74HC2G86-Q100;
74HCT2G86-Q100
Dual 2-input EXCLUSIVE-OR gate
Rev. 1 — 10 March 2014
Product data sheet
1. General description
The 74HC2G86-Q100; 74HCT2G86-Q100 is a dual 2-input EXCLUSIVE-OR gate. Inputs
include clamp diodes that enable the use of current limiting resistors to interface inputs to
voltages in excess of V
CC
.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from
40 C
to +85
C
and from
40 C
to +125
C
Wide supply voltage range from 2.0 V to 6.0 V
Input levels:
For 74HC2G86-Q100: CMOS level
For 74HCT2G86-Q100: TTL level
Symmetrical output impedance
High noise immunity
Low power dissipation
Balanced propagation delays
ESD protection:
MIL-STD-883, method 3015 exceeds 2000 V
HBM JESD22-A114F exceeds 2000 V
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0
)
Multiple package options
NXP Semiconductors
74HC2G86-Q100; 74HCT2G86-Q100
Dual 2-input EXCLUSIVE-OR gate
3. Ordering information
Table 1.
Ordering information
Package
Temperature range
74HC2G86DP-Q100
74HCT2G86DP-Q100
74HC2G86DC-Q100
74HCT2G86DC-Q100
40 C
to +125
C
VSSOP8
40 C
to +125
C
Name
TSSOP8
Description
plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
plastic very thin shrink small outline package; 8
leads; body width 2.3 mm
Version
SOT505-2
SOT765-1
Type number
4. Marking
Table 2.
Marking code
Marking code
[1]
H86
T86
H86
T86
Type number
74HC2G86DP-Q100
74HCT2G86DP-Q100
74HC2G86DC-Q100
74HCT2G86DC-Q100
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
=1
1A
1B
2A
2B
1Y
2Y
=1
001aah760
001aah761
Fig 1.
Logic symbol
Fig 2.
IEC logic symbol
B
Y
A
mna040
Fig 3.
Logic diagram (one gate)
74HC_HCT2G86_Q100
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 10 March 2014
2 of 14
NXP Semiconductors
74HC2G86-Q100; 74HCT2G86-Q100
Dual 2-input EXCLUSIVE-OR gate
6. Pinning information
6.1 Pinning
Fig 4.
Pin configuration SOT505-2 (TSSOP8) and SOT765-1 (VSSOP8)
6.2 Pin description
Table 3.
Symbol
1A, 2A
1B, 2B
GND
1Y, 2Y
V
CC
Pin description
Pin
1, 5
2, 6
4
7, 3
8
Description
data input
data input
ground (0 V)
data output
supply voltage
7. Functional description
Table 4.
Input
nA
L
L
H
H
[1]
Function table
[1]
Output
nB
L
H
L
H
nY
L
H
H
L
H = HIGH voltage level; L = LOW voltage level.
74HC_HCT2G86_Q100
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 10 March 2014
3 of 14
NXP Semiconductors
74HC2G86-Q100; 74HCT2G86-Q100
Dual 2-input EXCLUSIVE-OR gate
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
V
CC
I
IK
I
OK
I
O
I
CC
I
GND
T
stg
P
D
[1]
[2]
Parameter
supply voltage
input clamping current
output clamping current
output current
supply current
ground current
storage temperature
dynamic power dissipation
Conditions
V
I
<
0.5
V or V
I
> V
CC
+ 0.5 V
V
O
<
0.5
V or V
O
> V
CC
+ 0.5 V
V
O
=
0.5
V to (V
CC
+ 0.5 V)
[1]
[1]
[1]
[1]
[1]
Min
0.5
-
-
-
-
50
65
-
Max
+7.0
20
20
25
50
-
+150
300
Unit
V
mA
mA
mA
mA
mA
C
mW
T
amb
=
40 C
to +125
C
[2]
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
For TSSOP8 package: above 55
C
the value of P
tot
derates linearly with 2.5 mW/K.
For VSSOP8 package: above 110
C
the value of P
tot
derates linearly with 8 mW/K.
9. Recommended operating conditions
Table 6.
