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IDT70V35L20PFGI: 产品描述Dual-Port SRAM, 8KX18, 20ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQFP-100; 产品类别存储存储; 文件大小207KB，共25页; 制造商IDT (Integrated Device Technology); 标准

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IDT70V35L20PFGI概述

Dual-Port SRAM, 8KX18, 20ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQFP-100

IDT70V35L20PFGI规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	IDT (Integrated Device Technology)
零件包装代码	QFP
包装说明	LFQFP, QFP100,.63SQ,20
针数	100
Reach Compliance Code	compliant
ECCN代码	EAR99
最长访问时间	20 ns
I/O 类型	COMMON
JESD-30 代码	S-PQFP-G100
JESD-609代码	e3
长度	14 mm
内存密度	147456 bit
内存集成电路类型	DUAL-PORT SRAM
内存宽度	18
湿度敏感等级	3
功能数量	1
端口数量	2
端子数量	100
字数	8192 words
字数代码	8000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	8KX18
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	LFQFP
封装等效代码	QFP100,.63SQ,20
封装形状	SQUARE
封装形式	FLATPACK, LOW PROFILE, FINE PITCH
并行/串行	PARALLEL
峰值回流温度（摄氏度）	260
电源	3.3 V
认证状态	Not Qualified
座面最大高度	1.6 mm
最大待机电流	0.005 A
最小待机电流	3 V
最大压摆率	0.195 mA
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Matte Tin (Sn) - annealed
端子形式	GULL WING
端子节距	0.5 mm
端子位置	QUAD
处于峰值回流温度下的最长时间	30
宽度	14 mm
Base Number Matches	1

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HIGH-SPEED 3.3V

8/4K x 18 DUAL-PORT

8/4K x 16 DUAL-PORT

STATIC RAM

Features

◆

IDT70V35/34S/L

IDT70V25/24S/L

◆

True Dual-Ported memory cells which allow simultaneous

reads of the same memory location

High-speed access

IDT70V35/34

– Commercial: 15/20/25ns (max.)

– Industrial: 20ns

IDT70V25/24

– Commercial: 15/20/25/35/55ns (max.)

– Industrial: 20/25ns

Low-power operation

– IDT70V35/34S

– IDT70V35/34L

Active: 430mW (typ.)

Active: 415mW (typ.)

Standby: 3.3mW (typ.)

Standby: 660

W (typ.)

– IDT70V25/24S

Active: 400mW (typ.)

Standby: 3.3mW (typ.)

– IDT70V25/24L

Active: 380mW (typ.)

Standby: 660

W (typ.)

◆

Separate upper-byte and lower-byte control for multiplexed

bus compatibility

IDT70V35/34 (IDT70V25/24) easily expands data bus width

to 36 bits (32 bits) or more using the Master/Slave select

when cascading more than one device

M/S = V

for

BUSY

output flag on Master

M/S = V

for

BUSY

input on Slave

BUSY

and Interrupt Flag

On-chip port arbitration logic

Full on-chip hardware support of semaphore signaling

between ports

Fully asynchronous operation from either port

LVTTL-compatible, single 3.3V (±0.3V) power supply

Available in a 100-pin TQFP (IDT70V35/24) & (IDT70V25/24),

86-pin PGA (IDT70V25/24) and 84-pin PLCC (IDT70V25/24)

Industrial temperature range (-40°C to +85°C) is available

for selected speeds

Green parts available, see ordering information

Functional Block Diagram

R/W

I/O

-I/O

17L

(5)

I/O

Control

I/O

-I/O

(4)

BUSY

(2,3)

I/O

-I/O

17R

(5)

I/O

Control

I/O

-I/O

(4)

BUSY

(2,3)

Address

Decoder

12L

(1)

MEMORY

ARRAY

Address

Decoder

12R

(1)

R/W

SEM

INT

(3)

ARBITRATION

INTERRUPT

SEMAPHORE

LOGIC

R/W

SEM

INT

(3)

5624 drw 01

M/S

NOTES:

1. A

is a NC for IDT70V34 and for IDT70V24.

2. (MASTER):

BUSY

is output; (SLAVE):

BUSY

is input.

BUSY

outputs and

INT

outputs are non-tri-stated push-pull.

4. I/O

x - I/O

x for IDT70V25/24.

5. I/O

x - I/O

x for IDT70V25/24.

