IC 8K X 8 OTPROM, 45 ns, CQCC28, CERAMIC, LLCC-28, Programmable ROM
参数名称 | 属性值 |
厂商名称 | NXP(恩智浦) |
零件包装代码 | QLCC |
包装说明 | QCCN, |
针数 | 28 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
最长访问时间 | 45 ns |
JESD-30 代码 | S-CQCC-N28 |
长度 | 11.43 mm |
内存密度 | 65536 bit |
内存集成电路类型 | OTP ROM |
内存宽度 | 8 |
功能数量 | 1 |
端子数量 | 28 |
字数 | 8192 words |
字数代码 | 8000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 125 °C |
最低工作温度 | -55 °C |
组织 | 8KX8 |
输出特性 | 3-STATE |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装代码 | QCCN |
封装形状 | SQUARE |
封装形式 | CHIP CARRIER |
并行/串行 | PARALLEL |
认证状态 | Not Qualified |
座面最大高度 | 1.905 mm |
最大供电电压 (Vsup) | 5.5 V |
最小供电电压 (Vsup) | 4.5 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | YES |
技术 | BIPOLAR |
温度等级 | MILITARY |
端子形式 | NO LEAD |
端子节距 | 1.27 mm |
端子位置 | QUAD |
宽度 | 11.43 mm |
Base Number Matches | 1 |
82HS641B/B3A | 82HS641A/B3A | 82HS641A/BJA | 82HS641B/BJA | 5962-8200902JA | |
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描述 | IC 8K X 8 OTPROM, 45 ns, CQCC28, CERAMIC, LLCC-28, Programmable ROM | IC 8K X 8 OTPROM, 55 ns, CQCC28, CERAMIC, LLCC-28, Programmable ROM | IC 8K X 8 OTPROM, 55 ns, CDIP24, 0.600 INCH, CERAMIC, DIP-24, Programmable ROM | IC 8K X 8 OTPROM, 45 ns, CDIP24, 0.600 INCH, CERAMIC, DIP-24, Programmable ROM | IC 8K X 8 OTPROM, 55 ns, CDIP24, 0.600 INCH, CERAMIC, DIP-24, Programmable ROM |
厂商名称 | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) |
零件包装代码 | QLCC | QLCC | DIP | DIP | DIP |
包装说明 | QCCN, | QCCN, | DIP, | DIP, | DIP, |
针数 | 28 | 28 | 24 | 24 | 24 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最长访问时间 | 45 ns | 55 ns | 55 ns | 45 ns | 55 ns |
JESD-30 代码 | S-CQCC-N28 | S-CQCC-N28 | R-GDIP-T24 | R-GDIP-T24 | R-GDIP-T24 |
内存密度 | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
内存集成电路类型 | OTP ROM | OTP ROM | OTP ROM | OTP ROM | OTP ROM |
内存宽度 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 28 | 28 | 24 | 24 | 24 |
字数 | 8192 words | 8192 words | 8192 words | 8192 words | 8192 words |
字数代码 | 8000 | 8000 | 8000 | 8000 | 8000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
组织 | 8KX8 | 8KX8 | 8KX8 | 8KX8 | 8KX8 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
封装代码 | QCCN | QCCN | DIP | DIP | DIP |
封装形状 | SQUARE | SQUARE | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | CHIP CARRIER | CHIP CARRIER | IN-LINE | IN-LINE | IN-LINE |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 1.905 mm | 1.905 mm | 5.715 mm | 5.715 mm | 5.715 mm |
最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | YES | YES | NO | NO | NO |
技术 | BIPOLAR | BIPOLAR | BIPOLAR | BIPOLAR | BIPOLAR |
温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
端子形式 | NO LEAD | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子节距 | 1.27 mm | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm |
端子位置 | QUAD | QUAD | DUAL | DUAL | DUAL |
宽度 | 11.43 mm | 11.43 mm | 15.24 mm | 15.24 mm | 15.24 mm |
Base Number Matches | 1 | 1 | 1 | 1 | 1 |
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