Preliminary
RJK0391DPA
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 2.2 m
Ω
typ. (at V
GS
= 10 V)
•
Pb-free
•
Halogen-free
•
•
•
•
•
REJ03G1824-0200
Rev.2.00
Sep 29, 2009
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 6 7 8
D D D D
5 6 7 8
4
G
4 3 2 1
1, 2, 3
Source
4
Gate
5, 6, 7, 8 Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μs,
duty cycle
≤
1%
2. Value at Tch = 25°C, Rg
≥
50
Ω
3. Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP
E
AR Note 2
Pch
Note3
θch-c
Note3
Tch
Tstg
Note 2
Ratings
30
±20
50
200
50
25
62.5
50
2.5
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1824-0200 Rev.2.00 Sep 29, 2009
Page 1 of 6
RJK0391DPA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate Resistance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V
(BR)DSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
2.2
2.8
160
5600
710
370
0.95
34
16
7.4
15.3
8
66
14.1
0.80
35
Max
—
± 0.5
1
2.5
2.9
3.9
—
—
—
—
—
—
—
—
—
—
—
—
1.04
—
Unit
V
μA
μA
V
mΩ
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
V
GS
= ±20 V, V
DS
= 0
V
DS
= 30 V, V
GS
= 0
V
DS
= 10 V, I
D
= 1 mA
I
D
= 25 A, V
GS
= 10 V
Note4
I
D
= 25 A, V
GS
= 4.5 V
Note4
I
D
= 25 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
V
DD
= 10 V
V
GS
= 4.5 V
I
D
= 50 A
V
GS
= 10 V, I
D
= 25 A
V
DD
≅
10 V
R
L
= 0.4
Ω
Rg = 4.7
Ω
I
F
= 50 A, V
GS
= 0
Note4
I
F
=50 A, V
GS
= 0
di
F
/ dt = 100 A/
μs
REJ03G1824-0200 Rev.2.00 Sep 29, 2009
Page 2 of 6
RJK0391DPA
Preliminary
Main Characteristics
Power
vs. Temperature
Derating
80
1000
Maximum
Safe
Operation
Area
Pch (W)
I
D
(A)
60
100
μ
s
Channel
Dissipation
Drain
Current
40
10
1 ms
Operation in
s
s
μ
s
20
1
limited by
R
DS(on)
0
50
100
150
200
Tc =
25°C
0.1 1
shot
Pulse
0.1
1
10
100
Case Temperature
Tc
(°C)
Drain to Source
Voltage
V
DS
(V)
Typical Output Characteristics
50
4.5 V
10
V
50
3.1
V
Pulse
Test
3.0
V
2.9
V
30
2.8
V
Typical Transfer Characteristics
V
DS
=
10
V
Pulse
Test
I
D
(A)
I
D
(A)
Drain
Current
40
40
30
Drain
Current
20
20
25°C
Tc =
75°C
–25°C
10
V
GS
=
2.6
V
10
0
2
4
6
8
10
0
1
2
3
4
5
Drain to Source
Voltage
V
DS
(V)
Gate to Source
Voltage
V
GS
(V)
Drain to Source Saturation
Voltage vs.
Gate to Source
Voltage
Static Drain to Source on State Resistance
vs.
Drain
Current
Drain to Source Saturation
Voltage
V
DS (on)
(mV)
120
Pulse
Test
90
Drain to Source on State Resistance
R
DS (on)
(mΩ)
100
Pulse
Test
30
60
10
I
D
=
20 A
30
10 A
5A
3
V
GS
= 4.5 V
10
V
0
4
8
12
16
20
1
1
3
10
30
100
300 1000
Gate to Source
Voltage
V
GS
(V)
Drain
Current
I
D
(A)
REJ03G1824-0200 Rev.2.00 Sep 29, 2009
Page 3 of 6
RJK0391DPA
Static Drain to Source on State Resistance
vs. Temperature
10
Pulse
Test
10000
3000
Preliminary
Typical Capacitance vs.
Drain to Source
Voltage
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Capacitance C
(pF)
8
Ciss
1000
300
100
30
10
0
V
GS
=
0
f =
1
MHz
10
20
30
Coss
Crss
6
I
D
=
5 A, 10 A, 20 A
4
V
GS
= 4.5 V
2
10
V
0
–25
5 A, 10 A, 20 A
0
25
50
75
100 125 150
Case Temperature
Tc
(
°
C)
Drain to Source
Voltage V
DS
(V)
Reverse Drain
Current vs.
Source to Drain
Voltage
V
GS
(V)
20
50
Dynamic
Input Characteristics
V
DS
(V)
50
V
GS
V
DD
=
25
V
10
V
16
Reverse Drain
Current I
DR
(A)
I
D
=
50 A
Pulse
Test
10
V
40
4.5 V
40
Drain to Source
Voltage
30
V
DS
12
Gate to Source
Voltage
30
20
8
20
V
GS
=
0,
–5 V
10
V
DD
=
25
V
10
V
0
20
40
60
80
4
10
0
0
100
0
0.4
0.8
1.2
1.6
2.0
Gate
Charge
Qg
(nc)
Source to Drain
Voltage V
SD
(V)
Maximum
Avalanche
Energy vs.
Channel Temperature
Derating
Repetitive Avalanche
Energy E
AR
(mJ)
100
I
AP
=
25 A
V
DD
=
15
V
duty
<
0.1
%
Rg
≥
50
Ω
80
60
40
20
0
25
50
75
100
125
150
Channel Temperature Tch
(°C)
REJ03G1824-0200 Rev.2.00 Sep 29, 2009
Page 4 of 6
RJK0391DPA
Normalized Transient Thermal Impedance vs.
Pulse Width
Normalized Transient Thermal Impedance
γ
s
(t)
3
Preliminary
1
D
=
1
0.5
0.3
0.2
0.1
0
.1
θch
–
c (t)
=
γ
s
(t)
•
θch
–
c
θch
–
c
=
2.5°C/W,
Tc =
25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D
=
PW
T
0
.
05
0.03
2
0
.
0
ls
e
1
t
p
u
0
.
0
h
o
1
s
0.01
10
μ
100
μ
Pulse Width PW (s)
Avalanche
Test Circuit
Avalanche Waveform
1
2
L
•
I
AP2
•
V
DSS
V
DSS
– V
DD
V
(BR)DSS
I
AP
V
DD
V
DS
V
DS
Monitor
L
I
AP
Monitor
E
AR
=
Rg
D.
U. T
I
D
Vin
15
V
50
Ω
0
V
DD
Switching
Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
=
10
V
Vin
Vout
Vin
10
V
Vout
Monitor
Switching
Time
Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
t
f
REJ03G1824-0200 Rev.2.00 Sep 29, 2009
Page 5 of 6
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