OCTOBER 2008

DSC-5624/7

IDT70V35L20PFGI相似产品对比

	IDT70V35L20PFGI	IDT70V3579S4BFG	IDT70V24S55PFG	IDT70V24L55PFI	IDT70V25S35PFG	IDT70V25S25PFGI	IDT70V24L35PFG
描述	Dual-Port SRAM, 8KX18, 20ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQFP-100	Dual-Port SRAM, 32KX36, 4.2ns, CMOS, PBGA208, 15 X 15 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, GREEN, MO-205EAG, FBGA-208	Dual-Port SRAM, 4KX16, 55ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQFP-100	Dual-Port SRAM, 4KX16, 55ns, CMOS, PQFP100, TQFP-100	Dual-Port SRAM, 8KX16, 35ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQFP-100	Dual-Port SRAM, 8KX16, 25ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQFP-100	Dual-Port SRAM, 4KX16, 35ns, CMOS, PQFP100, 14 X 14 MM, 1.40 MM HEIGHT, GREEN, PLASTIC, TQFP-100
是否无铅	不含铅	不含铅	不含铅	含铅	不含铅	不含铅	不含铅
是否Rohs认证	符合	符合	符合	不符合	符合	符合	符合
厂商名称	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)
零件包装代码	QFP	BGA	QFP	QFP	QFP	QFP	QFP
包装说明	LFQFP, QFP100,.63SQ,20	LFBGA, BGA208,17X17,32	LFQFP, QFP100,.63SQ,20	TQFP-100	LFQFP, QFP100,.63SQ,20	LFQFP, QFP100,.63SQ,20	LFQFP, QFP100,.63SQ,20
针数	100	208	100	100	100	100	100
Reach Compliance Code	compliant	compliant	compliant	not_compliant	compliant	compliant	compliant
ECCN代码	EAR99	3A991.B.2.A	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	20 ns	4.2 ns	55 ns	55 ns	35 ns	25 ns	35 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	S-PQFP-G100	S-PBGA-B208	S-PQFP-G100	S-PQFP-G100	S-PQFP-G100	S-PQFP-G100	S-PQFP-G100
JESD-609代码	e3	e1	e3	e0	e3	e3	e3
长度	14 mm	15 mm	14 mm	14 mm	14 mm	14 mm	14 mm
内存密度	147456 bit	1179648 bit	65536 bit	65536 bit	131072 bit	131072 bit	65536 bit
内存集成电路类型	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM	DUAL-PORT SRAM
内存宽度	18	36	16	16	16	16	16
湿度敏感等级	3	3	3	3	3	3	3
功能数量	1	1	1	1	1	1	1
端口数量	2	2	2	2	2	2	2
端子数量	100	208	100	100	100	100	100
字数	8192 words	32768 words	4096 words	4096 words	8192 words	8192 words	4096 words
字数代码	8000	32000	4000	4000	8000	8000	4000
工作模式	ASYNCHRONOUS	SYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	70 °C	70 °C	85 °C	70 °C	85 °C	70 °C
组织	8KX18	32KX36	4KX16	4KX16	8KX16	8KX16	4KX16
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LFQFP	LFBGA	LFQFP	LFQFP	LFQFP	LFQFP	LFQFP
封装等效代码	QFP100,.63SQ,20	BGA208,17X17,32	QFP100,.63SQ,20	QFP100,.63SQ,20	QFP100,.63SQ,20	QFP100,.63SQ,20	QFP100,.63SQ,20
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	FLATPACK, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH	FLATPACK, LOW PROFILE, FINE PITCH
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
峰值回流温度（摄氏度）	260	260	260	240	260	260	260
电源	3.3 V	2.5/3.3,3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.6 mm	1.7 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm	1.6 mm
最小待机电流	3 V	3.15 V	3 V	3 V	3 V	3 V	3 V
最大压摆率	0.195 mA	0.46 mA	0.18 mA	0.17 mA	0.18 mA	0.19 mA	0.155 mA
最大供电电压 (Vsup)	3.6 V	3.45 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3.15 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	COMMERCIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL
端子面层	Matte Tin (Sn) - annealed	Tin/Silver/Copper (Sn/Ag/Cu)	Matte Tin (Sn) - annealed	Tin/Lead (Sn85Pb15)	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed	Matte Tin (Sn) - annealed
端子形式	GULL WING	BALL	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.5 mm	0.8 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm	0.5 mm
端子位置	QUAD	BOTTOM	QUAD	QUAD	QUAD	QUAD	QUAD
处于峰值回流温度下的最长时间	30	30	30	20	30	30	30
宽度	14 mm	15 mm	14 mm	14 mm	14 mm	14 mm	14 mm
最大待机电流	0.005 A	-	0.005 A	0.005 A	0.005 A	0.005 A	0.0025 A
Base Number Matches	1	1	1	1	1	-	-

IDT70V35L20PFGI

IDT70V35L20PFGI概述

IDT70V35L20PFGI规格参数

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IDT70V35L20PFGI相似产品对比

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