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RE46C128

产品描述CMOS Ionization Smoke Detector ASIC with Interconnect
文件大小165KB,共8页
制造商Microchip(微芯科技)
官网地址https://www.microchip.com
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RE46C128概述

CMOS Ionization Smoke Detector ASIC with Interconnect

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R&E International
A Subsidiary of Microchip Technology Inc.
RE46C128
CMOS Ionization Smoke Detector ASIC with Interconnect
Product Specification
General Description
The RE46C128 is low power CMOS ionization type
smoke detector IC. With few external components this
circuit will provide all the required features for an
ionization type smoke detector.
An internal oscillator strobes power to the smoke
detection circuitry for 10.5mS every 1.66 seconds to
keep standby current to a minimum. A check for a low
battery condition is performed every 40 seconds when
in standby. The temporal horn pattern supports the
NFPA 72 emergency evacuation signal.
An interconnect pin allows multiple detectors to be
connected such that when one units alarms all units will
sound.
Although this device was designed for smoke detection
utilizing an ionization chamber it could be used in a
variety of security applications.
Utilizing low power CMOS technology the RE46C128
was designed for use in smoke detectors that comply
with Underwriters Laboratory Specification UL217 and
UL268.
Features
>1500V ESD Protection (HBM) on all Pins
Guard Outputs for Ion Detector Input
+/-0.75pA Detect Input Current
Internal Reverse Battery Protection
Low Quiescent Current Consumption (<6.5uA)
Available in 16L PDIP or 16L N SOIC
Internal Low Battery Detection
Power Up Low Battery Test
Interconnect up to 40 Detectors
Compatible with Allegro A5364
Available in Standard Packaging or RoHS Compliant
Pb Free Packaging.
Pin Configuration
N/C
IO
LBADJ
N/C
LED
VDD
RBIAS
FEED
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
GUARD2
DETECT
GUARD1
VSEN
OSCAP
HS
HB
VSS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Supply Voltage
Input Voltage Range Except FEED, IO
FEED Input Voltage Range
IO Input Voltage Range
Reverse Battery Time
Input Current except FEED
Operating Temperature
Storage Temperature
Maximum Junction Temperature
SYMBOL
V
DD
V
in
V
infd
V
io1
T
RB
I
in
T
A
T
STG
T
J
VALUE
15
-.3 to V
dd
+.3
-10 to +22
-.3 to 17
5
10
-10 to 60
-55 to 125
150
UNITS
V
V
V
V
S
mA
°C
°C
°C
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only and operation at these conditions for extended periods may affect device reliability.
This product utilizes CMOS technology with static protection; however proper ESD prevention procedures should be used when
handling this product. Damage can occur when exposed to extremely high static electrical charge.
© 2009 Microchip Technology Inc.
DS22171A-page 1
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