Preliminary
RJK0629DPE
N Channel Power MOS FET
High-Speed Switching Use
Features
•
V
DSS
: 60 V
•
R
DS(on)
: 4.5 mΩ (Max)
•
I
D
: 85 A
REJ03G1874-0100
Rev.1.00
Dec 15, 2009
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
2, 4
D
4
1
1G
2
3
1.
2.
3.
4.
Gate
Drain
Source
Drain
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μs,
duty cycle
≤
1%
2. Tc = 25°C, Tch
≤
150°C, L = 100
μH
3. Value at Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D
(pulse)
Note
1
I
DR
I
DR
(pulse)
Note
1
I
AP
Note
2
Pch
Note
3
θch-c
Tch
Tstg
Value
60
±20
85
340
85
340
55
100
1.25
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
REJ03G1874-0100 Rev.1.00 Dec 15, 2009
Page 1 of 6
RJK0629DPE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note:
4. Pulse test
Symbol
V
(BR)DSS
V
(BR)GSS
I
DSS
I
GSS
V
GS(off)
V
DS(on)
R
DS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
60
±20
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
161
3.75
4.9
4100
1000
780
85
11
25
20
40
100
40
0.92
50
Max
—
—
1
±10
2.0
194
4.5
6.6
—
—
—
—
—
—
—
—
—
—
1.2
—
Unit
V
V
μA
μA
V
mV
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 100
μA,
V
GS
= 0
I
G
=
±100 μA,
V
DS
= 0
V
DS
= 60 V, V
GS
= 0
V
GS
=
±20
V, V
DS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 43A, V
GS
= 10 V
Note
4
I
D
= 43A, V
GS
= 10 V
Note
4
I
D
= 43 A, V
GS
= 4.5 V
Note
4
V
DS
= 10 V, V
GS
= 0
f = 1 MHz
V
DD
= 25 V, V
GS
= 10 V,
I
D
= 85 A
V
DD
= 30V, I
D
= 43A,
V
GS
= 10 V, R
G
= 4.7
Ω
I
F
= 85 A, V
GS
= 0
Note
4
I
F
= 85 A, V
GS
= 0,
di
F
/dt = 100 A/μs
REJ03G1874-0100 Rev.1.00 Dec 15, 2009
Page 2 of 6
RJK0629DPE
Preliminary
Main Characteristics
Power vs. Temperature Derating
200
1000
10
μ
s
Maximum Safe Operation Area
Pch (W)
I
D
(A)
150
100
1
10
0
μ
s
s
m
Channel Dissipation
10
Operation in
1
this area is
limited by R
DS(on)
PW
100
Drain Current
=
10
s
m
DC
Op
er
at
ion
50
0.1
0.01
0.1
Tc = 25°C
1 shot Pulse
0
50
100
150
200
1
10
100
Case Temperature
Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
100
10 V
5V
100
3V
Typical Transfer Characteristics
Tc = 175°C
Drain Current I
D
(A)
Drain Current I
D
(A)
80
10
25°C
−40°C
60
V
GS
= 2.7 V
1
40
0.1
20
Tc = 25°C
Pulse Test
0
5
10
0.01
0.001
0
V
DS
= 10 V
Pulse Test
1
2
3
4
5
Drain to Source Voltage
V
DS
(V)
Gate to Source Voltage
V
GS
(V)
Static Drain to Source on State Resistance
vs. Gate to Source Voltage
Drain to Source on State Resistance
R
DS (on)
(mΩ)
20
I
D
= 43 A
Pulse Test
15
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS (on)
(mΩ)
100
Tc = 25°C
Pulse Test
10
Tc = 175°C
10
V
GS
= 4.5 V
10 V
5
25°C
−40°C
0
0
4
8
12
16
20
1
1
10
100
Gate to Source Voltage
V
GS
(V)
Drain Current
I
D
(A)
REJ03G1874-0100 Rev.1.00 Dec 15, 2009
Page 3 of 6
RJK0629DPE
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
I
D
= 43 A
10000
Preliminary
Typical Capacitance vs.
Drain to Source Voltage
Static Drain to Source on State Resistance
R
DS(on)
(mΩ)
Capacitance C (pF)
16
Ciss
3000
12
V
GS
= 4.5 V
8
1000
Coss
Crss
Tc = 25°C
V
GS
= 0
f = 1 MHz
0
5
10
15
20
25
30
4
10 V
300
0
−50
100
0
50
100
150
200
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
50
V
GS
16
Reverse Drain Current vs.
Source to Drain Voltage
20
100
Reverse Drain Current I
DR
(A)
Tc = 25°C
I
D
= 85 A
V
DD
= 25 V
10 V
5V
V
DS
10 V
80
Tc = 25°C
Pulse Test
40
30
12
60
20
V
DD
= 25 V
10 V
5V
40
80
120
160
8
40
V
GS
= 0,
−5
V
10
4
0
200
20
0
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
500
I
AP
= 55 A
V
DD
= 25 V
duty < 0.1 %
Rg
≥
50
Ω
Source to Drain Voltage V
SD
(V)
400
300
200
100
0
25
50
75
100
125
150
175
Channel Temperature Tch (°C)
REJ03G1874-0100 Rev.1.00 Dec 15, 2009
Page 4 of 6
RJK0629DPE
Normalized Transient Thermal Impedance
γ
s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Preliminary
1
D=1
0.5
0.2
0.1
0.1
0.05
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 1.25°C/W, Tc = 25°C
0.01
ho
u
tp
lse
P
DM
PW
T
D=
PW
T
0.02
1s
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Avalanche Waveform
1
2
L
•
I
AP
•
2
V
DSS
V
DSS
– V
DD
V
(BR)DSS
Rg
D. U. T
V
DD
I
AP
V
DS
Vin
15 V
50
Ω
I
D
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 30 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
REJ03G1874-0100 Rev.1.00 Dec 15, 2009
Page 5 of 6
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