电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

IDT72805LB25BG

产品描述FIFO, 256X18, 15ns, Synchronous, CMOS, PBGA121, 16 X 16 MM, PLASTIC, BGA-121
产品类别存储    存储   
文件大小199KB,共20页
制造商IDT (Integrated Device Technology)
下载文档 详细参数 选型对比 全文预览

IDT72805LB25BG概述

FIFO, 256X18, 15ns, Synchronous, CMOS, PBGA121, 16 X 16 MM, PLASTIC, BGA-121

IDT72805LB25BG规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
零件包装代码BGA
包装说明LGA, BGA121,11X11,50
针数121
Reach Compliance Codenot_compliant
ECCN代码EAR99
最长访问时间15 ns
最大时钟频率 (fCLK)40 MHz
周期时间25 ns
JESD-30 代码S-PBGA-N121
JESD-609代码e0
长度15 mm
内存密度4608 bit
内存集成电路类型OTHER FIFO
内存宽度18
湿度敏感等级3
功能数量1
端子数量121
字数256 words
字数代码256
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织256X18
输出特性3-STATE
可输出YES
封装主体材料PLASTIC/EPOXY
封装代码LGA
封装等效代码BGA121,11X11,50
封装形状SQUARE
封装形式GRID ARRAY
并行/串行PARALLEL
峰值回流温度(摄氏度)225
电源5 V
认证状态Not Qualified
最大待机电流0.01 A
最大压摆率0.1 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式NO LEAD
端子节距1.27 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度15 mm
Base Number Matches1

文档预览

下载PDF文档
CMOS DUAL SyncFIFO™
DUAL 256 x 18, DUAL 512 x 18,
DUAL 1024 x 18
Integrated Device Technology, Inc.
IDT72805LB
IDT72815LB
IDT72825LB
FEATURES:
• The 72805 is equivalent to two 72205LB 256 x 18
FIFOs
• The 72815 is equivalent to two 72215LB 512 x 18
FIFOs
• The 72825 is equivalent to two 72225LB 1024 x 18
FIFOs
• Offers optimal combination of large capacity (2K), high
speed, design flexibility, and small footprint
• Ideal for the following applications:
- Network switching
- Two level prioritization of parallel data
- Bidirectional data transfer
- Busmatching between 18-bit and 36-bit data paths
- Width expansion to 36-bit per package
- Depth expansion to 2048 words per package
• 20ns read/write cycle time, 12ns access time
• Read and write clocks can be asynchronous or coinci-
dent (permits simultaneous reading and writing of data
on a single clock edge)
• Programmable almost-empty and almost-full flags
• Empty and Full flags signal FIFO status
• Half-Full flag capability in single device configuration
• Enable puts output data bus in high impedance state
• High-performance submicron CMOS technology
• Available in a 121-lead, 16 x 16 mm plastic Ball Grid
Array (BGA)
• Industrial temperature range (-40
o
C to +85
o
C) is avail-
able, tested to military electrical specifications
DESCRIPTION:
The IDT72805LB/72815LB/72825LB are dual 18-bit-wide
synchronous (clocked) first-in, first-out (FIFO) memories.
These devices are functionally equivalent to two IDT72205LB/
72215LB/72225LB FIFOs in a single package with all associ-
ated control, data, and flag lines assigned to independent
pins. These FIFOs are applicable for a wide variety of data
buffering needs, such as optical disk controllers, local area
networks (LANs), and interprocessor communication.
Each of the two FIFOs contained in the IDT72805LB/
72815LB/72825LB has an 18-bit input data port (D0 - D17)
and an 18-bit output data port (Q0 - Q17). Each input port is
controlled by a free-running Write Clock (WCLK) and a data
input Write Enable pin (
WEN
). Data is written into each array
on every rising clock edge of the appropriate Write Clock
(WCLK) when its corresponding Write Enable line (
WEN
) is
asserted.
FFA
FUNCTIONAL BLOCK DIAGRAM
WCLKA
WENA
DA
0
-DA
17
HFA
/(
WXOA
)
PAEA
EFA
WCLKB
PAFA
LDA
WENB
DB0-DB17
LDB
• •
WRITE
CONTROL
LOGIC
WRITE
POINTER
INPUT
REGISTER
OFFSET
REGISTER
• •
WRITE
CONTROL
LOGIC
INPUT
REGISTER
OFFSET
REGISTER
RAM
ARRAY
256 x 18
512 x 18
1024 x 18
FLAG
LOGIC
READ
POINTER
READ
CONTROL
LOGIC
FLA
WXIA
(
HFA
)/
WXOA
RXIA
RXOA
RSA
WRITE
POINTER
RAM
ARRAY
256 x 18
512 x 18
1024 x 18
FLAG
LOGIC
FFB
PAFB
EFB
PAEB
HFB
/
(
WXOB
)
READ
POINTER
READ
CONTROL
LOGIC
EXPANSION
LOGIC
OUTPUT
REGISTER
• •
EXPANSION
LOGIC
OUTPUT
REGISTER
RESET
LOGIC
RESET
LOGIC
OEA
QA
0
-QA
17
RCLKA
RSB
RXOB
RENA
RXIB
(
HFB
)/
WXOB
WXIB
FLB
OEB
RCLKB
QB
0
-QB
17
RENB
3139 drw 01
The IDT logo is a registered trademark, and SyncFIFO is a trademark of Integrated Device Technology, Inc.
COMMERCIAL TEMPERATURE RANGE
©1996
Integrated Device Technology, Inc
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-839
DECEMBER 1996
DSC-3139/2
5.17
1

