MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD15HVF1
DRAWING
9.1+/-0.7
1.3+/-0.4
3.6+/-0.2
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
DESCRIPTION
RD15HVF1 is a MOS FET type transistor specifically
designed for VHF/UHF High power amplifiers applica
-tions.
OUTLINE
3.2+/-0.4
12.3MIN
High power and High Gain:
Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz
Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz
High Efficiency: 60%typ. on VHF Band
High Efficiency: 55%typ. on UHF Band
4.8MAX
9+/-0.4
FEATURES
12.3+/-0.6
2
1.2+/-0.4
0.8+0.10/-0.15
1 2 3
APPLICATION
3.1+/-0.6
5deg
4.5+/-0.5
For output stage of high power amplifiers in VHF/UHF
Band mobile radio sets.
0.5+0.10/-0.15
2.5 2.5
RoHS COMPLIANT
9.5MAX
note:
RD15HVF1-101 is a RoHS compliant products.
Torelance of no designation means typical value.
RoHS compliance is indicate by the letter “G” after the lot
Dimension in mm.
marking.
This product include the lead in high melting temperature type solders.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
PINS
1:GATE
2:SOURCE
3:DRAIN
RD15HVF1
MITSUBISHI ELECTRIC
1/9
7 Mar 2008
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD15HVF1
UNIT
V
V
W
W
A
°C
°C
°C/W
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
V
DSS
V
GSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input power
Drain current
Channel temperature
Storage temperature
Thermal resistance
CONDITIONS
Vgs=0V
Vds=0V
Tc=25
°C
Zg=Zl=50
Ω
-
-
-
junction to case
RATINGS
30
+/-20
48
1.5(Note2)
4
150
-40 to +150
2.6
Note 1: Above parameters are guaranteed independently.
Note 2: Over 300MHz use spec is 6W
ELECTRICAL CHARACTERISTICS
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
SYMBOL
I
DSS
I
GSS
V
TH
Pout1
ηD1
Pout2
ηD2
PARAMETER
Zero gate voltage drain current
Gate to source leak current
Gate threshold Voltage
Output power
Drain efficiency
Output power
Drain efficiency
Load VSWR tolerance
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=12V, I
DS
=1mA
V
DD
=12.5V, Pin=0.6W,
f=175MHz,Idq=0.5A
V
DD
=12.5V, Pin=3W,
f=520MHz,Idq=0.5A
V
DD
=15.2V,Po=15W(PinControl)
f=175MHz,Idq=0.5A,Zg=50
Ω
Load VSWR=20:1(All Phase)
V
DD
=15.2V,Po=15W(PinControl)
f=520MHz,Idq=0.5A,Zg=50
Ω
Load VSWR=20:1(All Phase)
LIMITS
MIN
TYP MAX.
-
-
100
-
-
1
1.5
2.0
2.5
15
18
-
55
60
-
15
18
-
50
55
-
No destroy
UNIT
uA
uA
V
W
%
W
%
-
Load VSWR tolerance
No destroy
-
Note : Above parameters , ratings , limits and conditions are subject to change.
RD15HVF1
MITSUBISHI ELECTRIC
2/9
7 Mar 2008
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD15HVF1
Vgs-Ids CHARACTERISTICS
10
8
6
4
2
0
Ta=+25°C
Vds=10V
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
TYPICAL CHARACTERISTICS
CHANNNEL DISSIPATION VS.
AMBIENT TEMPERATURE
100
CHANNEL DISSIPATION
Pch(W)
80
40
20
0
0
40
80
120 160 200
AMBIENT TEMPERATURE Ta(°C)
Ids(A)
60
0
2
4
6
Vgs(V)
8
10
Vds-Ids CHARACTERISTICS
10
Ta=+25°C
Vds VS. Ciss CHARACTERISTICS
80
Vgs=10V
Vgs=9V
Vgs=8V
Vgs=7V
Vgs=6V
Vgs=5V
Ta=+25°C
f=1MHz
8
6
4
2
0
0
2
4
6
Vds(V)
8
10
60
Ciss(pF)
40
20
0
0
5
10
Vds(V)
15
20
Ids(A)
Vgs=4V
Vgs=3V
Vds VS. Coss CHARACTERISTICS
100
80
Coss(pF)
60
40
20
0
0
5
10
Vds(V)
15
20
Ta=+25°C
f=1MHz
Vds VS. Crss CHARACTERISTICS
10
8
Crss(pF)
6
4
2
0
0
5
10
Vds(V)
15
20
Ta=+25°C
f=1MHz
RD15HVF1
MITSUBISHI ELECTRIC
3/9
7 Mar 2008
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD15HVF1
Pin-Po CHARACTERISTICS
25
Po
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
50
40
30
Gp
Ta=+25°C
f=175MHz
Vdd=12.5V
Idq=0.5A
100
Po
100
80
ηd
Po(dBm) , Gp(dB) , Idd(A)
80
Pout(W) , Idd(A)
60
40
20
Ｉ½½
20
15
10
5
0
0.0
Ta=25°C
f=175MHz
Vdd=12.5V
Idq=0.5A
Idd
ηd(%)
20
10
0
0
10
20
Pin(dBm)
30
40
20
0
0
0.5
Pin(W)
1.0
1.5
Pin-Po CHARACTERISTICS
50
40
30
20
Gp
Ta=+25°C
f=520MHz
Vdd=12.5V
Idq=0.5A
Pin-Po CHARACTERISTICS
100
25
20
ηd
100
80
60
Po
Ta=25°C
f=520MHz
Vdd=12.5V
Idq=0.5A
Po
Po(dBm) , Gp(dB) , Idd(A)
80
60
40
20
Ｉ½½
Pout(W) , Idd(A)
ηd(%)
η
½
10
5
0
0
1
2
3
Pin(W)
4
40
20
0
10
0
0
10
20
Pin(dBm)
30
40
Idd
0
5
6
Vdd-Po CHARACTERISTICS
25
20
15
Idd
Ta=25°C
f=175MHz
Pin=0.6W
Idq=0.5A
Zg=ZI=50 ohm
Po
Vdd-Po CHARACTERISTICS
5
4
3
2
1
0
25
20
15
Idd
Ta=25°C
f=520MHz
Pin=3W
Idq=0.5A
Zg=ZI=50 ohm
5
4
3
2
1
0
4
6
8
10
Vdd(V)
12
14
Po
Idd(A)
Po(W)
10
5
0
4
6
8
10
Vdd(V)
12
14
Po(W)
10
5
0
RD15HVF1
MITSUBISHI ELECTRIC
4/9
7 Mar 2008
Idd(A)
ηd(%)
15
ηd(%)
η
½
60
MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
TYPICAL CHARACTERISTICS
Vgs-Ids CHARACTERISTICS 2
10
8
6
+75°C
Vds=10V
Tc=-25~+75°C
-25°C
+25°C
Ids(A)
4
2
0
0
2
4
6
Vgs(V)
8
10
TEST CIRCUIT(f=175MHz)
Vgg
C1
Vdd
9.1kOHM
L3
C3
8.2kOHM
100OHM
C2
L1
175MHz
RD15HVF1
L2
RF-IN
56pF
56pF
RF-OUT
82pF
25pF
25pF
25pF 25pF 25pF
22
45
62
73
92
100
7
10pF 25pF 25pF
7
12
40
42
74
95
100
Note:Board material-Teflon substrate
micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm
Dimensions:mm
C1:2200pF 10uF in parallel
C2:2200pF*2 in parallel
C3:2200pF,330uF in parallel
L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire
RD15HVF1
MITSUBISHI ELECTRIC
5/9
7 Mar 2008
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