Ordering number : ENA1573
RD0306T
SANYO Semiconductors
DATA SHEET
RD0306T
Features
•
•
•
•
•
Diffused Junction Silicon Diode
Low VF
•
High-Speed Switching Diode
High breakdown voltage (VRRM=600V).
Fast reverse recovery time.
Low noise at the time of reverse recovery.
Low forward voltage (VF max=1.5V).
Halogen free compliance.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
Conditions
Ratings
600
3
Sine wave 10ms, 1 cycle
40
150
-
-55 to +150
Unit
V
A
A
°C
°C
I
O
I
FSM
Tj
Tstg
Electrical Characteristics
at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Thermal Resistance
Symbol
VR
VF
IR
trr1
trr2
Rth(j-c)
IR=1mA
IF=3A
VR=600V
IF=3A, di / dt=100A/μs
IF=0.5A, IR=1A
Junction -Case
Conditions
Ratings
min
600
1.2
40
16
6
1.5
10
50
typ
max
Unit
V
V
μA
ns
ns
°C / W
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the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
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O2809SC TK IM TC-00002159 No. A1573-1/3
RD0306T
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
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This catalog provides information as of October, 2009. Specifications and information herein are subject
to change without notice.
PS No. A1573-3/3
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