Preliminary
RJH60F4DPK
Silicon N Channel IGBT
High Speed Power Switching
Features
•
High speed switching
•
Low on-state voltage
•
Fast recovery diode
REJ03G1835-0100
Rev.1.00
Oct 13, 2009
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW
≤
5
μs,
duty cycle
≤
1%
Symbol
V
CES
V
GES
I
C Note1
I
C Note1
ic(peak)
Note1
i
DF
(peak)
Note2
P
C
θj-c
Tj
Tstg
Ratings
600
±30
60
30
120
100
235.8
0.53
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
REJ03G1835-0100 Rev.1.00 Oct 13, 2009
Page 1 of 6
RJH60F4DPK
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
t
d(on)
t
r
t
d(off)
t
f
V
ECF1
V
ECF2
t
rr
Min
⎯
⎯
4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ
⎯
⎯
⎯
1.4
1.7
1945
93
33
30
32
65
80
1.6
1.8
140
Max
100
±1
8
1.82
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2.1
⎯
⎯
Unit
μA
μA
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
V
ns
Test Conditions
V
CE
= 600V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10V, I
C
= 1 mA
I
C
= 30 A, V
GE
= 15V
Note3
I
C
= 60 A, V
GE
= 15V
Note3
V
CE
= 25 V
V
GE
= 0 V
f = 1 MHz
I
C
= 30 A, Resistive Load
V
CC
= 300V
V
GE
= 15V
Note3
Rg = 5
Ω
I
F
= 20 A
Note3
I
F
= 40 A
Note3
I
F
= 20 A
di
F
/dt = 100 A/μs
C-E diode forward voltage
C-E diode reverse recovery time
Notes: 3. Pulse test
REJ03G1835-0100 Rev.1.00 Oct 13, 2009
Page 2 of 6
RJH60F4DPK
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
120
Typical Output Characteristics
Ta = 25
°
C
Pulse Test
12 V
15 V
11 V
10 V
Collector Current I
C
(A)
Collector Current I
C
(A)
100
10
PW
100
80
60
μ
s
9.5 V
10
=
10
0
μ
s
1
9V
40
20
0
8.5 V
0.1
Ta = 25
°
C
1 shot pulse
1
10
100
1000
V
GE
= 8 V
0
1
2
3
4
5
0.01
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
120
V
CE
= 10 V
Pulse Test
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
3.0
Ta = 25
°
C
Pulse Test
2.4
30 A
60 A
Collector Current I
C
(A)
100
80
60
40
1.8
Tc = 75°C
1.2
I
C
= 15 A
25°C
20
0
0
–25°C
2
4
6
8
10
0.6
0
0
4
8
12
16
20
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
2.4
2.0
1.6
1.2
0.8
0.4
0
−25
V
GE
= 15 V
Pulse Test
I
C
= 60 A
30 A
15 A
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Case Temperature (Typical)
8
7
6
5
4
3
2
1
0
-25
0
25
50
75
100 125 150
I
C
= 10 mA
V
CE
= 10 V
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
1 mA
0
25
50
75
100 125 150
Junction Temparature Tj (
°
C)
Junction Temperature
Tj (°C)
REJ03G1835-0100 Rev.1.00 Oct 13, 2009
Page 3 of 6
RJH60F4DPK
Collector to Emitter Diode Forward Voltage vs.
Diode Forward Current Characteristics (Typical)
100
10000
V
GE
= 0 V
Pulse Test
Preliminary
Typical Capacitance vs.
Colloctor to Emitter Voltage
Diode Forward Current I
F
(A)
Cies
Capacitance C (pF)
80
1000
60
100
Coes
10
V
GE
= 0 V
f = 1 MHz
Ta = 25
°
C
0
50
100
150
200
250
300
Cres
40
20
0
0
1
2
3
4
5
1
Collector to Emitter Diode
Forward Voltage V
ECF
(V)
Dynamic Input Characteristics (Typical)
Colloctor to Emitter Voltage V
CE
(V)
Gate to Emitter Voltage V
GE
(V)
800
V
GE
V
CE
V
CE
= 600 V
300 V
16
Colloctor to Emitter Voltage V
CE
(V)
Switching Characteristics (Typical) (1)
1000
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Ta = 25
°
C
100
tf
td(off)
td(on)
10
tr
600
12
400
8
200
V
CE
= 600 V
300 V
0
0
20
40
60
4
I
C
= 30 A
80
Switching Time t (ns)
0
100
1
1
10
100
1000
Gate Charge Qg (nC)
Colloctor Current I
C
(A)
Switching Characteristics (Typical) (2)
1000
I
C
= 30 A, R
L
= 10
Ω
V
GE
= 15 A, Ta = 25
°
C
Switching Characteristics (Typical) (3)
1000
I
C
= 30 A, V
GE
= 15 A
R
L
= 10
Ω,
Rg = 5
Ω
Switching Time t (ns)
Switching Time t (ns)
100
tf
td(off)
td(on)
100
tf
tr
td(off)
td(on)
tr
10
1
10
100
10
0
20
40
60
80
100 120 140
Gate Resistance Rg (Ω)
Case Temperature Tc (
°
C)
REJ03G1835-0100 Rev.1.00 Oct 13, 2009
Page 4 of 6
RJH60F4DPK
Normalized Transient Thermal Impedance vs. Pulse Width (IGBT)
Preliminary
Normalized Transient Thermal Impedance
γ
s (t)
10
Tc = 25°C
1
D=1
0.5
0.2
0.1
0.05
θj −
c(t) =
γs
(t) •
θj −
c
θj −
c = 0.53 °C/W, Tc = 25 °C
P
DM
PW
T
D=
PW
T
0.1
1 shot pulse
0.02
0.01
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width
PW (s)
Normalized Transient Thermal Impedance vs. Pulse Width (Diode)
Normalized Transient Thermal Impedance
γ
s (t)
10
Tc = 25°C
1
D=1
0.5
0.2
0.1
0.1
0.05
2
0.0
0.01
1 shot pulse
θj
– c(t) =
γs
(t) •
θj
– c
θj
– c = 2°C/W, Tc = 25°C
P
DM
PW
T
1m
10 m
100 m
1
10
D=
PW
T
0.01
10
μ
100
μ
Pulse Width
Switching Time Test Circuit
Ic Monitor
R
L
Vin Monitor
PW (s)
Waveform
90%
Vin
10%
90%
90%
Rg
Vin = 15 V
D.U.T.
V
CC
Ic
td(on)
ton
10%
tr
10%
td(off)
toff
tf
REJ03G1835-0100 Rev.1.00 Oct 13, 2009
Page 5 of 6
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