FMA3010
FMA3010
X-BAND 5W HIGH POWER AMPLIFIER G
A
A
S
MMIC
Package Style: Bare Die
Product Description
The FMA3010 is a high performance X-Band Gallium Arsenide monolithic amplifier.
It is suitable for use in communication, instrumentation and electronic warfare
applications. The die is fabricated using RFMD’s 0.5µm process.
Features
15dB Gain
5W Saturated Output Power
at 9V
pHEMT Technology
Applications
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
VDD
Test Instrumentation
Electronic Warfare
Communication Infrastruc-
ture
RF IN
RF OUT
VG
Parameter
Electrical Specifications
Gain
Input Return Loss
Output Return Loss
Reverse Isolation
Output Saturated Power
Drain Current
Min.
Specification
Typ.
15
-10
-10
-35
37
80
Max.
Unit
dB
dB
dB
dB
dBm
mA
Condition
T
AMBIENT
=25°C, Z
0
=50Ω
9GHz to 10GHz, V
D
=9V, V
G
=-0.5V
9GHz to 10GHz, V
D
=9V, V
G
=-0.5V
9GHz to 10GHz, V
D
=9V, V
G
=-0.5V
9GHz to 10GHz, V
D
=9V, V
G
=-0.5V
Drain voltage and input power pulsed at a prf of
1kHz, 5% duty cycle. V
D
=9V, V
G
=-0.5V,
frequency=9.5GHz
Drain voltage and input power pulsed at a prf of
1kHz, 5% duty cycle. V
D
=9V, V
G
=-0.5V, input
power=0dBm
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A3 DS091124
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 12
FMA3010
Absolute Maximum Ratings
Parameter
Maximum Input Power (P
IN
)
Drain Voltage (V
DD
)
Operating Temperature (T
OPER
)
Storage Temperature (T
STOR
)
Rating
+25
+12
-40 to 85
-55 to 150
Unit
dBm
V
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
Electrical Characteristics
Typical Electrical
Characteristics on Carrier (as
per Recommended
Assembly)
Frequency Range
Drain Current at 0dBm P
IN
Small Signal Gain
Input Return Loss
Output Return Loss
Saturated Output Power at 23dBm
P
IN
and 15% Duty Cycle
Power Added Efficiency at 23dBm P
IN
and 15% Duty Cycle
Small Signal Gain Temperature Coef-
ficient at 9.0GHz, V
D
=9V
Saturated Output Power Temperature
Coefficient at 9.0GHz, V
D
=9V
Gate Current
Min.
Specification
Typ.
Max.
Unit
Condition
T
AMB
=25°C, V
DRAIN
=+9V, V
GATE
=-0.5V)
9
1.6
20
10
GHz
A
dB
dB
dB
dBm
%
-4
-4
36.5
30
-0.028
-0.01
6
-0.05
-0.015
10
dB/°C
dB/°C
mA
RF On Wafer Testing:
Electrical Die Sorting Criteria
at Controlled Ambient
Temperature 21±2°C
Small Signal RFOW
Parameters (100% Test)
(Note 1) V
D
=3V
Linear Gain at 9GHz
Linear Gain at 9.5GHz
Linear Gain at 10GHz
Input Return Loss at 9GHz
Input Return Loss 9.5GHz
Input Return Loss at 10GHz
Output Return Loss at 9GHz
Output Return Loss 9.5GHz
Output Return Loss at 10GHz
Reverse Isolation at 9GHz to 10GHz
11
14
11
18
21
20
-4
-4
-2
-6
-2.5
-1
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
31
Pulsed Large Signal
Parameters (100% test) (Note
2) V
D
=9V
Saturated Output Power at 9GHz,
P
IN
=+21dBm
Saturated Output Power at 9.5GHz,
P
IN
=+21dBm
35.5
36.0
37.2
37.2
dBm
dBm
2 of 12
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A3 DS091124
FMA3010
Parameter
Saturated Output Power at 10GHz,
P
IN
=+21dBm
Power Gain at 9GHz, P
IN
=+10dBm
Power Gain at 9.5GHz, P
IN
=+10dBm
Min.
36.0
17
17.5
Specification
Typ.
37.4
20
20.5
Max.
Unit
dBm
dB
dB
Condition
Power Gain at 10GHz, P
IN
=+10dBm
17
20
dB
Power Supply Current at 9GHz to
1.6
2.0
A
10GHz (0dBm RF Input)
Power Supply Current at 9GHz to
1.65
2.0
A
10GHz (21dBm RF Input)
Note 1: 21°C ambient temperature, 3.0V drain power supply voltage (V
DD
), -0.5V Gate Supply voltage (V
G
) ( nominal, adjustable in proportion to pinch-off
voltage variation wafer to wafer), CW small signal operation with P
IN
=-20dBm.
Note 2: 21°C ambient temperature, 9.0V drain power supply voltage (V
DD
), -0.5V Gate Supply voltage (V
G
) ( nominal, adjustable in proportion to pinch-off
voltage variation wafer to wafer), and with drain voltage modulation with 50µs pulse width, 1kHz P.R.F.
Pad Layout
Pad
A
B
C
D
E
F
G
H
Name
IN
VG
VD1
VD2
OUT
VD2
VD1
VG
Description
RF input
South gate voltage 1
South drain voltage 1
South drain voltage 2
RF output
North drain voltage 2
North drain voltage 1
North gate voltage 2
Die Size (μm)
4521x3048
Die Thickness (μm) Min. Bond Pad Pitch (μm) Min. Bond Pad Opening (μmxμm)
100
200
88x138
Rev A3 DS091124
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 12
FMA3010
Typical Performance of FMA3010 MMIC Mounted on Carrier
22.0
21.0
20.0
19.0
18.0
17.0
16.0
15.0
14.0
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
8.
50
8.
60
8.
70
8.
80
8.
90
9.
00
9.
10
9.
20
9.
30
9.
40
9.
50
9.
60
9.
70
9.8
0
9.
90
10
.0
0
10
.1
0
10
.2
0
10
.3
10 0
.4
0
10
.5
0
Frequency
Small Signal Power Gain (Including bondwire and jig losses) P
IN
=0dBm, V
D
=9V, V
G
=-0.5V 10% Duty, 10μs Pulse 30°C Sam-
ple Die #1
38.0
37.0
36.0
35.0
34.0
33.0
32.0
31.0
30.0
29.0
28.0
27.0
26.0
25.0
24.0
23.0
22.0
21.0
20.0
19.0
18.0
Power
P ow e r
E fficie n cy
Efficiency
Saturated Output Power and Efficiency (Including bondwire and jig losses) P
IN
=23dBm, V
D
=9V, V
G
=-0.5V 10% Duty, 30°C
Sample Die #1
4 of 12
8.
50
8.
60
8.
70
8.
80
8.
90
9.
00
9.
10
9.
20
9.
30
9.
40
9.
50
9.
60
9.
70
9.
80
9.
9
10 0
.0
0
10
.1
10 0
.2
10 0
.3
10 0
.4
10 0
.5
0
Fre quenc y
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A3 DS091124
FMA3010
40
35
30
25
20
15
10
2.5
Power
Efficiency
2
Pout (dBm), PAE (%)
1.5
Current
1
0.5
5
0
10
12
14
16
18
Pin (dBm)
20
22
24
26
0
Power Compression Curves and Efficiency (excluding bondwire) V
D
=9V, V
G
=-0.5V 10% Duty, 30°C Sample Die #1
Rev A3 DS091124
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
ID (A)
5 of 12
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