IDT72805LB25BG相似产品对比

IDT72805LB25BG IDT72815LB35BG IDT72815LB20BG IDT72805LB35BG IDT72805LB20BG IDT72825LB35BG IDT72825LB20BG IDT72815LB25BG
描述 FIFO, 256X18, 15ns, Synchronous, CMOS, PBGA121, 16 X 16 MM, PLASTIC, BGA-121 FIFO, 1KX18, 20ns, Synchronous, CMOS, PBGA121, 16 X 16 MM, PLASTIC, BGA-121 FIFO, 1KX18, 12ns, Synchronous, CMOS, PBGA121, 16 X 16 MM, PLASTIC, BGA-121 FIFO, 512X18, 20ns, Synchronous, CMOS, PBGA121, 16 X 16 MM, PLASTIC, BGA-121 FIFO, 512X18, 12ns, Synchronous, CMOS, PBGA121, 16 X 16 MM, PLASTIC, BGA-121 FIFO, 2KX18, 20ns, Synchronous, CMOS, PBGA121, 16 X 16 MM, PLASTIC, BGA-121 FIFO, 2KX18, 12ns, Synchronous, CMOS, PBGA121, 16 X 16 MM, PLASTIC, BGA-121 FIFO, 512X18, 15ns, Synchronous, CMOS, PBGA121, 16 X 16 MM, PLASTIC, BGA-121
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
零件包装代码 BGA BGA BGA BGA BGA BGA BGA BGA
包装说明 LGA, BGA121,11X11,50 LGA, BGA121,11X11,50 LGA, BGA121,11X11,50 LGA, BGA121,11X11,50 LGA, BGA121,11X11,50 LGA, BGA121,11X11,50 LGA, BGA121,11X11,50 16 X 16 MM, PLASTIC, BGA-121
针数 121 121 121 121 121 121 121 121
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最长访问时间 15 ns 20 ns 12 ns 20 ns 12 ns 20 ns 12 ns 15 ns
最大时钟频率 (fCLK) 40 MHz 28.6 MHz 50 MHz 28.6 MHz 50 MHz 28.6 MHz 50 MHz 40 MHz
周期时间 25 ns 35 ns 20 ns 35 ns 20 ns 35 ns 20 ns 25 ns
JESD-30 代码 S-PBGA-N121 S-PBGA-N121 S-PBGA-N121 S-PBGA-N121 S-PBGA-N121 S-PBGA-N121 S-PBGA-N121 S-PBGA-N121
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0
长度 15 mm 15 mm 15 mm 15 mm 15 mm 15 mm 15 mm 15 mm
内存密度 4608 bit 18432 bit 18432 bit 9216 bit 9216 bit 36864 bit 36864 bit 9216 bit
内存集成电路类型 OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO OTHER FIFO
内存宽度 18 18 18 18 18 18 18 18
功能数量 1 1 1 1 1 1 1 1
端子数量 121 121 121 121 121 121 121 121
字数 256 words 1024 words 1024 words 512 words 512 words 2048 words 2048 words 512 words
字数代码 256 1000 1000 512 512 2000 2000 512
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 256X18 1KX18 1KX18 512X18 512X18 2KX18 2KX18 512X18
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
可输出 YES YES YES YES YES YES YES YES
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LGA LGA LGA LGA LGA LGA LGA LGA
封装等效代码 BGA121,11X11,50 BGA121,11X11,50 BGA121,11X11,50 BGA121,11X11,50 BGA121,11X11,50 BGA121,11X11,50 BGA121,11X11,50 BGA121,11X11,50
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY GRID ARRAY
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
电源 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大待机电流 0.01 A 0.08 A 0.01 A 0.08 A 0.01 A 0.08 A 0.01 A 0.01 A
最大压摆率 0.1 mA 0.25 mA 0.1 mA 0.25 mA 0.1 mA 0.25 mA 0.1 mA 0.1 mA
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
宽度 15 mm 15 mm 15 mm 15 mm 15 mm 15 mm 15 mm 15 mm
厂商名称 IDT (Integrated Device Technology) - - IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology) IDT (Integrated Device Technology)
座面最大高度 - 1.97 mm 1.97 mm 1.97 mm 1.97 mm 1.97 mm 1.97 mm -

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2927  553  635  1737  696  59  12  13  35  15 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved