Preliminary
RJH60F5DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
•
High speed switching
•
Low on-state voltage
•
Fast recovery diode
REJ03G1836-0100
Rev.1.00
Oct 13, 2009
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW
≤
5
μs,
duty cycle
≤
1%
Symbol
V
CES
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
(peak)
Note2
P
C
θj-c
θj-c
Tj
Tstg
Ratings
600
±30
80
40
160
100
260.4
0.48
2.0
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
REJ03G1836-0100 Rev.1.00 Oct 13, 2009
Page 1 of 6
RJH60F5DPK
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
t
d(on)
t
r
t
d(off)
t
f
V
ECF1
V
ECF2
t
rr
Min
⎯
⎯
4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
1.37
1.7
2880
122
47
40
35
80
80
1.6
1.8
140
Max
100
±1
8
1.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2.1
⎯
⎯
Unit
μA
μA
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
V
ns
Test Conditions
V
CE
= 600V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10V, I
C
= 1 mA
I
C
= 40 A, V
GE
= 15V
Note3
I
C
= 80 A, V
GE
= 15V
Note3
V
CE
= 25 V
V
GE
= 0 V
f = 1 MHz
I
C
= 30 A, Resistive Load
V
CC
= 300 V
V
GE
= 15 V
Note3
Rg = 5
Ω
I
F
= 20 A
I
F
= 40 A
Note3
Note3
C-E diode forward voltage
C-E diode reverse recovery time
Notes: 3. Pulse test
I
F
= 20 A
di
F
/dt = 100 A/μs
REJ03G1836-0100 Rev.1.00 Oct 13, 2009
Page 2 of 6
RJH60F5DPK
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
160
Typical Output Characteristics
Pulse Test
Ta = 25
°
C
120
13 V
15 V
80
8V
40
V
GE
= 7.4 V
0
9V
10 V
8.6 V
Collector Current I
C
(A)
100
PW
=
10
μ
s
10
1
Tc = 25°C
Single pulse
10
100
1000
0.1
1
Collector Current I
C
(A)
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
160
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
10
s
0
μ
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
4
Pulse Test
Ta = 25
°
C
3
Collector Current I
C
(A)
Pulse TestV
V
CE
= 10
Ta = 25
°
C
Pulse Test
120
80
Tc = 75°C
40
25°C
–25°C
0
0
2
4
6
8
10
2
1
I
C
= 20 A
0
0
4
8
12
16
20
40 A
80 A
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
7
6
5
4
3
2
1
0
−25
V
CE
= 10 V
Pulse Test
0
25
50
75
100 125 150
1 mA
I
C
= 10 mA
2.4
2.0
1.6
1.2
0.8
0.4
0
−25
I
C
= 80 A
40 A
20 A
V
GE
= 15 V
Pulse Test
0
25
50
75
100 125 150
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
Junction Temparature Tj (
°
C)
Junction Temparature Tj (
°
C)
REJ03G1836-0100 Rev.1.00 Oct 13, 2009
Page 3 of 6
RJH60F5DPK
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage (Typical)
10000
V
GE
= 0 V
Pulse Test
Ta = 25
°
C
V
GE
= 0 V
f = 1 MHz
Forward Current vs. Forward Voltage (Typical)
100
Forward Current I
F
(A)
Cies
Capacitance C (pF)
80
1000
60
40
100
Coes
Ta = 25
°
C
Cres
100
150
200
250
300
20
0
0
1
2
3
4
5
10
0
50
C-E Diode Forward Voltage V
CEF
(V)
Collector to Emitter Voltage V
CE
(V)
Dynamic Input Characteristics (Typical)
Collector to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
800
I
C
= 40 A
Ta = 25
°
C
V
CE
V
GE
16
1000
Switching Characteristics (Typical) (1)
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25
°
C
tf
td(off)
td(on)
10
tr
600
12
V
CE
= 600 V
300 V 8
Switching Time t (ns)
100
400
200
V
CE
= 600 V
300 V
0
0
20
40
60
80
4
0
100
1
1
10
100
1000
Gate Charge Qg (nc)
Collector Current I
C
(A)
Switching Characteristics (Typical) (2)
10000
I
C
= 40 A, R
L
= 7.5
Ω
V
GE
= 15 V, Ta = 25
°
C
Switching Characteristics (Typical) (3)
1000
I
C
= 40 A, R
L
= 7.5
Ω
V
GE
= 15 V
Switching Time t (ns)
1000
td(off)
tf
100
Switching Time t (ns)
tf
100
td(off)
tr
td(on)
tr
10
1
10
td(on)
10
100
0
20
40
60
80
100 120 140
Gate Resistance Rg (Ω)
Case Temperature Tc (°C)
REJ03G1836-0100 Rev.1.00 Oct 13, 2009
Page 4 of 6
RJH60F5DPK
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
Preliminary
Normalized Transient Thermal Impedance
γ
s (t)
10
Tc = 25°C
1
D=1
0.5
0.2
0.1
0.05
θ
j – c(t) =
γs
(t) •
θ
j – c
θ
j – c = 0.48
°C/W,
Tc = 25°C
P
DM
D=
PW
T
1m
10 m
100 m
1
10
PW
T
0.1
0.02 0.01 1 shot pulse
0.01
10
μ
100
μ
Pulse Width
PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
Normalized Transient Thermal Impedance
γ
s (t)
10
Tc = 25°C
1
D=1
0.5
0.2
0.1
0.1
0.05
2
0.0
0.01
1 shot pulse
θ
j – c(t) =
γs
(t) •
θ
j – c
θ
j – c = 2°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D=
PW
T
0.01
10
μ
100
μ
Pulse Width
Switching Time Test Circuit
Ic Monitor
R
L
Vin Monitor
PW (s)
Waveform
90%
Vin
10%
90%
90%
Rg
Vin = 15 V
D.U.T.
V
CC
Ic
td(on)
ton
10%
tr
10%
td(off)
toff
tf
REJ03G1836-0100 Rev.1.00 Oct 13, 2009
Page 5 of 6
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