Preliminary
RJK0392DPA
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 2.7 m
Ω
typ. (at V
GS
= 10 V)
•
Pb-free
•
•
•
•
•
REJ03G1825-0210
Rev.2.10
Sep 29, 2009
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μs,
duty cycle
≤
1%
2. Value at Tch = 25°C, Rg
≥
50
Ω
3. Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP
E
AR Note 2
Pch
Note3
θch-c
Note3
Tch
Tstg
Note 2
Ratings
30
±20
45
180
45
17
28.9
45
2.78
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1825-0210 Rev.2.10 Sep 29, 2009
Page 1 of 6
RJK0392DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
2.7
3.4
150
4260
535
280
0.8
26
12
5.9
15.2
6.2
55
8
0.81
30
Max
—
± 0.1
1
2.5
3.5
4.8
—
—
—
—
—
—
—
—
—
—
—
—
1.06
—
Unit
V
μA
μA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±20 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 22.5 A, V
GS
= 10 V
Note4
I
D
= 22.5 A, V
GS
= 4.5 V
Note4
I
D
= 22.5 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 45 A
V
GS
= 10 V, I
D
= 22.5 A
V
DD
≅
10 V
R
L
= 0.44
Ω
Rg = 4.7
Ω
I
F
= 45 A, V
GS
= 0
Note4
I
F
=45 A, V
GS
= 0
di
F
/ dt = 100 A/
μs
REJ03G1825-0210 Rev.2.10 Sep 29, 2009
Page 2 of 6
RJK0392DPA
Preliminary
Main Characteristics
Power
vs. Temperature
Derating
80
1000
Maximum
Safe
Operation
Area
Pch (W)
I
D
(A)
10
μ
s
100
μ
60
Channel
Dissipation
Drain
Current
40
10
Operation in
this area
is
DS(on)
20
1
0
50
100
150
200
Tc =
25°C
0.1 1
shot
Pulse
0.1
1
10
100
Case Temperature
Tc
(°C)
Drain to Source
Voltage
V
DS
(V)
Typical Output Characteristics
50
4.5 V
10
V
3.2
V
Pulse
Test
50
Typical Transfer Characteristics
V
DS
=
10
V
Pulse
Test
I
D
(A)
3.0V
30
I
D
(A)
Drain
Current
40
40
30
Drain
Current
20
2.8
V
10
20
25°C
–25°C
V
GS
=
2.6
V
10
Tc =
75°C
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source
Voltage
V
DS
(V)
Gate to Source
Voltage
V
GS
(V)
Drain to Source Saturation
Voltage vs.
Gate to Source
Voltage
200
Static Drain to Source on State Resistance
vs.
Drain
Current
Drain to Source on State Resistance
R
DS (on)
(mΩ)
Drain to Source Saturation
Voltage
V
DS (on)
(mV)
100
Pulse
Test
Pulse
Test
150
30
100
10
V
GS
= 4.5 V
3
10
V
1
1
I
D
=
20 A
50
10 A
5A
0
4
8
12
16
20
3
10
30
100
300 1000
Gate to Source
Voltage
V
GS
(V)
Drain
Current
I
D
(A)
REJ03G1825-0210 Rev.2.10 Sep 29, 2009
Page 3 of 6
RJK0392DPA
Static Drain to Source on State Resistance
vs.
Temperature
10
Pulse Test
10000
Preliminary
Typical
Capacitance vs.
Drain to Source
Voltage
Ciss
3000
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Capacitance C
(pF)
8
1000
Coss
300
Crss
100
30
10
0
V
GS
= 0
f
= 1
MHz
10
20
30
6
V
GS
= 4.5
V
I
D
= 2 A, 5 A, 10 A
4
2
0
–25
10
V
2 A, 5 A, 10 A
0
25
50
75
100 125 150
Case
Temperature
Tc
(
°
C)
Drain to Source
Voltage V
DS
(V)
Reverse Drain
Current vs.
Source to Drain
Voltage
V
GS
(V)
20
50
Dynamic Input
Characteristics
V
DS
(V)
50
Reverse Drain
Current
I
DR
(A)
I
D
= 45 A
V
GS
V
DD
= 25
V
10
V
V
DS
Pulse Test
10
V
40
5
V
40
16
Drain to Source
Voltage
30
12
Gate to Source
Voltage
30
20
8
20
V
GS
= 0, –5
V
10
V
DD
= 25
V
10
V
0
20
40
60
80
4
10
0
0
100
0
0.4
0.8
1.2
1.6
2.0
Gate
Charge
Qg (nc)
Source to Drain
Voltage V
SD
(V)
Maximum
Avalanche Energy
vs.
Channel
Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
50
I
AP
= 17 A
V
DD
= 15
V
duty < 0.1 %
Rg
≥
50
Ω
40
30
20
10
0
25
50
75
100
125
150
Channel
Temperature Tch (°C)
REJ03G1825-0210 Rev.2.10 Sep 29, 2009
Page 4 of 6
RJK0392DPA
Preliminary
Normalized Transient Thermal Impedance vs.
Pulse Width
Normalized Transient Thermal Impedance
γ
s
(t)
3
1
D
=
1
0.5
0.3
0.2
0.1
0
.1
0
.
05
θch
–
c (t)
=
γ
s
(t)
•
θch
–
c
θch
–
c
=
2.78°C/W,
Tc =
25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D
=
PW
T
0.03
2
0
.
0
s
e
u
l
p
1
0
.
0
h
ot
1
s
100
μ
0.01
10
μ
Pulse Width PW (s)
Avalanche
Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Rg
D.
U. T
I
D
Vin
15
V
50
Ω
0
V
DD
Switching
Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
=
10
V
Vin
Vout
Vin
10
V
Vout
Monitor
Switching
Time
Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
t
f
REJ03G1825-0210 Rev.2.10 Sep 29, 2009
Page 5 of 6
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