
40
60
80
100
120
8
60
V
DD
= 120 V
60 V
30 V
0
20
40
60
80
4
10
0
0
100
Drain to Source Voltage V
DS
(V)
Gate Charge Qg (nC)
100
Gate to Source Cutoff Voltage V
GS(off)
(V)
Reverse Drain Current vs.
Source to Drain Voltage (Typical)
Reverse Drain Current I
DR
(A)
V
GS
= 0 V
Ta = 25
°C
Pulse Test
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
5
V
DS
= 10 V
80
4
60
3
I
D
= 10 mA
1 mA
0.1 mA
40
20
0
0
0.4
0.8
1.2
1.6
2.0
2
1
0
-25
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature
Tc (°C)
REJ03G1859-0100 Rev.1.00 Nov 06, 2009
Page 4 of 7
Gate to Source Voltage V
GS
(V)
240
16
RJK1526DPJ, RJK1526DPE, RJK1526DPF
Normalized Transient Thermal Impedance vs. Pulse Width
3
Normalized Transient Thermal Impedance
γ
s (t)
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 1.25°C/W, Tc = 25°C
P
DM
PW
T
0.03
0.02
1
e
0.0
puls
ot
sh
1
100
μ
1m
10 m
Pulse Width
D=
PW
T
0.01
10
μ
100 m
PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
10
Ω
Vin
10 V
V
DD
= 75 V
Vin
Vout
10%
10%
Vout
Monitor
Waveform
90%
10%
90%
td(off)
tf
90%
td(on)
tr
REJ03G1859-0100 Rev.1.00 Nov 06, 2009
Page 5 of 7
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