Recommended operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
CC
V
I
V
O
T
amb
t/V
supply voltage
input voltage
output voltage
ambient temperature
input transition rise
and fall rate
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
Conditions
74HC2G86-Q100
Min
2.0
0
0
40
-
-
-
Typ
5.0
-
-
+25
-
1.67
-
Max
6.0
V
CC
V
CC
+125
625
139
83
74HCT2G86-Q100
Min
4.5
0
0
40
-
-
-
Typ
5.0
-
-
+25
-
1.67
-
Max
5.5
V
CC
V
CC
+125
-
139
-
V
V
V
C
ns/V
ns/V
ns/V
Unit
10. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
74HC2G86-Q100
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
74HC_HCT2G86_Q100
Conditions
Min
1.5
3.15
4.2
-
-
-
25
C
Typ
1.2
2.4
3.2
0.8
2.1
2.8
Max
-
-
-
0.5
1.35
1.8
40 C
to +85
C 40 C
to +125
C
Unit
Min
1.5
3.15
4.2
-
-
-
Max
-
-
-
0.5
1.35
1.8
Min
1.5
3.15
4.2
-
-
-
Max
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 10 March 2014
4 of 14
NXP Semiconductors
74HC2G86-Q100; 74HCT2G86-Q100
Dual 2-input EXCLUSIVE-OR gate
Table 7.
Static characteristics
…continued
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter
V
OH
Conditions
Min
HIGH-level
V
I
= V
IH
or V
IL
output voltage
I
O
=
20 A;
V
CC
= 2.0 V
I
O
=
20 A;
V
CC
= 4.5 V
I
O
=
20 A;
V
CC
= 6.0 V
I
O
=
4.0
mA; V
CC
= 4.5 V
I
O
=
5.2
mA; V
CC
= 6.0 V
V
OL
LOW-level
V
I
= V
IH
or V
IL
output voltage
I
O
= 20
A;
V
CC
= 2.0 V
I
O
= 20
A;
V
CC
= 4.5 V
I
O
= 20
A;
V
CC
= 6.0 V
I
O
= 4.0 mA; V
CC
= 4.5 V
I
O
= 5.2 mA; V
CC
= 6.0 V
I
I
I
CC
C
I
input leakage
current
V
I
= V
CC
or GND;
V
CC
= 6.0 V
1.9
4.4
5.9
4.18
5.68
-
-
-
-
-
-
-
-
25
C
Typ
2.0
4.5
6.0
4.32
5.81
0
0
0
0.15
0.16
-
-
1.5
Max
-
-
-
-
-
0.1
0.1
0.1
0.26
0.26
0.1
1.0
-
40 C
to +85
C 40 C
to +125
C
Unit
Min
1.9
4.4
5.9
4.13
5.63
-
-
-
-
-
-
-
-
Max
-
-
-
-
-
0.1
0.1
0.1
0.33
0.33
1.0
10
-
Min
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
-
-
-
Max
-
-
-
-
-
0.1
0.1
0.1
0.4
0.4
1.0
20
-
V
V
V
V
V
V
V
V
V
V
A
A
pF
supply current V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
input
capacitance
HIGH-level
input voltage
LOW-level
input voltage
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
74HCT2G86-Q100
V
IH
V
IL
V
OH
2.0
-
1.6
1.2
-
0.8
2.0
-
-
0.8
2.0
-
-
0.8
V
V
HIGH-level
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
output voltage
I
O
=
20 A
I
O
=
4.0
mA
LOW-level
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
output voltage
I
O
= 20
A
I
O
= 4.0 mA
input leakage
current
V
I
= V
CC
or GND;
V
CC
= 5.5 V
4.4
4.18
-
-
-
-
-
4.5
4.32
0
0.15
-
-
-
-
-
0.1
0.26
0.1
1.0
300
4.4
4.13
-
-
-
-
-
-
-
0.1
0.33
1.0
10
375
4.4
3.7
-
-
-
-
-
-
-
0.1
0.4
1.0
20
410
V
V
V
V
A
A
A
V
OL
I
I
I
CC
I
CC
supply current V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 5.5 V
additional
per input;
supply current V
CC
= 4.5 V to 5.5 V;
V
I
= V
CC
2.1 V; I
O
= 0 A
input
capacitance
C
I
-
1.5
-
-
-
-
-
pF
74HC_HCT2G86_Q100
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 1 — 10 March 2014
5 of 14
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
